J309 ONSEMI | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 5

Technical content

Features

  • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage VDS 25 Vdc Gate−Source Voltage VGS 25 Vdc Forward Gate Current IGF 10 mAdc Total Device Dissipation @ TA = 25°C Derate above = 25°C PD 350 2.8 mW mW/°C Junction Temperature Range TJ −65 to +125 °C Storage Temperature Range Tstg −65 to +150 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. MARKING DIAGRAM http://onsemi.com TO−92 CASE 29−11 STYLE 51 2 3 J3xx AYWW /C0071 /C0071

1 DRAIN

2 SOURCE

See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet.

ORDERING INFORMATION

J3xx = Device Code xx = 09 or 10 A = Assembly Location Y = Year WW = Work Week /C0071 = Pb−Free Package (Note: Microdot may be in either location) Preferred devices are recommended choices for future use and best overall value.

J309, J310 http://onsemi.com ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Gate−Source Breakdown Voltage (IG = −1.0 /C0109Adc, VDS = 0) V(BR)GSS −25 − − Vdc Gate Reverse Current (VGS = −15 Vdc, VDS = 0, TA = 25°C) (VGS = −15 Vdc, VDS = 0, TA = +125°C) IGSS −1.0 −1.0 nAdc /C0109Adc Gate Source Cutoff Voltage (VDS = 10 Vdc, ID = 1.0 nAdc) J309 J310 VGS(off) −1.0 −2.0 −4.0 −6.5 Vdc ON CHARACTERISTICS Zero−Gate−Voltage Drain Current (1) (VDS = 10 Vdc, VGS = 0) J309 J310 IDSS mAdc Gate−Source Forward Voltage (VDS = 0, IG = 1.0 mAdc) VGS(f) − − 1.0 Vdc SMALL−SIGNAL CHARACTERISTICS Common−Source Input Conductance (VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz) J309 J310 Re(yis) 0.7 0.5 mmhos Common−Source Output Conductance (VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz) Re(yos) − 0.25 − mmhos Common−Gate Power Gain (VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz) Gpg − 16 − dB Common−Source Forward Transconductance (VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz) Re(yfs) − 12 − mmhos Common−Gate Input Conductance (VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz) Re(yig) − 12 − mmhos Common−Source Forward Transconductance (VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz) J309 J310 gfs 10000 8000 20000 18000 /C0109mhos Common−Source Output Conductance (VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz) gos − − 250 /C0109mhos Common−Gate Forward Transconductance (VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz) J309 J310 gfg 13000 12000 /C0109mhos Common−Gate Output Conductance (VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz) J309 J310 gog 100 150 /C0109mhos Gate−Drain Capacitance (VDS = 0, VGS = −10 Vdc, f = 1.0 MHz) Cgd − 1.8 2.5 pF Gate−Source Capacitance (VDS = 0, VGS = −10 Vdc, f = 1.0 MHz) Cgs − 4.3 5.0 pF FUNCTIONAL CHARACTERISTICS Equivalent Short−Circuit Input Noise Voltage (VDS = 10 Vdc, ID = 10 mAdc, f = 100 Hz) en − 10 − nV/C0324Hz/C0504 1. Pulse Test: Pulse Width /C0118 300 /C0109s, Duty Cycle /C0118 3.0%.

J309, J310 http://onsemi.com Device Package Shipping† J309 TO−92

1000 Units / BulkJ309G TO−92

(Pb−Free) J310 TO−92

1000 Units / BulkJ310G TO−92

(Pb−Free) J310RLRP TO−92

2000 Units / Tape & Ammo BoxJ310RLRPG TO−92

(Pb−Free) J310ZL1 TO−92

2000 Units / Tape & Ammo BoxJ310ZL1G TO−92

(Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. , SATURATION DRAIN CURRENT (mA) ID − VGS, GATE−SOURCE VOLTAGE (VOLTS) IDSS , DRAIN CURRENT (mA)ID IDSS − VGS, GATE−SOURCE CUTOFF VOLTAGE (VOLTS) Figure 1. Drain Current and Transfer Figure 2. Forward Transconductance

J309, J310 http://onsemi.com PACKAGE DIMENSIONS TO−92 (TO−226) CASE 29−11 ISSUE AL NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. R A P J L B K G H SECTION X−X CV D N N XX SEATING PLANE DIM MIN MAX MIN MAX MILLIMETERSINCHES A 0.175 0.205 4.45 5.20 B 0.170 0.210 4.32 5.33 C 0.125 0.165 3.18 4.19 D 0.016 0.021 0.407 0.533 G 0.045 0.055 1.15 1.39 H 0.095 0.105 2.42 2.66 J 0.015 0.020 0.39 0.50 N 0.080 0.105 2.04 2.66 STYLE 5: PIN 1. DRAIN 2. SOURCE 3. GATE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION N. American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 J309/D LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative.