J310D74Z FAIRCHILD | Alldatasheet

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Technical content

Features

  • This device is designed for VHF/UHF amplifier, oscillator and mixer applications.
  • As a common gate amplifier, 16 dB at 100 MHz and 12 dB at 450 MHz can be realized.
  • Sourced from Process 92.
  • Source & Drain are interchangeable. Absolute Maximum Ratings * Ta = 25°C unless otherwise noted * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Ta = 25°C unless otherwise noted * Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06". Symbol Parameter Value Units VDS Drain-Source Voltage 25 V VGS Gate-Source Voltage -25 V IGF Forward Gate Current 10 mA TJ, Tstg Operating and Storage Junction Temperature Range - 55 to +150 °C Symbol Parameter Max. Units J309-J310 *MMBFJ309-310 PD Total Device Dissipation Derate above 25°C 625 5.0 350 2.8 mW mW/°C RθJC Thermal Resistance, Junction to Case 127 °C/W RθJA Thermal Resistance, Junction to Ambient 357 556 °C/W J309 MMBFJ309 SOT-23 Mark MMBFJ309 : 6U G D S J310 MMBFJ310 MMBFJ310 : 6T GS D TO-92

J309 / J310 / MMBFJ309 / MMBFJ310 — N-Channel RF Amplifier © 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com J309 / J310 / MMBFJ309 / MMBFJ310 Rev. A1 2 Electrical Characteristics Ta = 25°C unless otherwise noted * Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0% Symbol Parameter Test Condition Min. Typ. Max. Units Off Characteristics BV(BR)GSS Gate-Source Breakdown Voltage I G = -1.0μA, VDS = 0 -25 V IGSS Gate Reverse Current V GS = -15V, VDS = 0 VGS = -15V, VDS = 0, Ta = 125°C -1.0 -1.0 nA μA VGS(off) Gate-Source Cutoff Voltage V DS = 10V, ID = 1.0nA 309 310 -1.0 -2.0 -4.0 -6.5 V V On Characteristics IDSS Zero-Gate Voltage Drain Current* VDS = 10V, VGS = 0 309 310 mA mA VGS(f) Gate-Source Forward Voltage V DS = 0, IG = 1.0mA 1.0 V Small Signal Characteristics Re(yis) Common-Source Input Conductance VDS = 10V, ID = 10mA, f = 100MHz 309 310 0.7 0.5 mmhos mmhos Re(yos) Common-Source Output Conductance VDS = 10V, ID = 10mA, f = 100MHz 0.25 mmhos Gpg Common-Gate Power Gain V DS = 10V, ID = 10mA, f = 100MHz 16 dB Re(yfs) Common-Source Forward Transconductance VDS = 10V, ID = 10mA, f = 100MHz 12 mmhos Re(yig) Common-Gate Input Conductance VDS = 10V, ID = 10mA, f = 100MHz 12 mmhos gfs Common-Source Forward Transconductance VDS = 10V, ID = 10mA, f = 1.0kHz 309 310 10,000 8,000 20,000 18,000 μmhos μmhos goss Common-Source Output Conductance VDS = 10V, ID = 10mA, f = 1.0kHz 150 μmhos gfg Common-Gate Forward Conductance VDS = 10V, ID = 10mA, f = 1.0kHz 309 310 13,000 12,000 μmhos μmhos gog Common-Gate Output Conductance VDS = 10V, ID = 10mA, f = 1.0kHz 309 310 100 150 μmhos μmhos Cdg Drain-Gate Capacitance V DS = 0, VGS = -10V, f = 1.0MHz 2.0 2.5 pF Csg Source-Gate Capacitance V DS = 0, VGS = -10V, f = 1.0MHz 4.1 5.0 pF NF Noise Figure V DS = 10V, ID = 10mA, f = 450MHz 3.0 dB en Equivalent Short-Circuit Input Noise Voltage VDS = 10V, ID = 10mA, f = 100Hz 6.0 nV/ Hz

J309 / J310 / MMBFJ309 / MMBFJ310 — N-Channel RF Amplifier © 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com J309 / J310 / MMBFJ309 / MMBFJ310 Rev. A1 3 Typical Performance Characteristics Transfer Characteristics Transfer Characteristics Transfer Characteristics Forward Transadmittance Transfer Characteristics Input Admittance

J309 / J310 / MMBFJ309 / MMBFJ310 — N-Channel RF Amplifier © 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com J309 / J310 / MMBFJ309 / MMBFJ310 Rev. A1 4 Typical Performance Characteristics (continued) Capacitance vs. VoltageOutput Admittance Output Conductance vs. Drain CurrentCommon Drain-Source Noise Voltage vs. Frequency Reverse Transadmittance

J309 / J310 / MMBFJ309 / MMBFJ310 — N-Channel RF Amplifier © 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com J309 / J310 / MMBFJ309 / MMBFJ310 Rev. A1 5 Typical Performance Characteristics (continued) Transconductance vs. Drain CurrentParameter Interactions Leakage Current vs. Voltage Power Dissipation vs Ambient Temperature 0 25 50 75 100 125 150 100 200 300 400 500 600 700 TEMPERATURE ( C) P - POWER DISSIPATION (mW) D o TO-92 SOT-23

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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I50