J309_D26Z

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MMBFJ309 / MMBFJ310 — N-Channel RF Amplifier © 1997 Fairchild Semiconductor Corporation www.fairchildsemi.com MMBFJ309 / MMBFJ310 Rev. 1.5 January 2015 MMBFJ309 / MMBFJ310 N-Channel RF Amplifier

Ordering Information

Absolute Maximum Ratings(1), (2) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at T A = 25°C unless otherwise noted. Notes: 1. These ratings are based on a maximum junction temperature of 150°C. 2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or low-duty-cycle operations. Thermal Characteristics(3) Values are at TA = 25°C unless otherwise noted. Note: 3. Device mounted on FR-4 PCB 36mm × 18mm × 1.5mm; mounting pad for the collector lead minimum 6cm2. Part Number Top Mark Package Packing Method MMBFJ309 6U SOT-23 3L Tape and Reel MMBFJ310 6T SOT-23 3L Tape and Reel Symbol Parameter Value Unit VDG Drain-Gate Voltage 25 V VGS Gate-Source Voltage -25 V IGF Forward Gate Current 10 mA TJ, TSTG Operating and Storage Junction Temperature Range -55 to 150 °C Symbol Parameter Max. Unit PD Total Device Dissipation 350 mW Derate Above 25°C2 . 8 m W / °C RθJA Thermal Resistance, Junction-to-Ambient 357 °C/W

Description

This device is designed for VHF/UHF amplifier, oscil- lator and mixer applications. As a common gate amplifier, 16 dB at 100 MHz and 12 dB at 450 MHz can be realized. Sourced from process 92. Source & Drain are interchangeable. SOT-23 G D S Note: Source & Drain are interchangeable

MMBFJ309 / MMBFJ310 — N-Channel RF Amplifier © 1997 Fairchild Semiconductor Corporation www.fairchildsemi.com MMBFJ309 / MMBFJ310 Rev. 1.5 2

Electrical Characteristics

Values are at TA = 25°C unless otherwise noted. Note: 4. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0% Symbol Parameter Conditions Min. Typ. Max. Unit Off Characteristics V(BR)GSS Gate-Source Breakdown Voltage I G = -1.0 μA, VDS = 0 -25 V IGSS Gate Reverse Current VGS = -15 V, VDS = 0 -1.0 nA VGS = -15 V, VDS = 0, TA = 125°C -1.0 μA VGS(off) Gate-Source Cut-Off Voltage V DS = 10 V, ID = 1.0 nA MMBFJ309 -1.0 -4.0 V MMBFJ310 -2.0 -6.5 On Characteristics IDSS Zero-Gate Voltage Drain Current(4) VDS = 10 V, VGS = 0 MMBFJ309 12 30 mA MMBFJ310 24 60 VGS(f) Gate-Source Forward Voltage V DS = 0, IG = 1.0 mA 1.0 V Small Signal Characteristics Re(yis) Common-Source Input Conductance VDS = 10 V, ID = 10 mA, f = 100 MHz MMBFJ309 0.7 mmhos MMBFJ310 0.5 Re(yos) Common-Source Output Conductance VDS = 10 V, ID = 10 mA, f = 100 MHz 0.25 mmhos Gpg Common-Gate Power Gain V DS = 10 V, ID = 10 mA, f = 100 MHz 16 dB Re(yfs) Common-Source Forward Transconductance VDS = 10 V, ID = 10 mA, f = 100 MHz 12 mmhos Re(yig) Common-Gate Input Conductance VDS = 10 V, ID = 10 mA, f = 100 MHz 12 mmhos gfs Common-Source Forward Transconductance VDS = 10 V, ID = 10 mA, f = 1.0 kHz MMBFJ309 10000 20000 μmhos MMBFJ310 8000 18000 goss Common-Source Output Conductance VDS = 10 V, ID = 10 mA, f = 1.0 kHz 150 μmhos gfg Common-Gate Forward Conductance VDS = 10 V, ID = 10 mA, f = 1.0 kHz MMBFJ309 13000 μmhos MMBFJ310 12000 gog Common-Gate Output Conductance VDS = 10 V, ID = 10 mA, f = 1.0 kHz MMBFJ309 100 μmhos MMBFJ310 150 Cdg Drain-Gate Capacitance V DS = 0, VGS = -10 V, f = 1.0 MHz 2.0 2.5 pF Csg Source-Gate Capacitance V DS = 0, VGS = -10 V, f = 1.0 MHz 4.1 5.0 pF NF Noise Figure V DS = 10 V, ID = 10 mA, f = 450 MHz 3.0 dB en Equivalent Short-Circuit Input Noise Voltage VDS = 10 V, ID = 10 mA, f = 100 Hz 6.0 nV/ Hz

Figure 17. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE TO-236, VARIATION AB, ISSUE H. B) ALL DIMENSIONS ARE IN MILLIMETERS. MOLD FLASH AND TIE BAR EXTRUSIONS.

1.20 MAX

0.20 A B

0.20 MIN

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