JANS2ST3360K STMICROELECTRONICS | Alldatasheet

Document overview

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  • PDF pages: 12

Technical content

Datasheet sections

  • 1 Electrical ratings
  • 2 Electrical characteristics
  • 2.1 Test circuits
  • 3 Radiation hardness assurance
  • 4 Package information
  • 4.1 Flat-8 package information
  • 5 Ordering information
  • 6 Other information
  • 6.1 Traceability information
  • 6.2 Documentation

Features

Vceo IC(max.) HFE at 10 V, 150 mA Tj(max.) 60 V 0.8 A > 100 200 °C

  • Hermetic package
  • Qualified as per MIL-PRF-M19500/773
  • 100 krad

Description

The JANS2ST3360K is dual complementary (NPN and PNP) bipolar transistor in a single Flat-8 hermetic package. Qualified as per MIL-PRF-M19500/773 it is available in JANS and JANSR screening options. Able to operate under critical environment and radiation exposure, it provides high reliability performance and immunity to the total ionizing dose (TID) at high and low dose rate conditions. Specifically recommended for space and harsh environment applications it is suitable for low current and high precision circuits such preamplifiers, oscillators, current mirror configuration and high peak current required in power MOSFET driver circuits. In case of discrepancies between this datasheet and the relevant agency specification, the latter takes precedence. Product summary Product summary Part-number Screening options Agency specification Package Radiation level J2ST3360K1 Engineering model - Flat-8 JANS2ST3360Kx JANS MIL-PRF-M19500/773 JANSR2ST3360Kx JANSR 100 krad Note: See Table 8 for ordering information. Rad-Hard 60 V, 0.8 A NPN and PNP complementary transistors JANS2ST3360K Datasheet DS11305 - Rev 3 - February 2022 For further information contact your local STMicroelectronics sales office.

1 Electrical ratings

Table 1. Absolute maximum ratings Table 2. Thermal data RthJA Thermal resistance junction-to-ambient max. RthJC Thermal resistance junction-to-case max.

2 Electrical characteristics

Note: For PNP transistor voltage and current polarity is reversed. Table 3. Electrical characteristics for NPN (Tamb = 25 °C unless otherwise specified)

  1. Pulse test: pulse duration ≤ 300 μs, duty cycle ≤ 2%.

Electrical characteristics

Table 4. Electrical characteristics for PNP (Tamb = 25 °C unless otherwise specified)

  1. Pulse test: pulse duration ≤ 300 μs, duty cycle ≤ 2%.

2.1 Test circuits

Figure 1. Resistive load switching for NPN Figure 2. Resistive load switching for PNP

3 Radiation hardness assurance

Table 5. MIL-PRF-19500 post radiation electrical characteristics for NPN

  1. Pulsed duration = 300 μs, duty cycle ≥ 2 %
  2. See method 1019 of MIL-STD-750 about how to determine [h FE] by first calculating the delta (1/hFE) from the pre- and

exceed the pre-radiation minimum hFE, which is based upon. Table 6. MIL-PRF-19500 post radiation electrical characteristics for PNP

  1. Pulsed duration = 300 μs, duty cycle ≥ 2 %
  2. For PNP type, voltage and current values are negative.
  3. See method 1019 of MIL-STD-750 about how to determine [h FE] by first calculating the delta (1/hFE) from the pre- and

exceed the pre-radiation minimum hFE, which is based upon.

4 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.

4.1 Flat-8 package information

Figure 3. Flat-8 package outline Table 7. Flat-8 mechanical data

Package information

5 Ordering information

Table 8. Ordering information

  1. Specific marking only. The full marking includes in addition: For the engineering models: ST logo, date code; country of origin (FR). For JANS and JANSR: ST

logo, date code, country of origin (FR), ESA logo, serial number of the part within the assembly lot.

Ordering information

6 Other information

6.1 Traceability information

Table 9. Date codes

  1. yy = year, ww = week number, N = lot index in the week.
  2. P = country of the wafer fab.

6.2 Documentation

Table 10. Documentation provided for each type of product Engineering model Certificate of conformance. JANS Certificate of conformance.

Revision history

Table 11. Document revision history 30-Sep-2015 1 Initial release. information and Figure 4: Flat-8 package outline. 09-Feb-2022 3 Updated Description, Features, Product summary, Section 3 , Table 8, Table 9 and Table 10.