J210 FAIRCHILD | Alldatasheet

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G D S J210 J211 J212 N-Channel RF Amplifier This device is designed for HF/VHF mixer/amplifier and applications where Process 50 is not adequate. Sufficient gain and low noise for sensitive receivers. Sourced from Process 90. MMBFJ210 MMBFJ211 MMBFJ212 Absolute Maximum Ratings* TA = 25°C unless otherwise noted *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Thermal Characteristics TA = 25°C unless otherwise noted NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Symbol Parameter Value Units VDG Drain-Gate Voltage 25 V VGS Gate-Source Voltage - 25 V IGF Forward Gate Current 10 mA TJ ,Tstg Operating and Storage Junction Temperature Range -55 to +150 °C Symbol Characteristic Max Units J210-212 *MMBFJ210-212 PD Total Device Dissipation Derate above 25°C 350 2.8 225 1.8 mW mW/°C RθJC Thermal Resistance, Junction to Case 125 °C/W RθJA Thermal Resistance, Junction to Ambient 357 556 °C/W SOT-23 Mark: 62V / 62W / 62X G S D TO-92 *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."  1997 Fairchild Semiconductor Corporation NOTE: Source & Drain are interchangeable J210 / J21 1 / J212 / MMBFJ210 / MMBFJ21 1 / MMBFJ212 J210/J211/J212/MMBFJ210/J211/J212, Rev A

Electrical Characteristics TA = 25°C unless otherwise noted OFF CHARACTERISTICS Symbol Parameter Test Conditions Min Max Units ON CHARACTERISTICS SMALL SIGNAL CHARACTERISTICS IDSS Zero-Gate Voltage Drain Current* V DS = 15 V, V GS = 0 210 211 212 2.0 7.0 mA mA mA Typical Characteristics Parameter Interactions Common Drain-Source V(BR)GSS Gate-Source Breakdown Voltage IG = 1.0 µA, V DS = 0 - 25 V IGSS Gate Reverse Current VGS = 15 V, V DS = 0 - 100 pA VGS(off) Gate-Source Cutoff Voltage VDS = 15 V, I D = 1.0 nA 210 211 212 -1.0 - 2.5 - 4.0 -3.0 - 4.5 - 6.0 V V V gfs Common Source Forward Transconductance VDS = 15 V, V GS = 0, f = 1.0 kHz 210 211 212 4000 6000 7000 12,000 12,000 12,000 µmhos µmhos µmhos goss Common Source Output Conductance VDS = 15 V, V GS = 0, f = 1.0 kHz 200 µmhos *Pulse Test: Pulse Width ≤ 300 µS N-Channel RF Amplifier (continued) J210 / J211 / J212 / MMBFJ210 / MMBFJ211 / MMBFJ212

Typical Characteristics (continued) Output Conductance vs. Drain Current Leakage Current vs. Voltage Noise Voltage vs. Frequency Transfer Characteristics Transconductance vs. Drain Current N-Channel RF Amplifier (continued) J210 / J211 / J212 / MMBFJ210 / MMBFJ211 / MMBFJ212

Typical Characteristics (continued) Common Source Characteristics Input Admittance Output Admittance Reverse Transadmittance Capacitance vs. Voltage os) Forward Transadmittance N-Channel RF Amplifier (continued) J210 / J211 / J212 / MMBFJ210 / MMBFJ211 / MMBFJ212

Common Gate Characteristics Input Admittance Forward Transadmittance Output Admittance Reverse Transadmittance N-Channel RF Amplifier (continued) J210 / J211 / J212 / MMBFJ210 / MMBFJ211 / MMBFJ212

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Preliminary No Identification Needed Obsolete This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Formative or In Design First Production Full Production Not In Production DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY , FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. OPTOPLANAR™ PACMAN™ POP™ PowerTrench QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER SMART START™ Stealth™ FAST FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MICROWIRE™ OPTOLOGIC™ Rev. H2 ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E 2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ UltraFET VCX™