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J211 / MMBFJ211 — N-Channel RF Amplifier Publication Order Number: J211-D74Z/D © 1997 Semiconductor Components Industries, LLC. September-2017, Rev. 2 J211 / MMBFJ211 N-Channel RF Amplifier
Ordering Information
Figure 1. J211 Device Package Figure 2. MMBFJ211 Device Package
Description
This device is designed for HF/VHF mixer/amplifier and applications where process 50 is not adequate. Sufficient gain and low-noise for sensitive receivers. Sourced from process 90.
J211 / MMBFJ211 — N-Channel RF Amplifier www.onsemi.com Absolute Maximum Ratings(1), (2) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Notes: 1.These ratings are based on a maximum junction temperature of 150°C. 2.These are steady-state limits. ON Semiconductor should be consulted on applications involving pulsed or low- duty-cycle operations. Thermal Characteristics Values are at TA = 25°C unless otherwise noted. Note: 3. Device mounted on FR-4 PCB 36mm × 18mm × 1.5mm; mounting pad for the collector lead minimum 6cm2.
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted. Note: 4. Pulse test: pulse width ≤ 300 μs Symbol Parameter Value Unit VDG Drain-Gate Voltage 25 V VGS Gate-Source Voltage -25 V IGF Forward Gate Current 10 mA TJ, TSTG Operating and Storage Junction Temperature Range -55 to 150 °C Symbol Parameter Max. Unit J211(3) MMBFJ211(3) PD Total Device Dissipation 350 225 mW Derate Above 25°C 2.8 1.8 mW/ °C RθJC Thermal Resistance, Junction-to-Case 125 °C/W RθJA Thermal Resistance, Junction-to-Ambient 357 556 °C/W Symbol Parameter Conditions Min. Max. Unit Off Characteristics V(BR)GSS Gate-Source Breakdown Voltage I G = 1.0 μA, VDS = 0 -25 V IGSS Gate Reverse Current VGS = 15 V, VDS = 0 -100 pA VGS(off) Gate-Source Cut-Off Voltage V DS = 15 V, ID = 1.0 nA -2.5 -4.5 V On Characteristics IDSS Zero-Gate Voltage Drain Current(4) VDS = 15 V, VGS = 0 7.0 20 mA Small Signal Characteristics gfs Common Source Forward Transconductance VDS = 15 V, VGS = 0, f = 1.0 kHz 7000 12000 μmhos goss Common Source Output Conductance V DS = 15 V, VGS = 0, f = 1.0 kHz 200 μmhos
Figure 20. 3-Lead, TO-92, Molded, 0.2 In Line Spacing Lead Form
Figure 21. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE TO-236, VARIATION AB, ISSUE H. B) ALL DIMENSIONS ARE IN MILLIMETERS. MOLD FLASH AND TIE BAR EXTRUSIONS.
1.20 MAX
0.20 A B
0.20 MIN
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