J174 PHILIPS
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Technical content
Product specification File under Discrete Semiconductors, SC07 April 1995 DISCRETE SEMICONDUCTORS J174; J175; J176; J177 P-channel silicon field-effect transistors
Philips Semiconductors Product specification P-channel silicon field-effect transistors J174; J175; J176; J177
DESCRIPTION
Silicon symmetrical p-channel junction FETs in a plastic TO-92 envelope and intended for application with analog switches, choppers, commutators etc. A special feature is the interchangeability of the drain and source connections. PINNING Note: Drain and source are interchangeable. 1 = source 2 = gate 3 = drain Fig.1 Simplified outline and symbol, TO-92. handbook, halfpage1 MAM388 s dg QUICK REFERENCE DATA Drain-source voltage ± VDS max. 30 V Gate-source voltage V GSO max. 30 V Gate current −IG max. 50 mA Total power dissipation up to Tamb =5 0°CP tot max. 400 mW J174 J175 J176 J177 Drain current min. max. 135 1.5 mA mA−VDS = 15 V; VGS =0 −IDSS Drain-source ON-resistance −VDS = 0.1 V; VGS =0 R DS on max. 85 125 250 300 Ω
Philips Semiconductors Product specification P-channel silicon field-effect transistors J174; J175; J176; J177 RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) THERMAL RESISTANCE STATIC CHARACTERISTICS Drain-source voltage ± VDS max. 30 V Gate-source voltage V GSO max. 30 V Gate-drain voltage V GDO max. 30 V Gate current (DC) −IG max. 50 mA Total power dissipation up to Tamb =5 0°CP tot max. 400 mW Storage temperature range T stg −65 to+150 °C Junction temperature T j max. 150 °C From junction to ambient in free air R th j-a = 250 K/W Tj=2 5°C unless otherwise specified J174 J175 J176 J177 Gate cut-off current VGS = 20 V; VDS =0 I GSS max. 1 1 1 1 nA Drain cut-off current −VDS = 15 V; VGS = 10 V −IDSX max. 1 1 1 1 nA Drain current −VDS = 15 V; VGS = 10 V −IDSS min. 20 7 2 1.5 mA max. 135 70 35 20 mA Gate-source breakdown voltage IG =1 µA; VDS =0 V (BR)GSS min. 30 30 30 30 V Gate-source cut-off voltage −ID = 10 nA; VDS = −15 V V GS off min. 5 3 1 0.8 V max. 10 6 4 2.25 V Drain-source ON-resistance −VDS = 0.1 V; VGS =0 R DSon max. 85 125 250 300 Ω
Philips Semiconductors Product specification P-channel silicon field-effect transistors J174; J175; J176; J177 DYNAMIC CHARACTERISTICS Tj=2 5°C unless otherwise specified Input capacitance, f = 1 MHz VGS = 10 V; VDS =0V C is typ. 8 pF VGS =V DS =0 C is typ. 30 pF Feedback capacitance, f = 1 MHz VGS = 10 V; VDS =0V C rs typ. 4 pF Switching times (see Fig.2+ 3) J174 J175 J176 J177 Delay time t d typ. 2 5 15 20 ns Rise time t r typ. 5 10 20 25 ns Turn-on time t on typ. 7 15 35 45 ns Storage time t s typ. 5 10 15 20 ns Fall time t f typ. 10 20 20 25 ns Turn-off time toff typ. 15 30 35 45 ns Test conditions: −VDD 10 6 6 6 V VGS off 12 8 6 3 V R L 560 1200 2000 2900 Ω VGS on 00 0 0 V Fig.2 Switching times test circuit. handbook, halfpage MBK292 R L 50 Ω D.U.T 50 Ω Vin Vout −VDD Fig.3 Input and output waveforms; td + tr =ton ;t s +tf=toff. MBK293 VGSoff INPUT OUTPUT ts tf 90% 10% 10% 90% 10% 90% td tr
Philips Semiconductors Product specification P-channel silicon field-effect transistors J174; J175; J176; J177 PACKAGE OUTLINE UNIT A REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ mm 5.2 5.0 b 0.48 0.40 c 0.45 0.40 D 4.8 4.4 d 1.7 1.4 E 4.2 3.6 L 14.5 12.7 e 2.54 1.27 L1(1) 2.5 0.66 0.56 DIMENSIONS (mm are the original dimensions) Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. SOT54 TO-92 SC-43 97-02-28 A L 0 2.5 5 mm scale b c D b1 L1 d E Plastic single-ended leaded (through hole) package; 3 leads SOT54 e
Philips Semiconductors Product specification P-channel silicon field-effect transistors J174; J175; J176; J177 DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Short-form specification The data in this specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.