J174 FAIRCHILD | Alldatasheet
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J174 / J175 / J176 / J177 / MMBFJ175 / MMBFJ176 / MMBFJ177 J174 J175 J176 J177 MMBFJ175 MMBFJ176 MMBFJ177 P-Channel Switch This device is designed for low level analog switching sample and hold circuits and chopper stabilized amplifiers. Sourced from Process 88. SOT-23 Mark: 6W / 6X / 6Y G S D GS D TO-92 Absolute Maximum Ratings* TA = 25°C unless otherwise noted *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES : 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units J174 - J177 *MMBFJ175 PD Total Device Dissipation Derate above 25°C 350 2.8 225 1.8 mW mW/ °C R θJC Thermal Resistance, Junction to Case 125 °C/W R θJA Thermal Resistance, Junction to Ambient 357 556 °C/W Symbol Parameter Value Units VDG Drain-Gate Voltage - 30 V VGS Gate-Source Voltage 30 V IGF Forward Gate Current 50 mA TJ ,Tstg Operating and Storage Junction Temperature Range -55 to +150 °C *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." 1997 Fairchild Semiconductor Corporation J174-177, Rev. A
J174 / J175 / J176 / J177 / MMBFJ175 / MMBFJ176 / MMBFJ177 P-Channel Switch (continued) Electrical Characteristics TA = 25°C unless otherwise noted OFF CHARACTERISTICS Symbol Parameter Test Conditions Min Max Units ON CHARACTERISTICS IDSS Zero-Gate Voltage Drain Current* VDS = - 15 V, IGS = 0 J174 J175 J176 J177 - 20 - 7.0 - 2.0 - 1.5 - 100 - 60 - 25 - 20 mA mA mA mA rDS(on) Drain-Source On Resistance VDS ≤ 0.1 V, VGS = 0 J174 J175 J176 J177 125 250 300 Ω Ω Ω Ω *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% B(BR )GSS Gate-Source Breakdown Voltage IG = 1.0 µA, VDS = 0 30 V IGSS Gate Reverse Current V GS = 20 V, VDS = 0 1.0 nA VGS (off) Gate-Source Cutoff Voltage V DS = - 15 V, ID = - 10 nA J174 J175 J176 J177 5.0 3.0 1.0 0.8 6.0 4.0 2.5 V V V V Typical Characteristics Common Drain-Source -5-4-3-2-10 -20 -16 -12 V - DRAIN-SOURCE VOLTAGE (V) I - DRAIN CURRENT (mA) DS D 1.0 V 2.5 V 2.0 V 0.5 V 1.5 V V = 0 VGS T = 25°C TYP V = 4.5 VGS(off) A 3.0 V 3.5 V r - DRAIN "ON" RESISTANCE (Ω) Parameter Interactions 12 5 1 0 100 100 500 1,000 V - GATE CUTOFF VOLTAGE (V) g - TRANSCONDUCTANCE (mmhos) GS (OFF) fs I , g @ V = 15V, V = 0 PULSED r @ -100 mV, V = 0 V @ V = - 15V, I = - 1.0 µA GS(off) DSS r D IDSS DS DS GS DS DS GS fs DS DS g fs
J174 / J175 / J176 / J177 / MMBFJ175 / MMBFJ176 / MMBFJ177 Typical Characteristics (continued) Transfer Characteristics 01234 -32 -24 -16 V - GATE-SOURCE VOLTAGE (V) I - DRAIN CURRENT (mA) GS D V = - 4.5 VGS(off) 25°C V = - 15 VDS V = 2.5 VGS(off) 125°C - 55°C 25°C 125°C - 55°C Transfer Characteristics 01234 V - GATE-SOURCE VOLTAGE (V) I - DRAIN CURRENT (mA) GS D V = - 4.5 VGS(off) 25°C V = - 15 VDS V = 2.5 VGS(off) 125°C - 55°C 25°C - 55°C 125°C Normalized Drain Resistance vs Bias Voltage 0 0.2 0.4 0.6 0.8 1 100 V /V - NORMALIZED GATE-SOURCE VOLTAGE (V) r - NORMALIZED RESISTANCE GS DS r = DS V @ 5.0V, 10 µAGS(off) r DS V GS(off) V GS1 - GS(off) Output Conductance vs Drain Current 0.01 0.1 1 10 100 1000 I - DRAIN CURRENT (mA) g - OUTPUT CONDUCTANCE ( mhos)D os V = - 4.5VGS(off) f = 1.0 kHz µ V = - 2.5VGS(off) -20V -10V -10V -20V -5.0V-5.0V __ _ _ Transconductance vs Drain Current 0.1 1 10 100 0.1 0.5 I - DRAIN CURRENT (mA) g - TRANSCONDUCTANCE (mmhos) D fs V = 2.5VGS(off) V = -15V f = 1.0 kHz DG V = 6.0VGS(off) - 55°C 25°C 125°C 25°C __ __ Capacitance vs Voltage 048 1 2 1 6 2 0 100 V - GATE-SOURCE VOLTAGE (V) C (C ) - CAPACITANCE (pF)rs GS is C (V = -15V)is DS C (V = -15V)rs DS f = 0.1 - 1.0 MHz P-Channel Switch (continued)
J174 / J175 / J176 / J177 / MMBFJ175 / MMBFJ176 / MMBFJ177 P-Channel Switch (continued) Typical Characteristics (continued) Noise Voltage vs Frequency 0.01 0.1 1 10 100 100 f - FREQUENCY (kHz) e - NOISE VOLTAGE (nV / Hz)n V = - 15V BW = 6.0 Hz @ f = 10 Hz, 100 Hz = 0.2f @ f ≥ 1.0 kHz DG I = 5.0 mAD I = - 0.2 mAD Channel Resistance vs Temperature -50 0 50 100 150 100 500 1000 T - AMBIENT TEMPERATURE ( C) r - DRAIN "ON" RESISTANCEDS A o (Ω ) V = 2.5VGS(off) V = 4.5VGS(off) V = 8.0VGS(off) V = -100 mV V = 0 DS GS Power Dissipation vs Ambient Temperature 0 25 50 75 100 125 150 100 150 200 250 300 350 TEMPERATURE ( C) P - POWER DISSIPATION (mW) D o TO-92 SOT-23
ACEx™ CoolFET™ CROSSVOLT™ E 2CMOS TM FACT™ FACT Quiet Series™ FAST FASTr™ GTO™ HiSeC™ The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: ISOPLANAR™ MICROWIRE™ POP™ PowerTrench™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 TinyLogic™ 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Preliminary No Identification Needed Obsolete This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Formative or In Design First Production Full Production Not In Production DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. UHC™ VCX™