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J175 / J176 / MMBFJ175 / MMBFJ176 / MMBFJ177 — P-Channel Switch Publication Order Number: J175/D ©1997 Semiconductor Components Industries, LLC. October-2017, Rev. 2 J175 / J176 / MMBFJ175 / MMBFJ176 / MMBFJ177 P-Channel Switch

Ordering Information

Figure 1. J175 / J176 Device Package Figure 2. MMBFJ175 / 176 / 177 Device Package Note: Source & drain are interchangeable.

Description

This device is designed for low-level analog switching sample-and-hold circuits and chopper-stabilized amplifiers. Sourced from process 88.

J175 / J176 / MMBFJ175 / MMBFJ176 / MMBFJ177 — P-Channel Switch www.onsemi.com Absolute Maximum Ratings(1),(2) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Notes: 1.These ratings are based on a maximum junction temperature of 150°C. 2.These are steady-state limits. ON Semiconductor should be consulted on applications involving pulsed or low- duty cycle operations. Thermal Characteristics Values are at TA = 25°C unless otherwise noted. Note: Symbol Parameter Value Unit VDG Drain-Gate Voltage -30 V VGS Gate-Source Voltage 30 V IGF Forward Gate Current 50 mA TJ, TSTG Operating and Storage Junction Temperature Range -55 to + 150 °C Symbol Parameter Max. Unit J175 / J176 (3) MMBFJ175 / MMBFJ176 / MMBFJ177 (3) PD Total Device Dissipation 350 225 mW Derate Above 25°C2 .8 1.8 mW/°C RθJC Thermal Resistance, Junction to Case 125 °C/W RθJA Thermal Resistance, Junction to Ambient 357 556 °C/W

J175 / J176 / MMBFJ175 / MMBFJ176 / MMBFJ177 — P-Channel Switch

Electrical Characteristics

Values are at TA = 25°C unless otherwise noted. Note: 4. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%. Symbol Parameter Conditions Min. Max. Unit Off Characteristics V(BR)GSS Gate-Source Breakdown Voltage I G = 1.0 μA, VDS = 0 30 V IGSS Gate Reverse Current VGS = 20 V, VDS = 0 1.0 nA VGS(off) Gate-Source Cut-Off Voltage V DS = -15 V, ID = -10 nA J175 / MMBFJ175 3.0 6.0 VJ176 / MMBFJ176 1.0 4.0 MMBFJ177 0.8 2.5 On Characteristics I DSS Zero-Gate Voltage Drain Current(4) VDS = -15 V, IGS = 0 J175 / MMBFJ175 -7.0 -60.0 mAJ176 / MMBFJ176 -2.0 -25.0 MMBFJ177 -1.5 -20.0 rDS(on) Drain-Source On Resistance V DS ≤0.1 V, VGS = 0 J175 / MMBFJ175 125 ΩJ176 / MMBFJ176 250 MMBFJ177 300 www.onsemi.com

Figure 14. 3-Lead, TO-92, Molded, 0.2 In Line Spacing Lead Form

Figure 15. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE TO-236, VARIATION AB, ISSUE H. MOLD FLASH AND TIE BAR EXTRUSIONS.

1.20 MAX

0.20 A B

0.20 MIN

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