J111 PHILIPS | Alldatasheet

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Technical content

Product specification File under Discrete Semiconductors, SC07 July 1993 DISCRETE SEMICONDUCTORS J111; J112; J113 N-channel silicon field-effect transistors

Philips Semiconductors Product specification N-channel silicon field-effect transistors J111; J112; J113

DESCRIPTION

Symmetrical silicon n-channel junction FETs in plastic TO-92 envelopes. They are intended for applications such as analog switches, choppers, commutators etc.

FEATURES

  • High speed switching
  • Interchangeability of drain and source connections
  • Low R DS on at zero gate voltage PINNING Note: Drain and source are interchangeable. 1 = gate 2 = source 3 = drain Fig.1 Simplified outline and symbol, TO-92. handbook, halfpage1 MAM042 s dg QUICK REFERENCE DATA J111 J112 J113 Drain-source voltage ±VDS max. 40 40 40 V Drain current VDS = 15 V; VGS =0 I DSS min. 20 5 2 mA Total power dissipation up to Tamb =5 0°CP tot max. 400 400 400 mW Gate-source cut-off voltage min. max. 0.5 V VVDS = 5 V; ID =1 µA −VGS off Drain-source on-state resistance VDS = 0.1 V; VGS =0 R DS on max. 30 50 100 Ω

Philips Semiconductors Product specification N-channel silicon field-effect transistors J111; J112; J113 RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) THERMAL RESISTANCE STATIC CHARACTERISTICS Tj=2 5°C unless otherwise specified Drain-source voltage ±VDS max. 40 V Gate-source voltage −VGSO max. 40 V Gate-drain voltage −VGDO max. 40 V Gate forward current (DC) I G max. 50 mA Total power dissipation up to Tamb =5 0°CP tot max. 400 mW Storage temperature range T stg −65 to+ 150 °C Junction temperature T j max. 150 °C From junction to ambient in free air R th j-a = 250 K/W J111 J112 J113 Gate reverse current −VGS = 15 V; VDS =0 −IGSS max. 1 1 1 nA Drain cut-off current VDS =5 V ;−VGS = 10 V −IDSX max. 1 1 1 nA Drain saturation current VDS = 15 V; VGS =0 I DSS min. 20 5 2 mA Gate-source breakdown voltage −IG =1 µA; VDS =0 −V(BR)GSS min. 40 40 40 V Gate-source cut-off voltage VDS = 5 V; ID =1 µA −VGS off min. 3 1 0.5 V max. 10 5 3 V Drain-source on-state resistance VDS = 0.1 V; VGS =0 R DSon max. 30 50 100 Ω

Philips Semiconductors Product specification N-channel silicon field-effect transistors J111; J112; J113 DYNAMIC CHARACTERISTICS Tj=2 5°C unless otherwise specified Input capacitance VDS =0 ;−VGS = 10 V; f = 1 MHz C is typ. 6 pF VDS = −VGS = 0; f = 1 MHz C is typ. 22 pF max. 28 pF Feedback capacitance VDS =0 ;−VGS = 10 V; f = 1 MHz C rs typ. 3 pF Switching times test conditions V DD = 10 V; VGS = 0 to VGSoff −VGS off= 12 V; RL = 750 Ω for J111 −VGS off= 7 V; RL = 1550 Ω for J112 −VGS off= 5 V; RL = 3150 Ω for J113 Rise time t r typ. 6 ns Turn-on time t on typ. 13 ns Fall time t f typ. 15 ns Turn-off time t off typ. 35 ns Fig.2 Switching times test circuit. ok, halfpage MBK289 50 Ω R L DUT 10 µF 1 µF VDD 10 nF 50 Ω SAMPLING SCOPE 50 Ω Fig.3 Input and output waveforms. MBK288 VGS off toff tf VGS = 0 V Vi Vo 10% 90% 90% 10% ton tr

Philips Semiconductors Product specification N-channel silicon field-effect transistors J111; J112; J113 PACKAGE OUTLINE UNIT A REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ mm 5.2 5.0 b 0.48 0.40 c 0.45 0.40 D 4.8 4.4 d 1.7 1.4 E 4.2 3.6 L 14.5 12.7 e 2.54 1.27 L1(1) 2.5 0.66 0.56 DIMENSIONS (mm are the original dimensions) Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. SOT54 TO-92 SC-43 97-02-28 A L 0 2.5 5 mm scale b c D b1 L1 d E Plastic single-ended leaded (through hole) package; 3 leads SOT54 e

Philips Semiconductors Product specification N-channel silicon field-effect transistors J111; J112; J113 DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Short-form specification The data in this specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.