J111 LINEAR | Alldatasheet
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DIRECT REPLACEMENT FOR SILICONIX J/SST111 SERIES LOW GATE LEAKAGE CURRENT 5pA FAST SWITCHING 4ns ABSOLUTE MAXIMUM RATINGS1 @ 25 °C (unless otherwise stated) Maximum Temperatures Storage Temperature -55 to 150°C Junction Operating Temperature -55 to 135°C Maximum Power Dissipation Continuous Power Dissipation (J) 360mW Continuous Power Dissipation (SST) 350mW Maximum Currents Gate Current 50mA Maximum Voltages Gate to Drain -35V Gate to Source -35V STATIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated) J/SST111 J/SST112 J/SST113 SYM. CHARACTERISTIC TYP MIN MAX MIN MAX MIN MAX UNIT CONDITIONS BVGSS Gate to Source Breakdown Voltage -35 -35 -35 IG = -1µA, VDS = 0V VGS(off) Gate to Source Cutoff Voltage -3 -10 -1 -5 -3 VDS = 5V, ID = 1µA VGS(F) Gate to Source Forward Voltage 0.7 V IG = 1mA, VDS = 0V IDSS Drain to Source Saturation Current2 20 5 2 mA VDS = 15V, VGS = 0V IGSS Gate Leakage Current -0.005 -1 -1 -1 nA VGS = -15V, VDS = 0V IG Gate Operating Current -5 pA VDG = 15V, ID = 10mA ID(off) Drain Cutoff Current 0.005 1 1 1 nA VDS = 5V, VGS = -10V rDS(on) Drain to Source On Resistance 30 50 100 Ω IG = 1mA, VDS = 0V J SERIES TO-92 BOTTOM VIEW 12 3 DS G TO 92 SST SERIES SOT-23 TOP VIEW D G S Linear Integrated Systems J/SST111 SERIES SINGLE N-CHANNEL JFET Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
DYNAMIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated) J/SST111 J/SST112 J/SST113 SYM. CHARACTERISTIC TYP MIN MAX MIN MAX MIN MAX UNIT CONDITIONS gfs Forward Transconductance 6 mS gos Output Conductance 25 µS VDS = 20V, ID = 1mA f = 1kHz rds(on) Drain to Source On Resistance 30 50 100 Ω VGS = 0V, ID = 0mA f = 1kHz Ciss Input Capacitance 7 12 12 12 Crss Reverse Transfer Capacitance 3 5 5 5 pF VDS = 0V, VGS = -10V f = 1MHz en Equivalent Noise Voltage 3 nV/√Hz VDG = 10V, ID = 1mA f = 1 kHz Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261 SWITCHING CIRCUIT CHARACTERISTICS SYM. J/SST111 J/SST112 J/SST113 VGS(L) -12V -7V -5V RL 800Ω 1600Ω 3200Ω ID(on) 12mA 6mA 3mA SWITCHING CHARACTERISTICS SYM. CHARACTERISTIC TYP UNIT CONDITIONS td(on) 2 tr Turn On Time td(off) 6 tf Turn Off Time ns VDD = 10V VGS(H) = 0V 51Ω RL 1kΩ 51Ω VDD VGS(H) VGS(L) OUT 123 LS XXX YYWW 0.170 0.195 0.500 0.610 0.016 0.022 0.095 0.105 0.045 0.055 0.175 0.195 0.130 0.155 0.045 0.060 0.014 0.020 TO-92 DIMENSIONS IN INCHES. SOT-23 DIMENSIONS IN MILLIMETERS 0.89 1.03 1.78 2.05 1.20 1.40 2.10 2.64 0.37 0.51 2.80 3.04 0.89 1.12 0.013 0.100 0.085 0.180 0.55 SWITCHING TEST CIRCUIT NOTES 1. Absolute maximum ratings are limiting values above which serviceability may be impaired. 2. Pulse test: PW ≤ 300µs, Duty Cycle ≤ 3% Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implicatio otherwise under any patent or patent rights of Linear Integrated Systems. n or