J111_V01 ONSEMI | Alldatasheet

Document overview

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Technical content

Features

  • This Device is Designed for Low Level Analog Switching, Sample and Hold Circuits and Chopper Stabilized Amplifiers
  • Sourced from Process 51
  • Source & Drain are Interchangeable
  • These are Pb−Free Devices ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) (Note 1, 2) Symbol Parameter Value Unit VDG Drain−Gate Voltage 35 V VGS Gate−Source Voltage −35 V IGF Forward Gate Current 50 mA TJ, TSTG Operating and Storage Junction Temperature Range −55 to 150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. These ratings are based on a maximum junction temperature of 150 °C. 2. These are steady −state limits. ON Semiconductor should be consulted on applications involving pulsed or low−duty−cycle operations. THERMAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Parameter Max Unit J111 / J112 / J113 (Note 3) MMBFJ111 / MMBFJ112 / MMBFJ113 (Note 4) PD Total Device Dissipation 625 350 mW Derate Above 25/C0095C 5.0 2.8 mW/°C R/C0113JC Thermal Resistance, Junction−to−Case 125 − °C/W R/C0113JA Thermal Resistance, Junction−to−Ambient 200 357 °C/W with minimum land pattern size. 4. Device mounted on FR−4 PCB 36 mm x 18 mm x 1.5 mm; mounting pad for the collector lead minimum 6 cm2. www.onsemi.com MARKING DIAGRAMS See detailed ordering and shipping information on page 6 of this data sheet.

ORDERING INFORMATION

TO−92 3 4.83x4.76 LEADFORMED CASE 135AR TO−92 3 4.825x4.76 CASE 135AN SOT−23 (TO−236) CASE 318−08 XXM XXXX, XX = Specific Device Code A = Assembly Plant Code Y = Year WW = Work Week M = Date Code SOT−23 CASE 318BM AX XXX YWW D S G D SG G D S G D S

J111, J112, J113, MMBFJ111, MMBFJ112, MMBFJ113 www.onsemi.com ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Parameter Test Condition Min Max Unit OFF CHARACTERISTICS V(BR)GSS Gate−Source Breakdown Voltage IG = −1.0 /C0109A, VDS = 0 −35 − V IGSS Gate Reverse Current VGS = −15 V, VDS = 0 − −1.0 nA VGS(off) Gate−Source Cut−Off Voltage VDS = 5 V, ID = 1.0 /C0109A 111 −3.0 −10.0 V 112 −1.0 −5.0 113 −0.5 −3.0 ID(off) Drain Cutoff Leakage Current VDS = 5.0 V, VGS = −10 V − 1.0 nA ON CHARACTERISTICS IDSS Zero−Gate Voltage Drain Current (Note 5) VDS = 15 V, VGS = 0 111 20 − mA 112 5.0 − 113 2.0 − rDS(on) Drain−Source On Resistance VDS ≤ 0.1 V, VGS = 0 111 − 30 /C0087 112 − 50 113 − 100 SMALL SIGNAL CHARACTERISTICS Cdg(on) Csg(on) Drain−Gate &Source−Gate On Capacitance VDS = 0, VGS = 0, f = 1.0 MHz − 28 pF Cdg(off) Drain−Gate Off Capacitance VDS = 0, VGS = −10 V, f = 1.0 MHz − 5.0 pF Csg(off) Source−Gate Off Capacitance VDS = 0, VGS = −10 V, f = 1.0 MHz − 5.0 pF Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulse test: pulse width ≤300 /C0109s, duty cycle ≤2%.

J111, J112, J113, MMBFJ111, MMBFJ112, MMBFJ113 www.onsemi.com Part Number Top Mark Package Shipping† J111 AJ 111 YWW TO−92 3L (Pb−Free)

10000 Units / Bulk

J111−D26Z AJ 111 YWW TO−92 3L (Pb−Free) 2000 / Tape & Reel J111−D74Z AJ 111 YWW TO−92 3L (Pb−Free) 2000 / Ammo J112 AJ 112 YWW TO−92 3L (Pb−Free) J112−D26Z AJ 112 YWW TO−92 3L (Pb−Free) 2000 / Tape & Reel J112−D27Z AJ 112 YWW TO−92 3L (Pb−Free) 2000 / Tape & Reel J112−D74Z AJ 112 YWW TO−92 3L (Pb−Free) 2000 / Ammo J113 AJ 113 YWW TO−92 3L (Pb−Free) J113−D74Z AJ 113 YWW TO−92 3L (Pb−Free) 2000 / Ammo MMBFJ111 6P SOT−23 3L (Pb−Free) 3000 / Tape & Reel MMBFJ112 6R SOT−23 3L (Pb−Free) 3000 / Tape & Reel MMBFJ113 6S SOT−23 3L (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

TO−92 3 4.825x4.76 CASE 135AN ISSUE O DATE 31 JUL 2016 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. 98AON13880GDOCUMENT NUMBER: DESCRIPTION: Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1TO−92 3 4.825X4.76 © Semiconductor Components Industries, LLC, 2019 www.onsemi.com

TO−92 3 4.83x4.76 LEADFORMED CASE 135AR ISSUE O DATE 30 SEP 2016 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. 98AON13879GDOCUMENT NUMBER: DESCRIPTION: Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1TO−92 3 4.83X4.76 LEADFORMED © Semiconductor Components Industries, LLC, 2019 www.onsemi.com

SOT−23 (TO−236) CASE 318−08 ISSUE AS DATE 30 JAN 2018 SCALE 4:1 D 1 2 XXXM/C0071 /C0071 XXX = Specific Device Code M = Date Code /C0071= Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ /C0071”, may or may not be present. GENERIC MARKING DIAGRAM* NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. SOLDERING FOOTPRINT VIEW C L 0.25 e E E b A SEE VIEW C DIM A MIN NOM MAX MIN MILLIMETERS 0.89 1.00 1.11 0.035 INCHES A1 0.01 0.06 0.10 0.000 b 0.37 0.44 0.50 0.015 c 0.08 0.14 0.20 0.003 D 2.80 2.90 3.04 0.110 E 1.20 1.30 1.40 0.047 e 1.78 1.90 2.04 0.070 L 0.30 0.43 0.55 0.012 0.039 0.044 0.002 0.004 0.017 0.020 0.006 0.008 0.114 0.120 0.051 0.055 0.075 0.080 0.017 0.022 NOM MAX H STYLE 22: PIN 1. RETURN 2. OUTPUT 3. INPUT STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 7: PIN 1. EMITTER 2. BASE 3. COLLECTOR STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE STYLE 9: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 10: PIN 1. DRAIN 2. SOURCE 3. GATE STYLE 11: PIN 1. ANODE 2. CATHODE 3. CATHODE −ANODE STYLE 12: PIN 1. CATHODE 2. CATHODE 3. ANODE STYLE 13: PIN 1. SOURCE 2. DRAIN 3. GATE STYLE 14: PIN 1. CATHODE 2. GATE 3. ANODE STYLE 15: PIN 1. GATE 2. CATHODE 3. ANODE STYLE 16: PIN 1. ANODE 2. CATHODE 3. CATHODE STYLE 17: PIN 1. NO CONNECTION 2. ANODE 3. CATHODE STYLE 18: PIN 1. NO CONNECTION 2. CATHODE 3. ANODE STYLE 19: PIN 1. CATHODE 2. ANODE 3. CATHODE −ANODE STYLE 23: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 20: PIN 1. CATHODE 2. ANODE 3. GATE STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN STYLE 1 THRU 5: CANCELLED STYLE 24: PIN 1. GATE 2. DRAIN 3. SOURCE STYLE 25: PIN 1. ANODE 2. CATHODE 3. GATE STYLE 26: PIN 1. CATHODE 2. ANODE 3. NO CONNECTION STYLE 27: PIN 1. CATHODE 2. CATHODE 3. CATHODE c T TOP VIEW SIDE VIEW END VIEW 2.90 0.80 DIMENSIONS: MILLIMETERS 0.90 PITCH 3X 0.95 RECOMMENDED STYLE 28: PIN 1. ANODE 2. ANODE 3. ANODE MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. 98ASB42226BDOCUMENT NUMBER: DESCRIPTION: Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1SOT−23 (TO−236) © Semiconductor Components Industries, LLC, 2019 www.onsemi.com

SOT−23 CASE 318BM ISSUE A DATE 01 SEP 2021 XXXM/C0071 /C0071 XXX = Specific Device Code M = Date Code /C0071= Pb−Free Package GENERIC MARKING DIAGRAM* *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “/C0071”, may or may not be present. Some products may not follow the Generic Marking. MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS 98AON13784GDOCUMENT NUMBER: DESCRIPTION: Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1SOT−23 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2021 www.onsemi.com

onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com onsemi Website: www.onsemi.com Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative