J108 PHILIPS | Alldatasheet

Document overview

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Technical content

Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC07

1996 Jul 30

J108; J109; J110 N-channel silicon junction FETs

1996 Jul 30 2

Philips Semiconductors Product specification N-channel silicon junction FETs J108; J109; J110

FEATURES

  • High speed switching
  • Interchangeability of drain and source connections
  • Low RDSon at zero gate voltage (<8Ω for J108).

APPLICATIONS

  • Analog switches
  • Choppers and commutators.

DESCRIPTION

N-channel symmetrical silicon junction field-effect transistors in a TO-92 package. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. PINNING - TO-92 PIN SYMBOL DESCRIPTION 1 g gate 2 s source 3 d drain Fig.1 Simplified outline and symbol. handbook, halfpage MAM197 s d g QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage −± 25 V VGSoff gate-source cut-off voltage I D =1 µA; VDS =5V J108 −3 −10 V J109 −2 −6V J110 −0.5 −4V IDSS drain current V GS = 0; VDS =5V J108 80 − mA J109 40 − mA J110 10 − mA Ptot total power dissipation up to T amb =5 0°C − 400 mW

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Philips Semiconductors Product specification N-channel silicon junction FETs J108; J109; J110 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). THERMAL CHARACTERISTICS STATIC CHARACTERISTICS Tj=2 5°C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage −± 25 V VGSO gate-source voltage open drain −− 25 V VGDO gate-drain voltage open source −− 25 V IG forward gate current (DC) − 50 mA Ptot total power dissipation up to T amb =5 0°C − 400 mW Tstg storage temperature −65 150 °C Tj operating junction temperature − 150 °C SYMBOL PARAMETER VALUE UNIT R th j-a thermal resistance from junction to ambient 250 K/W SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)GSS gate-source breakdown voltage IG = −1 µA; VDS =0 −−− 25 V VGSoff gate-source cut-off voltage I D =1 µA; VDS =5V V J108 −3 −− 10 V J109 −2 −− 6V J110 −0.5 −− 4V IDSS drain current V GS = 0; VDS =1 5V J108 80 −− mA J109 40 −− mA J110 10 −− mA IGSS gate leakage current V GS = −15 V; VDS =0 −−− 3n A IDSX drain-source cut-off current V GS = −10 V; VDS =5V −− 3n A R DSon drain-source on-state resistance VGS = 0; VDS = 100 mV J108 −− 8 Ω J109 −− 12 Ω J110 −− 18 Ω

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Philips Semiconductors Product specification N-channel silicon junction FETs J108; J109; J110 DYNAMIC CHARACTERISTICS Tj=2 5°C; unless otherwise specified. Note 1. Test conditions for switching times are as follows: VDD = 1.5 V; VGS = 0 to VGSoff (all types) VGSoff = −12 V; RL = 100Ω (J108) VGSoff = −7 V; RL = 100Ω (J109) VGSoff = −5 V; RL = 100Ω (J110). SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT C is input capacitance V DS = 0; VGS = −10 V; f = 1 MHz 15 30 pF VDS = 0; VGS = 0; f = 1 MHz; Tamb =2 5°C 50 85 pF C rs reverse transfer capacitance VDS = 0; VGS = −10 V; f = 1 MHz 8 15 pF Switching times; see Fig.2 td delay time note 1 2 − ns ton turn-on time 4 − ns ts storage time 4 − ns toff turn-off time 6 − ns Fig.2 Switching circuit. handbook, halfpage MGE773 R L 50 Ω DUT SAMPLING SCOPE 50 Ω 50 Ω 0.1 µF 10 µF10 nF VDD

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Philips Semiconductors Product specification N-channel silicon junction FETs J108; J109; J110 Fig.3 Input and output waveforms. handbook, full pagewidth MGE774 VGS off toff tfts VGS = 0 V Vi Vo 10% 90% 90% 10% ton td tr

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Philips Semiconductors Product specification N-channel silicon junction FETs J108; J109; J110 PACKAGE OUTLINE Fig.4 TO-92 (SOT54). Dimensions in mm. (1) Terminal dimensions in this zone are uncontrolled. andbook, full pagewidth MBC014 - 1 2.544.8 max 4.2 max 1.7 1.4 0.66 0.56 5.2 max 12.7 min 2.0 max(1) 0.48 0.40 0.40 min

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Philips Semiconductors Product specification N-channel silicon junction FETs J108; J109; J110 DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.