J108 LINEAR | Alldatasheet
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FEATURES
Direct Replacement for Siliconix J/SST: 108, 109, 110, & 110A LOW ON RESISTANCE rDS(on) ≤ 8Ω FAST SWITCHING tON ≤ 4ns ABSOLUTE MAXIMUM RATINGS1 @ 25 °C (unless otherwise stated) Maximum Temperatures Storage Temperature -55 to 150°C Junction Operating Temperature -55 to 150°C Maximum Power Dissipation Continuous Power Dissipation 350mW Maximum Currents Gate Current 50mA Maximum Voltages Gate to Drain or Source -25V STATIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated) J/SST108 J/SST109 J/SST110 SYM. CHARACTERISTIC TYP MIN MAX MIN MAX MIN MAX UNIT CONDITIONS BVGSS Gate to Source Breakdown Voltage -25 -25 -25 IG = -1µA, VDS = 0V VGS(off) Gate to Source Cutoff Voltage -3 -10 -2 -6 -0.5 -4 VDS = 5V, ID = 1µA VGS(F) Gate to Source Forward Voltage 0.7 V IG = 1mA, VDS = 0V IDSS Drain to Source Saturation Current2 80 40 10 mA VDS = 15V, VGS = 0V IGSS Gate Leakage Current -0.01 -3 -3 -3 VGS = -15V, VDS = 0V IG Gate Operating Current -0.01 VDG = 10V, ID = 10mA ID(off) Drain Cutoff Current 0.02 3 3 3 nA VDS = 5V, VGS = -10V 108, 109, 110 8 12 18 rDS(on) Drain to Source On Resistance 110A 25 Ω VGS = 0V, VDS ≤ 0.1V DYNAMIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated) J/SST108 J/SST109 J/SST110 SYM. CHARACTERISTIC TYP MIN MAX MIN MAX MIN MAX UNIT CONDITIONS gfs Forward Transconductance 17 gos Output Conductance 0.6 mS VDS = 5V, ID = 10mA f = 1kHz rds(on) Drain to Source On Resistance 8 12 18 Ω VGS = 0V, ID = 0A f = 1kHz SST 60 Ciss Input Capacitance J 60 85 85 85 VDS = 0V, VGS = 0V f = 1MHz SST 11 Crss Reverse Transfer Capacitance J 11 15 15 15 pF VDS = 0V, VGS = -10V f = 1MHz en Equivalent Input Noise Voltage 3.5 nV/√Hz VDS = 5V, ID = 10mA f = 1kHz J SERIES TO-92 BOTTOM VIEW 123 DS G SST SERIES SOT-23 TOP VIEW D G S Linear Integrated Systems J/SST108 SERIES LOW NOISE SINGLE N-CHANNEL JFET SWITCH Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
SYM. CHARACTERISTIC TYP UNIT CONDITIONS td(on) 3 tr Turn On Time td(off) 4 tf Turn Off Time ns VDD = 1.5V VGS(H) = 0V 51Ω 1kΩ 51Ω SWITCHING TEST CIRCUIT RL VDD VGS(H) VGS(L) OUT SWITCHING CIRCUIT CHARACTERISTICS SYM. J/SST108 J/SST109 J/SST110 VGS(L) -12V -7V -5V RL 150Ω 150Ω 150Ω ID(on) 10mA 10mA 10mA Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261 n or SOT-23 DIMENSIONS IN MILLIMETERS 0.89 1.03 1.78 2.05 1.20 1.40 2.10 2.64 0.37 0.51 2.80 3.04 0.89 1.12 0.013 0.100 0.085 0.180 0.55 12 3 LS XXX YYWW 0.170 0.195 0.500 0.610 0.016 0.022 0.095 0.105 0.045 0.055 0.175 0.195 0.130 0.155 0.045 0.060 0.014 0.020 TO-92 DIMENSIONS IN INCHES. NOTES 1. Absolute maximum ratings are limiting values above which serviceability may be impaired. 2. Pulse test: PW ≤ 300µs, Duty Cycle ≤ 3% Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implicatio otherwise under any patent or patent rights of Linear Integrated Systems.