J108

J108 FAIRCHILD | Alldatasheet

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This device is designed for analog or digital switching applications where very low on resistance is mandatory. Sourced from Process 58. G S D TO-92 Absolute Maximum Ratings* TA = 25°C unless otherwise noted *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES : 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units J108 / J109 / J110 PD Total Device Dissipation Derate above 25°C 350 2.8 mW mW/ °C RθJC Thermal Resistance, Junction to Case 125 °C/W RθJA Thermal Resistance, Junction to Ambient 357 °C/W Symbol Parameter Value Units VDG Drain-Gate Voltage 25 V VGS Gate-Source Voltage - 25 V IGF Forward Gate Current 10 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C Discrete POWER & Signal Technologies  1997 Fairchild Semiconductor Corporation

Electrical Characteristics TA = 25°C unless otherwise noted OFF CHARACTERISTICS Symbol Parameter Test Conditions Min Max Units ON CHARACTERISTICS SMALL SIGNAL CHARACTERISTICS IDSS Zero-Gate Voltage Drain Current* VDS = 15 V, IGS = 0 J108 J109 J110 mA mA mA rDS(on) Drain-Source On Resistance V DS ≤ 0.1 V, VGS = 0 J108 J109 J110 8.0 Ω Ω Ω V(BR)GSS Gate-Source Breakdown Voltage IG = - 10 µ A, VDS = 0 - 25 V IGSS Gate Reverse Current V GS = - 15 V, VDS = 0 VGS = - 15 V, VDS = 0, TA = 100°C - 3.0 - 200 nA nA VGS(off) Gate-Source Cutoff Voltage V DS = 15 V, ID = 10 nA J108 J109 J110 - 3.0 - 2.0 - 0.5 - 10 - 6.0 - 4.0 V V V Cdg(on) Csg(off) Drain Gate & Source Gate On Capacitance V DS = 0, VGS = 0, f = 1.0 MHz 85 pF Cdg(off) Drain-Gate Off Capacitance V DS = 0, VGS = - 10 V, f = 1.0 MHz 15 pF Csg(off) Source-Gate Off Capacitance V DS = 0, VGS = - 10 V, f = 1.0 MHz 15 pF Typical Characteristics *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% J108 / J109 / J110 N-Channel Switch (continued) Common Drain-Source 0 0.4 0.8 1.2 1.6 2 100 V - DRAIN-SOURCE VOLTAGE (V) I - DRAIN CURRENT (mA) DS D T = 25°C TYP V = - 5.0 VGS(off) A - 4.0 V - 5.0 V - 3.0 V - 2.0 V - 1.0 V V = 0 VGS Parameter Interactions 0.1 0.5 1 5 10 100 100 500 1,000 V - GATE CUTOFF VOLTAGE (V) r - DRAIN "ON" RESISTANCE GS (OFF) DS I @ V = 5.0V , V = 0 PULSED r @ V = 100mV, V = 0 V @ V = 5.0V, I = 3.0 nAGS(off) DSS rDS IDSS (ΩΩ ) DS DS D GS GS DSSI - DRAIN CURRENT (mA) DS DS

(continued) Typical Characteristics (continued) Common Drain-Source 0123450 V - DRAIN-SOURCE VOLTAGE (V) I - DRAIN CURRENT (mA) DS D - 0.1 V V = 0 VGS T = 25°C TYP V = - 0.7 VGS(off) A Normalized Drain Resistance vs Bias Voltage 0 0.2 0.4 0.6 0.8 1 100 V /V - NORMALIZED GA TE-SOURCE VOLTAGE (V) r - NORMALIZED RESISTANCE GS DS r = DS V @ 5.0V, 10 µµ AGS(off) r DS V GS(off) V GS1 - GS(off) Noise Voltage vs Frequency 0.01 0.03 0.1 0.5 1 2 10 100 100 f - FREQUENCY (kHz) e - NOISE VOLTAGE (nV / Hz)n V = 10V BW = 6.0 Hz @ f = 10 Hz, 100 Hz DG I = 10 mAD I = 1.0 mAD Switching Turn-On Time vs Drain Current 0 5 10 15 20 25 I - DRAIN CURRENT (mA) t - TURN-OFF TIME (ns) D OFF V = - 8.5V V = - 5.5V V = - 3.5V GS(off) GS(off) GS(off) T = 25°C V = 1.5V V = - 12VGS(off) A DD Common Drain-Source -20-16-12-8-40 100 V - GATE-SOURCE VOLTAGE (V) C (C ) - CAPACITANCE (pF) GS ts C (V = 5.0V)iss f = 0.1 - 1.0 MHz DS C (V = 0 )rss DS rsON GS(off) Switching Turn-On Time vs Gate-Source Cutoff Voltage -10-8-6-4-20 V - GATE-SOURCE CUTOFF VOLTAGE (V) t - TURN-ON TIME (ns) T = 25°C V = 1.5V V = - 12VGS(off) A DD I = 30 mAD I = 10 mAD

Typical Characteristics (continued) J108 / J109 / J110 N-Channel Switch (continued) On Resistance vs Drain Current 1 10 100 100 I - DRAIN CURRENT (mA) r - DRAIN "ON" RESISTANCE D DS V = - 3.0VGS(off) 25°C (ΩΩ ) 125°C 25°C 125°C V = - 5.0VGS(off) V = 0GS - 55°C Output Conductance vs Drain Current 0.1 1 10 100 I - DRAIN CURRENT (mA) g - OUTPUT CONDUCTANCE ( mhos)D os V GS(off) T = 25°C f = 1.0 kHz V = 5.0VDG µµ A 10V 15V 20V 5.0V 5.0V 10V 15V 20V - 4.0V 10V 15V 20V - 2.0V - 1.0V Transconductance vs Drain Current 0.1 1 10 100 I - DRAIN CURRENT (mA) g - TRANSCONDUCTANCE (mmhos) D fs V = - 1.0V V = - 3.0V V = - 5.0V GS(off) GS(off) GS(off) T = 25°C V = 10V f = 1.0 kHz A DG T = - 55°C T = 25°C T = 125°C A A A Power Dissipation vs Ambient Temperature 0 25 50 75 100 125 150 100 150 200 250 300 350 TEMPERATURE ( C) P - POWER DISSIP A TION (mW) D o TO-92