J105

J105 FAIRCHILD | Alldatasheet

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J105 / J106 / J107 / JFTJ105 J105 J106 J107 N-Channel Switch This device is designed for analog or digital switching applications where very low On Resistance is mandatory. Sourced from Process 59. JFTJ105 Absolute Maximum Ratings* TA = 25°C unless otherwise noted *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES : 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Parameter Value Units VDG Drain-Gate Voltage 25 V VGS Gate-Source Voltage - 25 V IGF Forward Gate Current 10 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C Symbol Characteristic Max Units J105 / J106 / J107 PD Total Device Dissipation Derate above 25°C 350 2.8 mW mW/ °C RθJC Thermal Resistance, Junction to Case 125 °C/W RθJA Thermal Resistance, Junction to Ambient 357 °C/W Discrete POWER & Signal Technologies  1997 Fairchild Semiconductor Corporation G S D TO-92 D S G SOT-223 G

J105 / J106 / J107 / JFTJ105 Electrical Characteristics TA = 25°C unless otherwise noted OFF CHARACTERISTICS Symbol Parameter Test Conditions Min Max Units ON CHARACTERISTICS SMALL SIGNAL CHARACTERISTICS *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% IDSS Zero-Gate Voltage Drain Current* VDS = 15 V, IGS = 0 J105 J106 J107 500 200 100 mA mA mA rDS(on) Drain-Source On Resistance V DS ≤ 0.1 V, VGS = 0 J105 J106 J107 3.0 6.0 8.0 Ω Ω Ω V(BR)GSS Gate-Source Breakdown Voltage IG = - 10 µ A, VDS = 0 - 25 V IGSS Gate Reverse Current V GS = - 15 V, VDS = 0 VGS = - 15 V, VDS = 0, TA = 100°C - 3.0 - 200 nA nA VGS(off) Gate-Source Cutoff Voltage V DS = 15 V, ID = 10 nA J105 J106 J107 - 4.5 - 2.0 - 0.5 - 10 - 6.0 - 4.5 V V V Cdg(on) Csg(on) Drain Gate & Source Gate On Capacitance V DS = 0, VGS = 10 V, f = 1.0 MHz 160 pF Cdg(off) Drain-Gate Off Capacitance V DS = 0, VGS = 10 V, f = 1.0 MHz 35 pF Csg(off) Source-Gate Off Capacitance V DS = 0, VGS = 10 V, f = 1.0 MHz 35 pF Typical Characteristics Common Drain-Source Characteristics 00 . 511 . 52 100 150 200 V - DRAIN-SOURCE VOLTAGE(V) I - DRAIN CURRENT (mA) DS D V = 0 VGS -1 V -2 V -3 V -4 V -5 V TYP V = -5VGS(OFF) T = + 25 C A Common Drain-Source Characteristics 012345 V - DRAIN-SOURCE VOLTAGE(V) I - DRAIN CURRENT (mA)D DS V = 0 VGS TYP V = -0.7VGS(OFF) T = + 25 C A - 0.1V - 0.2V -0 .4V - 0.5V - 0.3V J105 / J106 / J107 / NDSJ105 N-Channel Switch (continued)

J105 / J106 / J107 / JFTJ105 Typical Characteristics (continued) Capacitance vs Voltage -20-15-10-50 V - GA TE-SOURCE VOLTAGE (V) Cis (Crs) - CAPACITANCE (pf) GS f =0.1- 1.0MH z C ( V = 5 V ) is DS C ( V = 0 V )rs DS Parameter Interactions 0.1 0.2 0.3 0.5 1 2 3 5 10 100 200 100 200 500 1,000 2,000 V - GATE CUT OFF VOLTAGE (V) r - DRAIN "ON" RESISTANCE ( ) I - DRAIN CURRENT (mA) DS r @ VDS=100MV, VGS = 0DS V @ VDS = 5.0V , ID =3nA GS(OFF) DSr IDS S GS ΩΩ D Normalized Drain Resistance vs Bias Voltage 0 0.2 0.4 0.6 0.8 1 0.5 V / V -- NORMALIZED GA TE TO SOURCE VOLTAGE (V)r --- NORMALIZED RESISTANCE GS GS(OFF) DSb V @5V, 10uAGS(OFF) r = DSb rDS V V GS GS(OFF) On Resistance vs Drain Current 1 2 3 5 10 20 30 50 100 I - DRAIN CURRENT (mA) r - DRAIN "ON" RESISTANCE ( ) DS D V = 0GS V = - 3.0V GS(OFF) +125 C V = - 5.0V GS(OFF) +2 5 C +125 C +2 5 C - 55 C Output Conductance vs Drain Current 0.1 0.2 0.3 0.5 1 2 3 5 10 I - DRAIN CURRENT (mA) g - OUTPUT CONDUCTANCE (u mhos) V GS(OFF) -2 .0V -4 .0V -1 .0V V DG = 5.0V 20V 10V 5.0V 5.0V 10V 10V 15V 15V 15V 20V 20V T = +25 C f = 1.0 K Hz A D os Transconductance vs Drain Current 0.1 0.2 0.3 0.5 1 2 3 5 10 I - DRAIN CURRENT (mA) g - TRANSCONDUCTANCE (u mhos) T = +125 C V DG = 10. 0V T = +25 C f = 1.0 k H z D T = +25 CA T = - 55 CA A A V = - 1.0V GS(OFF) V = - 5.0V GS(OFF) V = - 3.0V GS(OFF) fs N-Channel Switch (continued)

J105 / J106 / J107 / JFTJ105 Typical Characteristics (continued) Noise Voltage vs Frequency 0.01 0.03 0.1 0.3 1 3 10 30 100 f - FREQUENCY (k Hz) en - NOISE VOLTAGE (nV/ )Hz V = 10 V BW = 6.0 Hz @ f = 10Hz, 100 Hz = 0.2f @ f > 1.0 k Hz DG I = 1 mA I = 10 mAD D N-Channel Switch (continued) Power Dissipation vs Ambient Temperature 0 25 50 75 100 125 150 100 150 200 250 300 350 TEMPERATURE ( C) P - POWER DISSIP A TION (mW) D o TO-92