J100N50X4B ANAREN | Alldatasheet
Document overview
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- PDF pages: 2
Technical content
USA/Canada: Toll Free: Europe : (315) 432-8909 (800) 544-2414 +44 2392-232392 Model J100N50X4B Features:
- RoHS Compliant
- 100 Watts
- DC – 4.0 GHz
- AlN Ceramic
- Non-Nichrome Resistive Element
- Low VSWR
- 100% Tested Half Flange Termination
100 Watts, 50 ΩΩ ΩΩ
Description
The J100N50X4B is high performance Aluminum Nitride (AlN) half flange termination intended as a cost competitive alternative to Beryllium Oxide (BeO). The termination is well suited to all cellular frequency bands such as; AMPS, GSM, DCS, PCS, PHS and UMTS. The high power handling makes the part ideal for terminating circulators, and for use in power combiners. The termination is also RoHS compliant! General Specifications Resistive Element Thick Film Substrate AlN Ceramic Mounting Flange Copper, nickel plated per QC-N-290 Operating Temperature -55°C to +150°C (see de rating chart) Tolerance is ±0.010”, unless otherwise specified. Designed to meet or exceed applicable portions of MIL-E-5400. All dimensions in inches. Electrical Specifications Resistance Value: 50 Ohms, ± 2% Power: 100 Watts Frequency Range: DC – 4.0 GHz Return Loss > 26 dB to 1.3 GHz > 22 dB to 4.0GHz Specification based on unit properly installed using suggested mounting instructions and a 50 ohm nominal impedance. Specifications subject to change. Outline Drawing UNLESS OTHERWISE SPECIFIED DIMENSIONS ARE IN INCHES LEAD LENGTH: 0.150” MIN 1 of 2
USA/Canada: Toll Free: Europe: (315) 432-8909 (800) 544-2414 +44 2392-232392 Model J100N50X4B Typical Performance: Freq (GHz) -50.00 -45.00 -40.00 -35.00 -30.00 -25.00 -20.00 -15.00 -10.00 -5.00 0.00 Return Loss (dB) 2.00 1.00 0.50 1.00 -1.00 0.50 -0.50 0.20 -0.20 0.00 0 70 80 90 100 110 120 130 140 150 160 170 180 -170 -160 -150 -140 -130 -120 -110 -100 -90 -80 -70 -60 -50 -40 -30 -20 -10 Smith Chart 1 Power De-rating: Mounting Footprint and Procedure: *Actual performance could be limited by the solder properties of the application 2 of 2