IS0-1845ASRH/SAMPLE

IS-1845ASRH RENESAS | Alldatasheet

Document overview

• Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
• PDF pages: 5

Technical content

Features

• Electrically Screened to DSCC SMD # 5962-01509
• QML Qualified per MIL-PRF-38535 Requirements
• Radiation acceptance testing - IS-1845ASRH
• Radiation acceptance testing - IS-1845ASEH
• SEE hardness (see SEE report for details)

Applications

• Current-Mode Switching Power Supplies
• Control of High Current FET Drivers
• M o t o r S p e e d a n d D i r e c t i o n C o n t r o l Pin Configurations IS7-1845ASRH, IS7-1845ASEH (8 LD CDIP2-T8 SBDIP) TOP VIEW IS9-1845ASRH, IS9-1845ASEH (18 LD FLATPACK) TOP VIEW NOTES: 1. Grounding the COMP pin does not inhibit the output. The outp ut may be inhibited by applying >1.2V to the ISENSE pin. 2. This part is produc tion tested with Ct = 3.3nF and Rt = 10k timing components only. COMP VFB ISENSE RTCT VREF VCC OUT GND Note 1 Note 2 COMP VFB NC NC NC ISENSE RTCT NC 21 7 VREF VCC VC OUT NC GND OSCGND NC NC1 18NC Note 1 Note 2

IS-1845ASRH, IS-1845ASEH FN9001 Rev.7.01 Page 2 of 4 Feb 16, 2022

Ordering Information

NUMBER (Note 3)P A R T N U M B E R ( Note 4) RADIATION HARDNESS (Total Ionizing Dose) PACKAGE DESCRIPTION (RoHS Compliant) PKG. DWG. # TEMP. RANGE 5962F0150901V9A IS0-1845ASRH-Q ( Note 5) HDR to 300krad(Si) Die N/A -50 to +125°C 5962F0150902V9A IS0-1845ASEH-Q ( Note 5) HDR to 300krad(Si), LDR to 50krad(Si) N/A IS0-1845ASRH/SAMPLE ( Notes 5, 6)N / A 5962F0150901VPC IS7-1845ASRH-Q HDR to 300krad(Si) 8 Ld SBDIP D8.3 5962F0150901QPC IS7-1845ASRH-8 5962F0150902VPC IS7-1845ASEH-Q HDR to 300krad(Si), LDR to 50krad(Si) N/A IS7-1845ASRH/PROTO ( Note 6)N / A 5962F0150901VXC IS9-1845ASRH-Q HDR to 300krad(Si) 18 Ld Flatpack K18.B 5962F0150901QXC IS9-1845ASRH-8 5962F0150902VXC IS9-1845ASEH-Q HDR to 300krad(Si), LDR to 50krad(Si) N/A IS9-1845ASRH/PROTO ( Note 6)N / A NOTES: 3. Specifications for Rad Hard QML devices are controlled by the Defense Logistics Agency Land and Maritime (DLA). The SMD numbers listed must be used when ordering. 4. These Pb-free Hermetic packaged products employ 100% Au plate - e4 termination finish, which is RoHS compliant and compatible with both SnPb and Pb-free soldering operations. 5. Die product tested at TA = + 25°C. The wafer probe test includes functional and parametric testing sufficient to make the die capable of meeting the electrical performance outlined in SMD. 6. The /PROTO and /SAMPLE parts are not rated or certified for Total Ionizing Dose (TID) or Single Event Effect (SEE) immunity. These parts are intended for engineering evaluation purposes only. The /PROTO parts meet the electrical limits and conditions across temperature specified in the DLA SMD and are in the same form and fit as the qualified device. The /SAMPLE parts are capable of meeting the electrical limits and conditions specified in the DLA SMD. The /SAMPLE parts do not receive 100% screening across temperature to the DLA SMD electrical limits. These part types do not come with a Certificate of Conformance because they are not DLA qualified devices. Typical Performance Curves FIGURE 1. OSCILLATO R FREQUENCY vs Rt and Ct FIGURE 2. MAXIMUM DUTY CYCLE vs R t

IS-1845ASRH, IS-1845ASEH FN9001 Rev.7.01 Page 3 of 4 Feb 16, 2022 Die Characteristics DIE DIMENSIONS 3090µm x 4080µm (121.6 mils x 159.0 mils) Thickness: 483µm ± 25.4µm (19 mils ± 1 mil) INTERFACE MATERIALS Glassivation Type: Phosphorus Silicon Glass (PSG) Thickness: 8.0kA ± 1.0kA Top Metallization Type: AlSiCu Thickness: 16.0kA ± 2kA Substrate Radiation Hardened Silicon Gate, Dielectric Isolation Backside Finish Silicon ASSEMBLY RELATED INFORMATION Substrate Potential Unbiased (DI) ADDITIONAL INFORMATION Worst Case Current Density <2.0 x 105 A/cm2 Transistor Count 582 Metallization Mask Layout IS-1845ASxH NOTES: 7. Both the GND pads must be bonded to ground. 8. The OUT double-sized bond pad must be double bonded for current sharing purposes. 9. The OSCGND double-sized bond pad must be double bonded to ground for current sharing purposes. VFB COMP VREF VC VCCOUT GND GND OSCGND RTCT ISENSE

IS-1845ASRH, IS-1845ASEH FN9001 Rev.7.01 Page 4 of 4 Feb 16, 2022

Revision History

The revision history provided is for informational purposes only and is believed to be accurate, but not warranted. Please visit our website to make sure you have the latest revision. DATE REVISION CHANGE Feb 16, 2022 7.01 Updated page 1 description. Updated Radiation Environment feature bullets. Updated Note 2. Updated ordering information table by adding Note 5, updating Note 6, adding Radiation Hardness information, and reformatting. Updated Figure 2. Nov 1, 2019 7.00 Added Related Literature Updated Links throughout. Updated Ordering information by updating temperature for die parts and adding applicable notes. Added Revision History. Updated Disclaimer.

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