IR062HD4C10U-P2 IRF | Alldatasheet

Document overview

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Technical content

Features

  • Output Power IGBT’s in half-bridge configuration
  • 575V rated breakdown voltage
  • High side gate drive designed for bootstrap operation
  • Matched propagation delay for both channels
  • Independent high and low side output channels (IR062HD4C10U-P2) or cross-conduction prevention logic (IR082HD4C10U-P2)
  • Undervoltage lockout
  • 3.3V, 5V and 15V input logic compatible
  • Metal heatsink back for improved PD

2 www.irf.com IR062HD4C10U-P2 IR082HD4C10U-P2 Typical Connections Please note this info sheet contains advance information which may change before the product is released to production. Please note this info sheet contains advance information which may change before the product is released to production. VIN COM H IN Vcc COM VO VIN V B TO LOAD HV DC Bus H IN L IN Vcc L IN IR062HD4C10U-P2 VIN COM H IN Vcc COM VO VIN V B TO LOAD HV DC Bus H IN L IN Vcc L IN IR082HD4C10U-P2

www.irf.com 3 IR062HD4C10U-P2 IR082HD4C10U-P2 Note 1: Logic operational for VO of -5 to 575V. Logic state held for VO of -5 to -VBO Recommended Operating Conditions The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the recommended conditions. Symbol Definition Min. Max. Units VB High side floating supply absolute voltage V O + 10 V O + 20 VIN High voltage supply — 575 VO Half-bridge output voltage (note 1) V IN VCC Low side and logic fixed supply voltage 10 20 VIH/VIL Logic input voltage (HIN & LIN) 0 V CC TA Ambient temperature -40 125 IC Continuous collector current (TC = 25 °C) — 2.0 V Absolute Maximum Ratings Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage param- eters are absolute voltages referenced to COM, all currents are defined positive into any lead. The Thermal Resistance and Power Dissipation ratings are measured under board mounted and still air conditions. Symbol Definition Min. Max. Units VIN High voltage supply - 0.3 575 VB High side floating supply absolute voltage VO -0.3 VO+ 25 VO Half-bridge output voltage -0.3 V IN+ 0.3 V VIH/VIL Logic input voltage (HIN & LIN) - 0.3 V cc + 0.3 VCC Low side and logic fixed supply voltage -0.3 25 V dV/dt Peak diode recovery dv/dt — 3.50 V/ns RthJA Thermal resistance, junction to ambient — 50 RthJc Thermal resistance, junction to case (metal) — 20 TJ Junction temperature -55 150 TS Storage temperature -55 150 TL Lead temperature (soldering, 10 seconds) — 300 V °C/W

VBIAS (VCC , VBS ) = 15V and TA = 25°C unless otherwise specified. The VIN and IIN parameters are referenced to COM. figure 2. Refer to IC data sheets (IR2106 and IR2108) for further characteristics. Note 2:Switching times as specified and illustrated in figure 2 are referenced to the VO output voltage. This is shown as VO in figure 2.

www.irf.com 5 IR062HD4C10U-P2 IR082HD4C10U-P2 Lead Assignments 1V cc

2 HIN

3 LIN

4 COM

9 VIN

VCC Logic and internal gate drive supply voltage. HIN Logic input for high side half bridge output, in phase LIN Logic input for low side half bridge output, in phase (IR062xxx) or out of phase (IR082xxx) VB High side gate drive floating supply VIN High voltage supply VO Half bridge output COM Logic return and half bridge return Functional Block Diagram IR2106 VINV B COM VO Vcc H IN L IN H O V S L O FRED06 FRED06 IGBT1 IGBT1 IR062H4C10U-P2 IR2108 VINV B COM VO Vcc H IN L IN H O V S L O FRED06 FRED06 IGBT1 IGBT1 IR082H4C10U-P2

6 www.irf.com IR062HD4C10U-P2 IR082HD4C10U-P2 Case Outline - 7 pin NOTES: 1. Dimensioning and tolerancing per ANSI Y14.5M-1982 2. Controlling dimension: Inch 3. Dimensions are shown in millimeters (inches) 16.89 (.665) 16.63 (.655) 3.18 (.125) 2.92 (.115) 5.08 (.100)

Figure 1. Input/Output Timing Diagram Figure 2. Switching Time Waveform Definitions