IR03H420 IRF | Alldatasheet

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Technical content

Features

/G6e Output Power MOSFETs in half-bridge configuration /G6e 500V Rated Breakdown Voltage /G6e High side gate drive designed for bootstrap operation /G6e Matched propagation delay for both channels /G6e Independent high and low side output channels /G6e Undervoltage lockout /G6e 5V Schmitt-triggered input logic /G6e Half-Bridge output in phase with HIN /G6e Cross conduction prevention logic /G6e Internally set dead time

Description

The IR03H420 is a high voltage, high speed half bridge. Proprietary HVIC and latch immune CMOS technologies, along with the HEXFET ® power MOSFET technology, enable ruggedized single package construction. The logic inputs are compatible with standard CMOS or LSTTL outputs. The front end features an independent high and low side driver in phase with the logic compatible input signals. The output features two HEXFETs in a half-bridge configuration with a high pulse current buffer stage designed for minimum cross-conduction in the half- bridge. Propagation delays for the high and low side power MOSFETs are matched to simplify use. The device can operate up to 500 volts. Product Summary VIN (max) 500V ton/off 130 ns trr 270 ns R DS (on) 3.0ΩΩ PD (TA = 25 ºC) 2.0W Package IR03H420 9506 Typical Connection TO LO AD I R03H 420 COM CC V V IN B V U P TO 500V D C BUS VO COM V IN CCV H INH IN L INL IN

Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM, all currents are defined positive into any lead. The Thermal Resistance and Power Dissipation ratings are measured under board mounted and still air conditions. Parameter Symbol Definition Min. Max. Units VIN High Voltage Supply -0.3 500 VB High Side Floating Supply Absolute Voltage -0.3 525 VO Half-Brid ge Output Voltage -0.3 V IN + 0.3 V VIH/VIL Logic Input Voltage (HIN & LIN) -0.3 V CC + 0.3 VCC Low Side and Logic Fixed Supply Voltage -0.3 25 dv/dt Peak Diode Recover y dv/dt --- 3.5 V/ns R θJA Thermal Resistance, Junction to Ambient --- 60 ºC/W TJ Junction Temperature -55 150 TS Storage Temperature -55 150 ºC TL Lead Temperature (Soldering, 10 seconds) --- 300 Recommended Operating Conditions The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the recommended conditions. Parameter Symbol Definition Min. Max. Units VB High Side Floating Supply Absolute Voltage VO + 10 VO + 20 VIN High Voltage Supply --- 500 V VO Half-Brid ge Output Voltage (note 1) 500 VCC Low Side and Logic Fixed Supply Voltage1 0 2 0 VIH/VIL Logic Input Voltage (HIN & LIN) 0V CC ID Continuous Drain Current (TA = 25ºC) --- 0.7 A TA Ambient Temperature -40 125 ºC Note 1: Logic operational for VO of -5 to 500 V. Logic state held for VO of -5 to - VB.

Dynamic Electrical Characteristics VBIAS (VCC , VB) = 15V and TA = 25ºC unless otherwise specified. Switching time waveform definitions are shown in figure 2. Parameter T A = 25ºC Symbol Definition Min. Typ. Max. Units Test Conditions ton Turn-On Propagation Delay (see note 2) --- 600 720 V S = 0 V toff Turn-Off Propagation Delay (see note 2) --- 90 200 V S = 500 V tr Turn-On Rise Time (see note 2) --- 80 120 ns tf Turn-Off Fall Time (see note 2) --- 40 70 MT Dela y Matching, HS & LS Turn-On/Off --- 30 --- DT Deadtime, LS Turn-Off to HS Turn-On & HS Turn-On to LS Turn-Off --- 500 750 trr Reverse Recovery Time (MOSFET Bod y Diode) --- 260 --- I F = 0.7 A Q rr Reverse Recovery Charge (MOSFET Bod y Diode) --- 0.7 --- µC di/dt = 100A/ µs Note 2: Switching times as specified and illustrated in figure 2 are referenced to the MOSFET gate input voltage. This is shown as HO in figure 2. Static Electrical Characteristics VBIAS (VCC , VB) = 15V and TA = 25ºC unless otherwise specified. The Input voltage and current levels are referenced to COM. Parameter T A = 25ºC Symbol Definition Min. Typ. Max. Units Test Conditions Su pply Characteristics VCCUV + VCC Supply Undervoltage Positive Going Threshold 8.8 9.3 9.8 V VCCUV - VCC Supply Undervoltage Negative Going Threshold 7.5 8.2 8.6 IQ CC Quiescent VCC Supply Current --- 140 240 IQ BS Quiescent VBS Supply Current --- 20 50 µA IOS Offset Supply Leakage Current --- --- 50 V B = VS = 500V Input Characteristics VIH Logic “1” Input Voltage 2.7 --- --- V V CC = 10V to 20V VIL Logic “0” Input Voltage --- --- 0.8 IIN+ Logic “1” Input Bias Current --- 20 40 µA IIN- Logic “0” Input Bias Current --- --- 1.0 µA Output Characteristics R DS (on) Static Drain-to-Source On-Resistance --- 3.0 --- Ω ID = 700mA VSD Diode Forward Voltage --- 0.8 --- V T j = 150 ºC

___ LIN Lead Definitions Lead Symbol Description VCC Logic and internal gate drive supply voltage. HIN Lo gic input for high side Half Bridge output, in phase LIN Lo gic input for low side Half Bridge output, out of phase VB High side gate drive floating supply. For bootstrap operation a high voltage fast recovery diode is needed to feed from VCC to VB. VIN High voltage supply. VO Half-Brid ge output. COM Lo gic and low side of Half-Bridge return. Lead Assignments VCC V0 VINHIN LIN COM VB 9764321

9 Lead SIP w/o Leads 5 & 8

WORLD HEADQUARTERS: 233 KANSAS ST., EL SEGUNDO, CA 90245 USA • (310)322-3331 • FAX (310)322-3332 • TELEX 472-0403 EUROPEAN HEADQUARTERS: HURST GREEN, OXTED, SURREY RH8 9BB, UK • (44)0883 713215 • FAX (944)0883 714234 • TELEX 95219 Sales Offices, Agents and Distributors in Major Cities Throughout the World. Data and specifications subject to change without notice. © 1996 International Rectifier Printed in U.S.A. 3-96