IR02H420 IRF | Alldatasheet

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Technical content

Features

n Output Power MOSFETs in half-bridge configuration n 500V Rated Breakdown Voltage n High side gate drive designed for bootstrap operation n Matched propagation delay for both channels n Independent high and low side output channels n Undervoltage lockout n 5V Schmitt-triggered input logic n Half-Bridge output out of phase with HIN

Description

The IR02H420 is a high voltage, high speed half bridge. Proprietary HVIC and latch immune CMOS technologies, along with the HEXFET® power MOSFET technology, enable ruggedized single package construction. The logic inputs are compatible with standard CMOS or LSTTL outputs. The front end features an independent high and low side driver in phase with the logic compatible input signals. The output features two HEXFETs in a half-bridge configuration with a high pulse current buffer stage designed for minimum cross-conduction in the half- bridge. Propagation delays for the high and low side power MOSFETs are matched to simplify use. The device can operate up to 500 volts. Product Summary VIN (max) 500V ton/off 130 ns trr 270 ns RDS(on) 3.0ΩΩ PD (TA = 25 ºC) 2.0W Package IR02H420 9506 Typical Connection T O L O A D I R 0 2 H 4 2 0 C O M C C V V I N B V U P T O 5 0 0 V D C B U S V O C O M V I N C C V H I N H I N L I N L I N

Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM, all currents are defined positive into any lead. The Thermal Resistance and Power Dissipation ratings are measured under board mounted and still air conditions. Parameter Symbol Definition Min. Max. Units VIN High Voltage Supply -0.3 500 VB High Side Floating Supply Absolute Voltage -0.3 525 VO Half-Bridge Output Voltage -0.3 VIN + 0.3 V VIH/VIL Logic Input Voltage (HIN & LIN) -0.3 VCC + 0.3 VCC Low Side and Logic Fixed Supply Voltage -0.3 dv/dt Peak Diode Recovery dv/dt --- 3.5 V/ns PD Package Power Dissipation @ TA ≤ +25ºC --- 2.00 W RθJA Thermal Resistance, Junction to Ambient --- ºC/W TJ Junction Temperature -55 150 TS Storage Temperature -55 150 ºC TL Lead Temperature (Soldering, 10 seconds) --- 300 Recommended Operating Conditions The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the recommended conditions. Parameter Symbol Definition Min. Max. Units VB High Side Floating Supply Absolute Voltage VO + 10 VO + 20 VIN High Voltage Supply --- 500 V VO Half-Bridge Output Voltage (note 1) 500 VCC Low Side and Logic Fixed Supply Voltage VIH/VIL Logic Input Voltage (HIN & LIN) VCC ID Continuous Drain Current (TA = 25ºC) --- 0.7 A (TA = 85ºC) --- 0.5 TA Ambient Temperature -40 125 ºC Note 1: Logic operational for VO of -5 to 500 V. Logic state held for VO of -5 to - VB.

Dynamic Electrical Characteristics VBIAS (VCC, VB) = 15V and TA = 25ºC unless otherwise specified. Switching time waveform definitions are shown in figure 2. Parameter TA = 25ºC Symbol Definition Min. Typ. Max. Units Test Conditions ton Turn-On Propagation Delay (see note 2) --- 130 200 VS = 0 V toff Turn-Off Propagation Delay (see note 2) --- 200 VS = 500 V tr Turn-On Rise Time (see note 2) --- 120 ns tf Turn-Off Fall Time (see note 2) --- MT Delay Matching, HS & LS Turn-On/Off --- --- trr Reverse Recovery Time (MOSFET Body Diode) --- 260 --- IF = 0.7 A Qrr Reverse Recovery Charge (MOSFET Body Diode) --- 0.7 --- µC di/dt = 100A/µs Note 2: Switching times as specified and illustrated in figure 2 are referenced to the MOSFET gate input voltage. This is shown as HO in figure 2. Static Electrical Characteristics VBIAS (VCC, VB) = 15V and TA = 25ºC unless otherwise specified. The Input voltage and current levels are referenced to COM. Parameter TA = 25ºC Symbol Definition Min. Typ. Max. Units Test Conditions Supply Characteristics VCCUV+ VCC Supply Undervoltage Positive Going Threshold 8.8 9.3 9.8 V VCCUV- VCC Supply Undervoltage Negative Going Threshold 7.5 8.2 8.6 IQCC Quiescent VCC Supply Current --- 140 240 IQBS Quiescent VBS Supply Current --- µA IOS Offset Supply Leakage Current --- --- VB = VS = 500V Input Characteristics VIH Logic “1” Input Voltage 2.7 --- --- V VCC = 10V to 20V VIL Logic “0” Input Voltage --- --- 0.8 IIN+ Logic “1” Input Bias Current --- µA IIN- Logic “0” Input Bias Current --- --- 1.0 µA Output Characteristics RDS(on) Static Drain-to-Source On-Resistance --- 3.0 --- Ω ID = 700mA VSD Diode Forward Voltage --- 0.8 --- V Tj = 150 ºC

___ HIN ___ LIN Lead Definitions Lead Symbol Logic and internal gate drive supply voltage. HIN Logic input for high side Half Bridge output, out of phase LIN Logic input for low side Half Bridge output, in phase VB High side gate drive floating supply. For bootstrap operation a high voltage fast recovery diode is needed to feed from VCC to VB. VIN High voltage supply. VO Half-Bridge output. COM Logic and low side of Half-Bridge return. Lead Assignments VCC VIN HIN LIN COM VB

9 Lead SIP w/o Leads 5 & 8

WORLD HEADQUARTERS: 233 KANSAS ST., EL SEGUNDO, CA 90245 USA • (310)322-3331 • FAX (310)322-3332 • TELEX 472-0403 EUROPEAN HEADQUARTERS: HURST GREEN, OXTED, SURREY RH8 9BB, UK • (44)0883 713215 • FAX (944)0883 714234 • TELEX 95219 Sales Offices, Agents and Distributors in Major Cities Throughout the World. Data and specifications subject to change without notice. © 1996 International Rectifier Printed in U.S.A. 3-96