IR01D214-P2

IR01HD214 IRF | Alldatasheet

Document overview

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Technical content

Features

• Output Power MOSFETs in half-bridge configuration
• 500V rated breakdown voltage
• High side gate drive designed for bootstrap operation
• Matched propagation delay for both channels
• Undervoltage lockout
• 5V Schmitt-triggered input logic
• Half-Bridge output in phase with HIN
• Heatsink version (P2) with improved PD

Description

The IR01H(D)xxx is a high voltage, high speed half bridge. Proprietary HVIC and latch immune CMOS technologies, along with the HEXFET power MOSFET technology, enable ruggedized single package construction. The logic inputs are compat- ible with standard CMOS or LSTTL outputs. The front end features an independent high and low side driver in phase with the logic compatible input signals. The output features two HEXFETs in a half- bridge configuration with a high pulse current buffer stage designed for minimum cross-conduction in the half bridge. Propagation delays for the high and low side power MOSFETs are matched to simplify use. HIGH VOLTAGE HALF BRIDGE Packages Product Summary 250V- 214/224 500V - 420 ton/off 130 & 90 ns trr 260 ns RDS(on) 2.0ΩΩΩΩΩ - H214 1.1ΩΩΩΩΩ - H224 3.0ΩΩΩΩΩ - H420 PD(TA = 25oC) 2.0W 4.0W - P2 VIN (max) HV DC Bus NOTE: D1 is not required for the HD type VIN COM HIN Vcc COM VO VIN VB TO LOAD HIN L IN Vcc L IN

IR01H(D)214 / IR01H(D)214-P2 IR01H(D)224 / IR01H(D)224-P2 IR01H(D)420 / IR01H(D)420-P2 Absolute Maximum Ratings Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage param- eters are absolute voltages referenced to COM, all currents are defined positive into any lead. The Thermal Resistance and Power Dissipation ratings are measured under board mounted and still air conditions. Symbol Definition Min. Max. Units VIN High Voltage Supply -0.3 250 420 -0.3 500 VB High Side Floating Supply Absolute Voltage -0.3 275 420 -0.3 525 VO Half-Bridge Output -0.3 VIN + 0.3 V VIH/VIL Logic Input Voltage (HIN & LIN) - 0.3 Vcc + 0.3 V VCC Low Side and Logic Fixed Supply Voltage -0.3 V dV/dt Peak Diode Recovery dv/dt 3.50 V/ns PD Package Power Dissipation @ TA ≤ +25oC W - P2 4.0 W RTHJA Thermal Resistance, Junction to Ambient °C/W - P2 oC/W RTHJC Thermal Resistance, Junction to Case (heatsink) - P2 °C/W TJ Junction Temperature -55 150 TS Storage Temperature -55 150 oC TL Lead Temperature (Soldering, 10 seconds) 300 W V

IR01H(D)214 / IR01H(D)214-P2 IR01H(D)224 / IR01H(D)224-P2 IR01H(D)420 / IR01H(D)420-P2 Recommended Operating Conditions The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the recommended conditions. Symbol Definition Min. Max. Units VB High Side Floating Supply Absolute Voltage VO + 10 VO + 20 V VIN High Voltage Supply 250 V 420 500 VO Half-Bridge Output Voltage (note 1) 250 V 420 500 VCC Low Side and Logic Fixed Supply Voltage V VIH/VIL Logic Input Voltage (HIN & LIN) VCC V TA Ambient Temperature -40 125 oC Id Continuous Drain Current (TA = 25oC) 214 0.85 A 214-P2 1.4 224 1.1 224-P2 1.9 420 0.7 420-P2 1.1 (TA = 85oC) 214 0.55 A 214-P2 0.9 224 0.7 224-P2 1.4 420 0.5 420-P2 0.8 (TC = 25oC) 214-P2 1.7 224-P2 2.3 420-P2 1.4 Note 1: Logic operational for VO of -5 to 250V (214/224) and 500V (420). Logic state held for V0 of -5 to -VB A V

IR01H(D)214 / IR01H(D)214-P2 IR01H(D)224 / IR01H(D)224-P2 IR01H(D)420 / IR01H(D)420-P2 Dynamic Electrical Characteristics VBIAS (VCC, VBS) = 15V and TA = 25°C unless otherwise specified. Switching time waveform definitions are shown in figure 2. Symbol Definition Min. Typ. Max. Units Test Conditions ton Turn-On Propagation Delay (see note 2) 130 200 Vs = 0V toff Turn-Off Propagation Delay (see note 2) 200 Vs = 500V tr Turn-On Rise Time (see note 2) 120 ns tf Turn-Off Fall Time (see note 2) MT Delay Matching, HS & LS Turn-On/Off trr Reverse Recovery Time (MOSFET Body Diode) 260 IF = 0.7A Qrr Reverse Recovery Charge (MOSFET Body Diode) 0.7 µC di/dt = 100 A/us Note 2: Switching times as specified and illustrated in figure 2 are referenced to the MOSFET gate input voltage. This is shown as HO in figure 2. Static Electrical Characteristics VBIAS (VCC, VB) = 15V and TA = 25°C unless otherwise specified. The Input voltage and current levels are referenced to COM. Symbol Definition Min. Typ. Max. Units Test Conditions VCCUV+ VCC Supply Undervoltage Positive Going 8.8 9.3 9.8 V Threshold VCCUV- VCC Supply Undervoltage Negative Going 7.5 8.2 8.6 V Threshold IQCC Quiescent VCC Supply Current 140 240 µA IQBS Quiescent VBS Supply Current µA Ios Offset Supply Leakage Current µA VB = VS = 500V VIH Logic “1” Input Voltage 2.7 V VCC = 10V to 20V VIL Logic “0” Input Voltage 0.8 V VCC = 10V to 20V IIN+ Logic “1” Input Bias Current IIN- Logic “0” Input Bias Current 1.0 Rds(on) Static Drain-to-Source On-Resistance 214 2.0 Ω Id=850mA/TJ=150 oC 224 1.1 Ω Id=1.1A/TJ=150 oC 420 3.0 Ω Id=700mA/TJ=150 oC VSD Diode Forward Voltage 0.8 V Id=700mA/TJ=150 oC 224 0.85 Id=1.1A/TJ=150 oC V V VCC = 10V to 20V µA

IR01H(D)214 / IR01H(D)214-P2 IR01H(D)224 / IR01H(D)224-P2 IR01H(D)420 / IR01H(D)420-P2 Functional Block Diagram Lead Assignments Lead Definitions Symbol Logic and internal gate drive supply voltage. HIN Logic input for high side Half Bridge output, in phase LIN Logic input for low side Half Bridge output, in phase VB High side gate drive floating supply High voltage supply VO Half Bridge output COM Logic and low side of Half Bridge return Vcc HIN LIN COM 6 VB 7 VO

9 VIN

NOTE: xxx = 214 or 224 or 420 D1 included in HD type only IR2101 VIN V B COM VO Vcc H IN L IN H O V S L O IRFCxxx IRFCxxx NOTE: xxx = 214 or 224 or 420

IR01H(D)214 / IR01H(D)214-P2 IR01H(D)224 / IR01H(D)224-P2 IR01H(D)420 / IR01H(D)420-P2 16.89 (.665) 16.63 (.655) 3.18 (.125) 2.92 (.115) WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T 3Z2, Tel: (905) 473 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. NOTES: 1. Dimensioning & Tolerancing per ANSI Y14.5M-1982 2. Controlling dimension: Inch 3. Dimensions are shown in millimeters (inches)