IPZA65R029 ISC | Alldatasheet
Document overview
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Technical content
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FEATURES
- ReducedSwitching Losses
- Ultra-fastBody Diode
- HigherSystem Efficiency
APPLICATIONS
- SwitchModePowerSupply (SMPS)
- UninterruptiblePowerSupply (UPS)
- SuitableforSoftSwitchingTopologies AbsoluteMaximumRatings(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-SourceVoltage 650 V VGS Gate-SourceVoltage-Continuous ±20 V ID DrainCurrent-Continuous@Tc=25℃ 69 A ID DrainCurrent-Continuous@Tc=100℃ 44 A IDM DrainCurrent-SinglePulse 304 A PD TotalDissipation@TC=25℃ 305 W TJ Max.OperatingJunctionTemperature 150 ℃ Tstg StorageTemperature -55~150 ℃ THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rthj-c ThermalResistance,JunctiontoCase 0.41 ℃/W
www.iscsemi.com 2 ELECTRICALCHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT V(BR)DSS Drain-SourceBreakdownVoltage VGS=0,ID=1mA 650 - - V IDSS ZeroGateVoltageDrainCurrent VDS=650V,VGS=0 - - 1 uA IGSS Gate-BodyLeakageCurrent VGS= ±20V,VDS=0 - - ±100 nA VGS(th) GateThresholdVoltage VDS=VGS,ID=1.8mA 3.5 - 4.5 V RDS(on) Drain-SourceOn-Resistance VGS=10V,ID=36A - - 29 mΩ VSD DiodeForwardVoltage ISD=36A,VGS=0V - 1.1 -- V PACKAGEDIMENSIONS(UNIT:mm): TO-247-4
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