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Document overview

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Technical content

Features

  • ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
  • Veryhighcommutationruggedness
  • Easytouse/drive
  • Pb-freeplating,Halogenfreemoldcompound
  • QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20 andJESD22)

Applications

PFCstages,hardswitchingPWMstagesandresonantswitchingPWM stagesfore.g.PCSilverbox,LCD&PDPTVandLighting. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj,max 550 V RDS(on),max 0.19 Ω ID 24.8 A Qg.typ 47.2 nC ID,pulse 63 A Eoss@400V 4.42 µJ Type/OrderingCode Package Marking RelatedLinks IPW50R190CE PG-TO 247 IPP50R190CE PG-TO 220 5R190CE see Appendix A

500VCoolMOSªCEPowerTransistor IPW50R190CE,IPP50R190CE Rev.2.2,2016-06-13Final Data Sheet TableofContents

500VCoolMOSªCEPowerTransistor IPW50R190CE,IPP50R190CE Rev.2.2,2016-06-13Final Data Sheet 1Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Continuous drain current1) ID 24.8

15.7 A TC = 25°C

TC = 100°C Pulsed drain current2) ID,pulse - - 63 A TC=25°C Avalanche energy, single pulse EAS - - 339 mJ ID =7.7A; VDD = 50V Avalanche energy, repetitive EAR - - 0.51 mJ ID =7.7A; VDD = 50V Avalanche current, repetitive IAR - - 7.7 A - MOSFET dv/dt ruggedness dv/dt - - 50 V/ns VDS=0...400V Gate source voltage VGS -20 -30

30 V static;

AC (f>1 Hz) Power dissipation (non FullPAK) TO-247, TO-220 Ptot - - 152 W TC=25°C Operating and storage temperature Tj,Tstg -55 - 150 °C - Mounting torque (non FullPAK) TO-247, TO-220 - - - 60 Ncm M3 and M3.5 screws Continuous diode forward current IS - - 17.6 A TC=25°C Diode pulse current2) IS,pulse - - 63.0 A TC = 25°C Reverse diode dv/dt3) dv/dt - - 15 V/ns VDS=0...400V,ISD<=IS,Tj=25°C, tcond<2µs Maximum diode commutation speed3) dif/dt - - 500 A/µs VDS=0...400V,ISD<=IS,Tj=25°C, tcond<2µs 2Thermalcharacteristics Table3Thermalcharacteristics(nonFullPAK)TO-247,TO-220 Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Thermal resistance, junction - case RthJC - - 0.82 °C/W - Thermal resistance, junction - ambient RthJA - - 62 °C/W leaded Soldering temperature, wavesoldering only allowed at leads Tsold - - 260 °C 1.6mm (0.063 in.) from case for 10s 1) Limited by Tj max <150°C, Maximum Duty Cycle D = 0.5 2) Pulse width tp limited by Tj,max 3)VDClink=400V;VDS,peak<V(BR)DSS;identicallowsideandhighsideswitchwithidenticalRG

500VCoolMOSªCEPowerTransistor IPW50R190CE,IPP50R190CE Rev.2.2,2016-06-13Final Data Sheet 3Electricalcharacteristics Table4Staticcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Drain-source breakdown voltage V(BR)DSS 500 - - V VGS=0V,ID=1mA Gate threshold voltage V(GS)th 2.50 3 3.50 V VDS=VGS,ID=0.51mA Zero gate voltage drain current IDSS - µA VDS=500V,VGS=0V,Tj=25°C VDS=500V,VGS=0V,Tj=150°C Gate-source leakage curent IGSS - - 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) 0.17 0.45 0.19 - Ω VGS=13V,ID=6.2A,Tj=25°C VGS=13V,ID=6.2A,Tj=150°C Gate resistance RG - 3 - Ω f=1MHz,opendrain Table5Dynamiccharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Input capacitance Ciss - 1137 - pF VGS=0V,VDS=100V,f=1MHz Output capacitance Coss - 68 - pF VGS=0V,VDS=100V,f=1MHz Effective output capacitance, energy related1) Co(er) - 56 - pF VGS=0V,VDS=0...400V Effective output capacitance, time related2) Co(tr) - 251 - pF ID=constant,VGS=0V,VDS=0...400V Turn-on delay time td(on) - 9.5 - ns VDD=400V,VGS=13V,ID=7.7A, RG=3.4Ω Rise time tr - 8.5 - ns VDD=400V,VGS=13V,ID=7.7A, RG=3.4Ω Turn-off delay time td(off) - 54 - ns VDD=400V,VGS=13V,ID=7.7A, RG=3.4Ω Fall time tf - 7.5 - ns VDD=400V,VGS=13V,ID=7.7A, RG=3.4Ω Table6Gatechargecharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Gate to source charge Qgs - 6.1 - nC VDD=400V,ID=7.7A,VGS=0to10V Gate to drain charge Qgd - 24.5 - nC VDD=400V,ID=7.7A,VGS=0to10V Gate charge total Qg - 47.2 - nC VDD=400V,ID=7.7A,VGS=0to10V Gate plateau voltage Vplateau - 5.4 - V VDD=400V,ID=7.7A,VGS=0to10V 1)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to80%V(BR)DSS 2)Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to80%V(BR)DSS

500VCoolMOSªCEPowerTransistor IPW50R190CE,IPP50R190CE Rev.2.2,2016-06-13Final Data Sheet Table7Reversediodecharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Diode forward voltage VSD - 0.85 - V VGS=0V,IF=7.7A,Tf=25°C Reverse recovery time trr - 280 - ns VR=400V,IF=7.7A,diF/dt=100A/µs Reverse recovery charge Qrr - 3.2 - µC VR=400V,IF=7.7A,diF/dt=100A/µs Peak reverse recovery current Irrm - 21.5 - A VR=400V,IF=7.7A,diF/dt=100A/µs

500VCoolMOSªCEPowerTransistor IPW50R190CE,IPP50R190CE Rev.2.2,2016-06-13Final Data Sheet 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation TC[°C] Ptot[W] 120 160 100 110 120 130 140 150 160 Ptot=f(TC) Diagram2:Safeoperatingarea VDS[V] ID[A] 100 101 102 103 10-2 10-1 100 101 102 1 µs 10 µs 100 µs 1 ms 10 ms DC ID=f(VDS);TC=25°C;D=0;parameter:tp Diagram3:Safeoperatingarea VDS[V] ID[A] 100 101 102 103 10-2 10-1 100 101 102 1 µs 10 µs 100 µs 1 ms 10 ms DC ID=f(VDS);TC=80°C;D=0;parameter:tp Diagram4:Max.transientthermalimpedance tp[s] ZthJC[K/W] 10-5 10-4 10-3 10-2 10-1 10-2 10-1 100 101 0.5 0.2 0.1 0.05 0.02 0.01 single pulse ZthJC=f(tP);parameter:D=tp/T

500VCoolMOSªCEPowerTransistor IPW50R190CE,IPP50R190CE Rev.2.2,2016-06-13Final Data Sheet Typ.outputcharacteristicsTj=25°C VDS[V] ID[A] 20 V 10 V 8 V 7 V 6 V 5.5 V 5 V 4.5 V ID=f(VDS);Tj=25°C;parameter:VGS Typ.outputcharacteristicsTj=125°C VDS[V] ID[A] 20 V 10 V 8 V 7 V 6 V 5.5 V 5 V 4.5 V ID=f(VDS);Tj=125°C;parameter:VGS Typ.drain-sourceon-stateresistance ID[A] RDS(on)[Ω ] 0.2 0.3 0.4 0.5 0.6 0.7 0.8 5 V 5.5 V 6 V 6.5 V 7 V 10 V RDS(on)=f(ID);Tj=125°C;parameter:VGS Drain-sourceon-stateresistance Tj[°C] RDS(on)[Ω ] -50 -25 100 125 150 175 0.0 0.1 0.2 0.3 0.4 0.5 0.6 98% typ RDS(on)=f(Tj);ID=6.2A;VGS=13V

500VCoolMOSªCEPowerTransistor IPW50R190CE,IPP50R190CE Rev.2.2,2016-06-13Final Data Sheet Typ.transfercharacteristics VGS[V] ID[A] 150 °C 25 °C ID=f(VGS);VDS=20V;parameter:Tj Typ.gatecharge Qgate[nC] VGS[V] 400 V 120 V VGS=f(Qgate);ID=7.7Apulsed;parameter:VDD Avalancheenergy Tj[°C] EAS[mJ] 100 125 150 175 100 120 140 160 180 200 220 240 260 280 300 320 340 360 EAS=f(Tj);ID=7.7A;VDD=50V Drain-sourcebreakdownvoltage Tj[°C] VBR(DSS)[V] -60 -20 100 140 180 440 460 480 500 520 540 560 580 VBR(DSS)=f(Tj);ID=1mA

500VCoolMOSªCEPowerTransistor IPW50R190CE,IPP50R190CE Rev.2.2,2016-06-13Final Data Sheet Typ.capacitances VDS[V] C[pF] 100 200 300 400 500 100 101 102 103 104 Ciss Coss Crss C=f(VDS);VGS=0V;f=1MHz Typ.Cossstoredenergy VDS[V] Eoss[µJ] 100 200 300 400 500 Eoss=f(VDS) Forwardcharacteristicsofreversediode VSD[V] IF[A] 0.4 0.6 0.8 1.0 1.2 1.4 10-1 100 101 102 125 °C 25 °C IF=f(VSD);parameter:Tj

500VCoolMOSªCEPowerTransistor IPW50R190CE,IPP50R190CE Rev.2.2,2016-06-13Final Data Sheet 5TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform t V ,I Irrm IF VDS 10 %Irrm trr tF tS QF QS dIF / dt dIrr / dt VDS(peak) Qrr = QF +QS trr =tF +tS VDS IF VDS IF Rg1 Rg 2 Rg1 = Rg 2 Table9Switchingtimes Switching times test circuit for inductive load Switching times waveform VDS VGS td(on) td(off)tr ton tf toff 10% 90% VDS VGS Table10Unclampedinductiveload Unclamped inductive load test circuit Unclamped inductive waveform VDS V(BR)DS ID VDS VDSID

500VCoolMOSªCEPowerTransistor IPW50R190CE,IPP50R190CE Rev.2.2,2016-06-13Final Data Sheet 6PackageOutlines Figure1OutlinePG-TO247,dimensionsinmm/inches

500VCoolMOSªCEPowerTransistor IPW50R190CE,IPP50R190CE Rev.2.2,2016-06-13Final Data Sheet Figure2OutlinePG-TO220,dimensionsinmm/inches

500VCoolMOSªCEPowerTransistor IPW50R190CE,IPP50R190CE Rev.2.2,2016-06-13Final Data Sheet 7AppendixA Table11RelatedLinks

  • IFXCoolMOSWebpage:www.infineon.com
  • IFXDesigntools:www.infineon.com

500VCoolMOSªCEPowerTransistor IPW50R190CE,IPP50R190CE Rev.2.2,2016-06-13Final Data Sheet RevisionHistory IPW50R190CE, IPP50R190CE Revision:2016-06-13,Rev.2.2 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2012-08-24 Release of final version 2.1 2015-08-20 removal of TO-220FP 2.2 2016-06-13 Updated ID ratings, Zth, SOA and Power dissipation curves TrademarksofInfineonTechnologiesAG AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™, EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™, ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™, PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™, SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™. TrademarksupdatedAugust2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2016InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.