IPW65R095C7 ISC | Alldatasheet
Document overview
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Technical content
www.iscsemi.com 1
FEATURES
- DrainCurrent-ID=24A@TC=25℃
- DrainSource Voltage-VDSS=650V(Min)
- Static Drain-Source On-Resistance -RDS(on) =95mΩ(Max)@VGS=10V
APPLICATIONS
- FastSwitching AbsoluteMaximumRatings(TC=25℃) THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(j-c) Channel-to-casethermalresistance 0.98 ℃/W Rth(j-a) Channel-to-ambientthermalresistance 62 ℃/W SYMBOL PARAMETER VALUE UNIT VDSS Drain-SourceVoltage 650 V VGS Gate-SourceVoltage ±20 V ID DrainCurrent-Continuous 24 A IDM DrainCurrent-SinglePulsed 100 A PD TotalDissipation@TC=25℃ 128 W Tj Max.OperatingJunctionTemperature 150 ℃ Tstg StorageTemperature -55~150 ℃
www.iscsemi.com 2 ELECTRICALCHARACTERISTICS (TJ=25℃) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-SourceBreakdownVoltage VGS=0V;ID=1mA 650 -- -- V VGS(th) GateThresholdVoltage VDS=VGS;ID=0.59mA 3 -- 4 V RDS(on) Drain-SourceOn-Resistance VGS=10V;ID=11.8A -- -- 95 mΩ IGSS Gate-SourceLeakageCurrent VGS=20V;VDS=0V -- -- 0.1 mA IDSS Drain-SourceLeakageCurrent VDS=650V;VGS=0V -- -- 1 μA VSD Diodeforwardvoltage IF=11.8A,VGS =0V -- 0.9 -- V PRODUCTDISCLAIMER ISCreserves the rights tomakechangesof thecontent hereinthe datasheetatany timewithout notification.The informationcontained hereinis presentedonly as aguidefortheapplications ofour products. ISCproducts are intendedforusagein generalelectronic equipment.Theproducts are notdesigned for usein equipmentwhichrequire specialized qualityand/or reliability,orin equipment whichcould have applications inhazardous environments,aerospaceindustry,or medicalfield.Pleasecontactusif you intend ourproducts tobe used inthese specialapplications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifically disclaimsany and allliability,includingwithout limitation special,consequential orincidental damages. Itis strictlyprohibitedto reprintorcopy partorallof thisdatasheetwithoutpermission fromISC.