IPW60R299CP ISC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
iscwebsite：www.iscsemi.cn isc&iscsemiisregisteredtrademark1 iscN-ChannelMOSFETTransistor IPW60R299CP IIPW60R299CP
- FEATURES
- Staticdrain-source on-resistance: RDS(on)≤299mΩ
- Enhancementmode:
- 100% avalanchetested
- MinimumLot-to-Lotvariations forrobustdevice performanceandreliable operation
- DESCRITION
- Highpeak current capability
- ABSOLUTEMAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-SourceVoltage 600 V VGS Gate-SourceVoltage ±20 V ID DrainCurrent-Continuous 11 A IDM DrainCurrent-SinglePulsed 34 A PD TotalDissipation@TC=25℃ 96 W Tj Max.OperatingJunctionTemperature 150 ℃ Tstg StorageTemperature -55~150 ℃
- THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(j-c) Channel-to-casethermalresistance 1.3 ℃/W Rth(j-a) Channel-to-ambientthermalresistance 62 ℃/W
iscwebsite：www.iscsemi.cn isc&iscsemiisregisteredtrademark2 iscN-ChannelMOSFETTransistor IPW60R299CP IIPW60R299CP ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-SourceBreakdownVoltage VGS=0V;ID=0.25mA 600 V VGS(th) GateThresholdVoltage VDS=VGS;ID=0.44mA 2.5 3.5 V RDS(on) Drain-SourceOn-Resistance VGS=10V;ID=6.6A 299 mΩ IGSS Gate-SourceLeakageCurrent VGS=20V;VDS=0V 0.1 mA IDSS Drain-SourceLeakageCurrent VDS=600V;VGS=0V 1 μA VSD Diodeforwardvoltage IF=6.6A,VGS =0V 1.2 V