IPW60R190E6 ISC | Alldatasheet
Document overview
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- PDF pages: 2
Technical content
iscwebsite：www.iscsemi.cn isc&iscsemiisregisteredtrademark1 iscN-ChannelMOSFETTransistor IPW60R190E6 IIPW60R190E6
- FEATURES
- Staticdrain-source on-resistance: RDS(on)≤190mΩ
- Enhancementmode:
- 100% avalanchetested
- MinimumLot-to-Lotvariations forrobustdevice performanceandreliable operation
- DESCRITION
- Fastswitching
- ABSOLUTEMAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-SourceVoltage 600 V VGS Gate-SourceVoltage ±20 V ID DrainCurrent-Continuous 20.2 A IDM DrainCurrent-SinglePulsed 59 A PD TotalDissipation@TC=25℃ 151 W Tj Max.OperatingJunctionTemperature 150 ℃ Tstg StorageTemperature -55~150 ℃
- THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(j-c) Channel-to-casethermalresistance 0.83 ℃/W Rth(j-a) Channel-to-ambientthermalresistance 62 ℃/W
iscwebsite：www.iscsemi.cn isc&iscsemiisregisteredtrademark2 iscN-ChannelMOSFETTransistor IPW60R190E6 IIPW60R190E6 ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-SourceBreakdownVoltage VGS=0V;ID=1mA 600 V VGS(th) GateThresholdVoltage VDS=VGS;ID=0.63mA 2.5 3.5 V RDS(on) Drain-SourceOn-Resistance VGS=10V;ID=9.5A 190 mΩ IGSS Gate-SourceLeakageCurrent VGS=20V;VDS=0V 0.1 μA IDSS Drain-SourceLeakageCurrent VDS=600V;VGS=0V 1 μA VSD Diodeforwardvoltage IF=9.5A,VGS =0V V