IPW50R280CE ISC | Alldatasheet
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Technical content
iscN-ChannelMOSFETTransistor IPW50R280CE www.iscsemi.com 1
FEATURES
- DrainCurrent-ID=18.1A@TC=25℃
- DrainSource Voltage-VDSS=500V(Min)
- Static Drain-Source On-Resistance -RDS(on) =0.28Ω(Max)@VGS=13V
DESCRIPTION
- PFCStages,Hard Switching PWMStagesAnd Resonant SwitchingPWM ABSOLUTE MAXIMUM RATINGS(Ta=25℃) THERMALCHARACTERISTICS SYMBOL PARAMETER VALUE UNIT VDSS Drain-SourceVoltage 500 V VGS Gate-SourceVoltage-Continuous ±20 V ID DrainCurrent-Continuous 18.1 A IDM DrainCurrent-SinglePulse 42.9 A PD TotalDissipation 119 W TJ Max. OperatingJunctionTemperature 150 ℃ Tstg StorageTemperature -55~150 ℃ SYMBOL PARAMETER MAX UNIT Rthj-c ThermalResistance,JunctiontoCase 1.05 ℃/W
iscN-ChannelMOSFETTransistor IPW50R280CE www.iscsemi.com 2 ELECTRICALCHARACTERISTICS（TC=25℃ unless otherwisespecified） SYMBOL PARAMETER CONDITIONS MIN MAX UNIT V(BR)DSS Drain-SourceBreakdownVoltage VGS=0V;ID=1mA 500 -- V IDSS ZeroGateVoltageDrainCurrent VDS=500V;VGS=0V -- 1.0 uA IGSS Gate-BodyLeakageCurrent VGS= ±20V;VDS=0V -- ±100 nA VGS(th) GateThresholdVoltage VDS=VGS;ID=0.35mA 2.5 3.5 V RDS(on) Drain-SourceOn-Resistance VGS=13V;ID=4.2A -- 0.28 Ω VSD ForwardOn-Voltage IS=5.2A;VGS=0V -- 1.2 V PRODUCTDISCLAIMER ISCreserves the rights tomakechangesof thecontent hereinthe datasheetatany timewithout notification.The informationcontained hereinis presentedonly as aguidefortheapplications ofour products. ISCproducts are intendedforusagein generalelectronic equipment.Theproducts are notdesigned for usein equipmentwhichrequire specialized qualityand/or reliability,orin equipment whichcould have applications inhazardous environments,aerospaceindustry,or medicalfield.Pleasecontactusif you intend ourproducts tobe used inthese specialapplications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifically disclaimsany and allliability,includingwithout limitation special,consequential orincidental damages. Itis strictlyprohibitedto reprintorcopy partorallof thisdatasheetwithoutpermission fromISC.