IPU80R1K0CE ISC | Alldatasheet
Document overview
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- PDF pages: 2
Technical content
iscwebsite：www.iscsemi.cn isc & iscsemi isregisteredtrademark1 iscN-ChannelMOSFETTransistor IPU80R1K0CE
- FEATURES
- WithTO-251(IPAK)packaging
- Highspeed switching
- Easytouse
- 100% avalanchetested
- MinimumLot-to-Lotvariations forrobustdevice performanceandreliable operation
- APPLICATIONS
- Powersupply
- DC-DCconverters
- Motorcontrol
- Switching applications
- ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-SourceVoltage 800 V VGSS Gate-SourceVoltage ±30 V ID DrainCurrent-Continuous 5.7 A IDM DrainCurrent-SinglePulsed 18 A PD TotalDissipation 83 W Tj OperatingJunctionTemperature -55~150 ℃ Tstg StorageTemperature -55~150 ℃
- THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-casethermalresistance 1.5 ℃/W Rth(ch-a) Channel-to-ambientthermalresistance 62 ℃/W
iscwebsite：www.iscsemi.cn isc & iscsemi isregisteredtrademark2 iscN-ChannelMOSFETTransistor IPU80R1K0CE ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-SourceBreakdownVoltage VGS=0V;ID=1.0mA 800 V VGS(th) GateThresholdVoltage VDS=VGS;ID=0.25mA 2.1 3.9 V RDS(on) Drain-SourceOn-Resistance VGS=10V;ID=1A 0.8 0.95 Ω IGSS Gate-SourceLeakageCurrent VGS= ±20V;VDS=0V ±0.1 μA IDSS Drain-SourceLeakageCurrent VDS=800V;VGS=0V;Tj=25℃ VDS=800V;VGS=0V;Tj=150℃ 250 μA VSDF Diodeforwardvoltage ISD=5.7A,VGS =0V 1.2 V