IPD50R1K4CE INFINEON | Alldatasheet

Document overview

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Technical content

Features

  • ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
  • Veryhighcommutationruggedness
  • Easytouse/drive
  • Pb-freeplating,Halogenfreemoldcompound
  • Qualifiedforstandardgradeapplications

Applications

PFCstages,hardswitchingPWMstagesandresonantswitchingstages fore.g.PCSilverbox,Adapter,LCD&PDPTVandindoorlighting. Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj,max 550 V RDS(on),max 1.4 Ω ID 4.8 A Qg.typ 8.2 nC ID,pulse 8.8 A Eoss@400V 0.79 µJ Type/OrderingCode Package Marking RelatedLinks IPD50R1K4CE PG-TO 252 IPU50R1K4CE PG-TO 251 50S1K4CE see Appendix A

500VCoolMOSªCEPowerTransistor IPD50R1K4CE,IPU50R1K4CE Rev.2.4,2016-06-13Final Data Sheet TableofContents

500VCoolMOSªCEPowerTransistor IPD50R1K4CE,IPU50R1K4CE Rev.2.4,2016-06-13Final Data Sheet 1Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Continuous drain current1) ID 4.8

3.1 A TC = 25°C

TC = 100°C Pulsed drain current2) ID,pulse - - 8.8 A TC=25°C Avalanche energy, single pulse EAS - - 49 mJ ID =1.1A; VDD = 50V Avalanche energy, repetitive EAR - - 0.07 mJ ID =1.1A; VDD = 50V Avalanche current, repetitive IAR - - 1.1 A - MOSFET dv/dt ruggedness dv/dt - - 50 V/ns VDS=0...400V Gate source voltage VGS -20 -30

30 V static;

AC (f>1 Hz) Power dissipation (non FullPAK) TO-252, TO-251 Ptot - - 42 W TC=25°C Operating and storage temperature Tj,Tstg -55 - 150 °C - Continuous diode forward current IS - - 3.4 A TC=25°C Diode pulse current2) IS,pulse - - 8.8 A TC = 25°C Reverse diode dv/dt3) dv/dt - - 15 V/ns VDS=0...400V,ISD<=IS,Tj=25°C, tcond<2µs Maximum diode commutation speed3) dif/dt - - 500 A/µs VDS=0...400V,ISD<=IS,Tj=25°C, tcond<2µs 2Thermalcharacteristics Table3ThermalcharacteristicsDPAK,IPAK Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Thermal resistance, junction - case RthJC - - 2.95 °C/W - Thermal resistance, junction - ambient4)RthJA - °C/W SMD version, device on PCB, minimal footprint SMD version, device on PCB, 6cm2 cooling area4) Soldering temperature, wave- & reflowsoldering allowed Tsold - - 260 °C reflow MSL 1 1) Limited by Tj max. Maximum duty cycle D=0.5 2) Pulse width tp limited by Tj,max 3)VDClink=400V;VDS,peak<V(BR)DSS;identicallowsideandhighsideswitchwithidenticalRG 4) Device on 40mm*40mm*1.5mm one layer epoxy PCB FR4 with 6cm2 copper area (thickness 70µm) for drain connection. PCB is vertical without air stream cooling.

500VCoolMOSªCEPowerTransistor IPD50R1K4CE,IPU50R1K4CE Rev.2.4,2016-06-13Final Data Sheet 3Electricalcharacteristics Table4Staticcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Drain-source breakdown voltage V(BR)DSS 500 - - V VGS=0V,ID=1mA Gate threshold voltage V(GS)th 2.50 3 3.50 V VDS=VGS,ID=0.07mA Zero gate voltage drain current IDSS - µA VDS=500V,VGS=0V,Tj=25°C VDS=500V,VGS=0V,Tj=150°C Gate-source leakage curent IGSS - - 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) 1.26 3.28 1.40 - Ω VGS=13V,ID=0.9A,Tj=25°C VGS=13V,ID=0.9A,Tj=150°C Gate resistance RG - 7 - Ω f=1MHz,opendrain Table5Dynamiccharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Input capacitance Ciss - 178 - pF VGS=0V,VDS=100V,f=1MHz Output capacitance Coss - 11 - pF VGS=0V,VDS=100V,f=1MHz Effective output capacitance, energy related1) Co(er) - 10 - pF VGS=0V,VDS=0...400V Effective output capacitance, time related2) Co(tr) - 36 - pF ID=constant,VGS=0V,VDS=0...400V Turn-on delay time td(on) - 6.5 - ns VDD=400V,VGS=13V,ID=1.1A, RG=5.3Ω Rise time tr - 6 - ns VDD=400V,VGS=13V,ID=1.1A, RG=5.3Ω Turn-off delay time td(off) - 23 - ns VDD=400V,VGS=13V,ID=1.1A, RG=5.3Ω Fall time tf - 30 - ns VDD=400V,VGS=13V,ID=1.1A, RG=5.3Ω Table6Gatechargecharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Gate to source charge Qgs - 1 - nC VDD=400V,ID=1.1A,VGS=0to10V Gate to drain charge Qgd - 4.6 - nC VDD=400V,ID=1.1A,VGS=0to10V Gate charge total Qg - 8.2 - nC VDD=400V,ID=1.1A,VGS=0to10V Gate plateau voltage Vplateau - 5.4 - V VDD=400V,ID=1.1A,VGS=0to10V 1)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to80%V(BR)DSS 2)Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to80%V(BR)DSS

500VCoolMOSªCEPowerTransistor IPD50R1K4CE,IPU50R1K4CE Rev.2.4,2016-06-13Final Data Sheet Table7Reversediodecharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Diode forward voltage VSD - 0.83 - V VGS=0V,IF=1.1A,Tf=25°C Reverse recovery time trr - 120 - ns VR=400V,IF=1.1A,diF/dt=100A/µs Reverse recovery charge Qrr - 0.5 - µC VR=400V,IF=1.1A,diF/dt=100A/µs Peak reverse recovery current Irrm - 6.8 - A VR=400V,IF=1.1A,diF/dt=100A/µs

500VCoolMOSªCEPowerTransistor IPD50R1K4CE,IPU50R1K4CE Rev.2.4,2016-06-13Final Data Sheet 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation TC[°C] Ptot[W] 120 160 Ptot=f(TC) Diagram2:Safeoperatingarea VDS[V] ID[A] 100 101 102 103 10-2 10-1 100 101 102 1 µs 10 µs 100 µs 1 ms 10 ms DC ID=f(VDS);TC=25°C;D=0;parameter:tp Diagram3:Safeoperatingarea VDS[V] ID[A] 100 101 102 103 10-2 10-1 100 101 102 1 µs 10 µs 100 µs 1 ms 10 ms DC ID=f(VDS);TC=80°C;D=0;parameter:tp Diagram4:Max.transientthermalimpedance tp[s] ZthJC[K/W] 10-5 10-4 10-3 10-2 10-1 10-2 10-1 100 101 0.5 0.2 0.1 0.05 0.02 0.01 single pulse ZthJC=f(tP);parameter:D=tp/T

500VCoolMOSªCEPowerTransistor IPD50R1K4CE,IPU50R1K4CE Rev.2.4,2016-06-13Final Data Sheet Diagram5:Typ.outputcharacteristicsTj=25°C VDS[V] ID[A] 20 V 10 V 8 V 7 V 6 V 5.5 V 5 V 4.5 V ID=f(VDS);Tj=25°C;parameter:VGS Diagram6:Typ.outputcharacteristicsTj=125°C VDS[V] ID[A] 20 V 10 V 8 V 7 V 6 V 5.5 V 5 V 4.5 V ID=f(VDS);Tj=125°C;parameter:VGS Diagram7:Typ.drain-sourceon-stateresistance ID[A] RDS(on)[Ω ] 2.20 2.40 2.60 2.80 3.00 3.20 3.40 3.60 3.80 4.00 4.20 4.40 4.60 4.80 5.00 5 V 5.5 V 6 V 6.5 V 7 V 10 V RDS(on)=f(ID);Tj=125°C;parameter:VGS Diagram8:Drain-sourceon-stateresistance Tj[°C] RDS(on)[Ω ] -50 -25 100 125 150 175 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 98% typ RDS(on)=f(Tj);ID=0.9A;VGS=13V

500VCoolMOSªCEPowerTransistor IPD50R1K4CE,IPU50R1K4CE Rev.2.4,2016-06-13Final Data Sheet Diagram9:Typ.transfercharacteristics VGS[V] ID[A] 150 °C 25 °C ID=f(VGS);VDS=20V;parameter:Tj Diagram10:Typ.gatecharge Qgate[nC] VGS[V] 120 V 400 V VGS=f(Qgate);ID=1.1Apulsed;parameter:VDD Diagram11:Avalancheenergy Tj[°C] EAS[mJ] 100 125 150 175 EAS=f(Tj);ID=1.1A;VDD=50V Diagram12:Drain-sourcebreakdownvoltage Tj[°C] VBR(DSS)[V] -60 -20 100 140 180 440 460 480 500 520 540 560 580 VBR(DSS)=f(Tj);ID=1mA

500VCoolMOSªCEPowerTransistor IPD50R1K4CE,IPU50R1K4CE Rev.2.4,2016-06-13Final Data Sheet Diagram13:Typ.capacitances VDS[V] C[pF] 100 200 300 400 500 100 101 102 103 104 Ciss Coss Crss C=f(VDS);VGS=0V;f=1MHz Diagram14:Typ.Cossstoredenergy VDS[V] Eoss[µJ] 100 200 300 400 500 0.0 0.2 0.4 0.6 0.8 1.0 1.2 Eoss=f(VDS) Diagram15:Forwardcharacteristicsofreversediode VSD[V] IF[A] 0.4 0.6 0.8 1.0 1.2 1.4 10-1 100 101 125 °C 25 °C IF=f(VSD);parameter:Tj

500VCoolMOSªCEPowerTransistor IPD50R1K4CE,IPU50R1K4CE Rev.2.4,2016-06-13Final Data Sheet 5TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform t V ,I Irrm IF VDS 10 %Irrm trr tF tS QF QS dIF / dt dIrr / dt VDS(peak) Qrr = QF +QS trr =tF +tS VDS IF VDS IF Rg1 Rg 2 Rg1 = Rg 2 Table9Switchingtimes Switching times test circuit for inductive load Switching times waveform VDS VGS td(on) td(off)tr ton tf toff 10% 90% VDS VGS Table10Unclampedinductiveload Unclamped inductive load test circuit Unclamped inductive waveform VDS V(BR)DS ID VDS VDSID

500VCoolMOSªCEPowerTransistor IPD50R1K4CE,IPU50R1K4CE Rev.2.4,2016-06-13Final Data Sheet 6PackageOutlines 2.0 ISSUE DATE EUROPEAN PROJECTION0 4mm2.0SCALE0 REVISION01-09-201505 DOCUMENT NO.Z8B00003328 *) mold flash not includedMILLIMETERS 4.57 (BSC)2.29 (BSC) D NHE1e1eED1 L31.180.510.90 5.02 9.40 6.404.705.97 b3ADIMb2cbc2 A15.00 0.00 0.0460.0200.035 0.1980.2520.1850.235 0.3701.701.00 5.605.846.226.73 0.220 0.039 0.2300.265 0.049 0.245 0.413 0.0005.50 INCHESMIN 0.217 L Figure1OutlinePG-TO252,dimensionsinmm/inches

500VCoolMOSªCEPowerTransistor IPD50R1K4CE,IPU50R1K4CE Rev.2.4,2016-06-13Final Data Sheet MILLIMETERSA1b4b2bADIM D1EE1c2D e1e MIN 0.46 0.0350.0250.085 MAX 0.60 INCHES 0.1800.090 MIN0.0450.035MAX0.095 2.0EUROPEAN PROJECTION ISSUE DATE SCALE0 4mm 02.0 REVISION31-08-201504 DOCUMENT NO.Z8B00003330 0.85 0.0332.29 0.090L1 Figure2OutlinePG-TO251,dimensionsinmm/inches

500VCoolMOSªCEPowerTransistor IPD50R1K4CE,IPU50R1K4CE Rev.2.4,2016-06-13Final Data Sheet 7AppendixA Table11RelatedLinks

  • IFXCoolMOSWebpage:www.infineon.com
  • IFXDesigntools:www.infineon.com

500VCoolMOSªCEPowerTransistor IPD50R1K4CE,IPU50R1K4CE Rev.2.4,2016-06-13Final Data Sheet RevisionHistory IPD50R1K4CE, IPU50R1K4CE Revision:2016-06-13,Rev.2.4 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2012-09-13 Release of final version 2.1 2012-12-05 release of final datasheet 2.2 2013-07-16 update to Halogen free mold compound 2.3 2015-11-17 Updated to standard grade qualified & updated package drawing 2.4 2016-06-13 Updated ID ratings, Zth, SOA and Pd curves TrademarksofInfineonTechnologiesAG AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™, EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™, ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™, PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™, SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™. TrademarksupdatedAugust2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2016InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.