IPU060N03L ISC | Alldatasheet
Document overview
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- PDF pages: 2
Technical content
iscwebsite：www.iscsemi.cn isc & iscsemi isregisteredtrademark1 iscN-ChannelMOSFETTransistor IPU060N03L
- FEATURES
- WithTO-251(IPAK)packaging
- Highspeed switching
- Easytouse
- 100% avalanchetested
- MinimumLot-to-Lotvariations forrobustdevice performanceandreliable operation
- APPLICATIONS
- Powersupply
- DC-DCconverters
- Motorcontrol
- Switching applications
- ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-SourceVoltage 30 V VGSS Gate-SourceVoltage ±20 V ID DrainCurrent-Continuous 50 A IDM DrainCurrent-SinglePulsed 350 A PD TotalDissipation 56 W Tj OperatingJunctionTemperature -55~175 ℃ Tstg StorageTemperature -55~175 ℃
- THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-casethermalresistance 2.7 ℃/W Rth(ch-a) Channel-to-ambientthermalresistance 50 ℃/W
iscwebsite：www.iscsemi.cn isc & iscsemi isregisteredtrademark2 iscN-ChannelMOSFETTransistor IPU060N03L ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-SourceBreakdownVoltage VGS=0V;ID=1.0mA 30 V VGS(th) GateThresholdVoltage VDS=VGS;ID=0.25mA 1.0 2.2 V RDS(on) Drain-SourceOn-Resistance VGS=10V;ID=30A 5.0 6.0 mΩ IGSS Gate-SourceLeakageCurrent VGS= ±20V;VDS=0V ±0.1 μA IDSS Drain-SourceLeakageCurrent VDS=30V;VGS=0V;Tj=25℃ VDS=30V;VGS=0V;Tj=125℃ 100 μA VSDF Diodeforwardvoltage ISD=30A,VGS =0V 1.1 V