IPF039N03LG INFINEON | Alldatasheet
Document overview
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- PDF pages: 10
Technical content
Features
- Fast switching MOSFET for SMPS
- Optimized technology for DC/DC converters
- Qualified according to JEDEC 1) for target applications
- N-channel, logic level
- Excellent gate charge x R DS(on) product (FOM)
- Very low on-resistance R DS(on)
- Avalanche rated
- Pb-free plating; RoHS compliant Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current I D V GS=10 V, T C=25 °C 50 A V GS=10 V, T C=100 °C 50 V GS=4.5 V, T C=25 °C 50 V GS=4.5 V, T C=100 °C 50 Pulsed drain current2) I D,pulse T C=25 °C 350 Avalanche current, single pulse3) I AS T C=25 °C 50 Avalanche energy, single pulse E AS I D=50 A, R GS=25 Ω 115 mJ Reverse diode dv /dt dv /dt I D=50 A, V DS=24 V, di /dt =200 A/µs, T j,max=175 °C 6 kV/µs Gate source voltage V GS ±20 V Value 1) J-STD20 and JESD22 V DS 30 V R DS(on),max 3.9 mΩ I D 50 A Product Summary Type IPF039N03L G IPU039N03L G Marking 039N03L 039N03L Rev. 0.9 target datasheet page 1 2006-10-23
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Power dissipation P tot T C=25 °C 94 W Operating and storage temperature T j, T stg -55 ... 175 °C IEC climatic category; DIN IEC 68-1 55/175/56 Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, junction - case R thJC - - 1.6 K/W SMD version, device on PCB R thJA minimal footprint - - 75 6 cm² cooling area4) -- 5 0 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 30 - - V Gate threshold voltage V GS(th) V DS=V GS, I D=250 µA 1 - 2.2 Zero gate voltage drain current I DSS V DS=30 V, V GS=0 V, T j=25 °C - 0.1 1 µA V DS=30 V, V GS=0 V, T j=125 °C - 10 100 Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 10 100 nA R DS(on) V GS=4.5 V, I D=30 A - 4.2 5.2 mΩ V GS=10 V, I D=30 A - 3.3 3.9 Gate resistance R G - 1.6 - Ω Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=30 A 48 96 - S Value Values 2) See figure 3 for more detailed information Drain-source on-state resistance5) 4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 5) Measured from drain tab to source pin 3) See figure 13 for more detailed information Rev. 0.9 target datasheet page 2 2006-10-23
Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics Input capacitance C iss - 4000 5300 pF Output capacitance C oss - 1400 1900 Reverse transfer capacitance Crss - 81 120 Turn-on delay time t d(on) -9- n s Rise time t r -7- Turn-off delay time t d(off) -3 5- Fall time t f -5- Gate Charge Characteristics6) Gate to source charge Q gs -1 2- n C Gate charge at threshold Q g(th) - 6.3 - Gate to drain charge Q gd - 5.6 - Switching charge Q sw -1 1- Gate charge total Q g -2 5- Gate plateau voltage V plateau - 2.9 - V Gate charge total Q g V DD=15 V, I D=30 A, V GS=0 to 10 V -5 1- Gate charge total, sync. FET Q g(sync) V DS=0.1 V, V GS=0 to 4.5 V -2 2- n C Output charge Q oss V DD=15 V, V GS=0 V -3 7- Reverse Diode Diode continuous forward current I S - - 50 A Diode pulse current I S,pulse - - 350 Diode forward voltage V SD V GS=0 V, I F=30 A, T j=25 °C - 0.85 1.1 V Reverse recovery charge Q rr V R=15 V, I F=I S, di F/dt =400 A/µs - - 20 nC 6) See figure 16 for gate charge parameter definition T C=25 °C Values V GS=0 V, V DS=15 V, f =1 MHz V DD=15 V, V GS=10 V, I D=30 A, R G=1.6 Ω V DD=15 V, I D=30 A, V GS=0 to 4.5 V Rev. 0.9 target datasheet page 3 2006-10-23
1 Power dissipation 2 Drain current
P tot=f(T C) I D=f(T C); V GS≥10 V 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 1 µs 10 µs 100 µs 1 ms 10 ms DC 10210110010-1 103 102 101 100 10-1 V DS [V] I D [A] limited by on-state resistance single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10010-110-210-310-410-510-6 0.01 0.1 0000001 t p [s] Z thJC [K/W] 100 0 50 100 150 200 T C [°C] P tot [W] 0 50 100 150 200 T C [°C] I D [A] Rev. 0.9 target datasheet page 4 2006-10-23
5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 3 V 3.2 V 3.5 V 4 V 4.5 V
5 V10 V
11.5 V 0 2 04 06 08 0 1 0 0 I D [A] R DS(on) [mΩ ] 25 °C 175 °C 120 150 012345 V GS [V] I D [A] 120 160 0 2 04 06 08 0 1 0 0 I D [A] g fs [S] 2.8 V 3 V 3.2 V 3.5 V 4 V 4.5 V 5 V 10 V 120 150 0123 V DS [V] I D [A] Rev. 0.9 target datasheet page 5 2006-10-23
9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=30 A; V GS=10 V V GS(th)=f(T j); V GS=V DS; I D=250 µA 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j typ 98 % -60 -20 20 60 100 140 180 T j [°C] R DS(on) [mΩ ] 0.5 1.5 2.5 -60 -20 20 60 100 140 180 T j [°C] V GS(th) [V] Ciss Coss Crss 104 103 102 101 01 0 2 0 3 0 V DS [V] C [pF] 25 °C 175 °C 25 °C, 98% 175 °C, 98% 103 102 101 100 0 0.5 1 1.5 2 V SD [V] I F [A] z Rev. 0.9 target datasheet page 6 2006-10-23
13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=30 A pulsed parameter: T j(start) parameter: V DD
15 Drain-source breakdown voltage 16 Gate charge waveforms
V BR(DSS)=f(T j); I D=1 mA -60 -20 20 60 100 140 180 T j [°C] V BR(DSS) [V] V GS Q gate V gs(t h ) Q g(th) Q gs Q gd Q sw Q g 25 °C 100 °C 150 °C 10310210110010-1 100 t AV [µs] I AV [A] 6 V 15 V 24 V 0 1 02 03 04 05 06 0 Q gate [nC] V GS [V] Rev. 0.9 target datasheet page 7 2006-10-23
PG-TO251-3-11: Outline PG-TO251-3-21: Outline Rev. 0.9 target datasheet page 8 2006-10-23
PG-TO251-3-11: Outline PG-TO251-3-21: Outline Rev. 0.9 target datasheet page 9 2006-10-23
81726 München, Germany
© Infineon Technologies AG 2006. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 0.9 target datasheet page 10 2006-10-23