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MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSTMPower-Transistor,60V IPT007N06N DataSheet Rev.2.1 Final PowerManagement&Multimarket

OptiMOSTMPower-Transistor,60V IPT007N06N Rev.2.1,2014-02-20Final Data Sheet Tab 12 3 4 5 6 7 HSOF Drain Tab Gate Pin 1 Source Pin 2-8 1Description

Features

  • 100%avalanchetested
  • Superiorthermalresistance
  • N-channel
  • QualifiedaccordingtoJEDEC1)fortargetapplications
  • Pb-freeleadplating;RoHScompliant
  • Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 60 V RDS(on),max 0.75 mΩ ID 300 A Qoss 227 nC QG(0V..10V) 216 nC Type/OrderingCode Package Marking RelatedLinks IPT007N06N PG-HSOF-8-1 007N06N - 1) J-STD20 and JESD22

OptiMOSTMPower-Transistor,60V IPT007N06N Rev.2.1,2014-02-20Final Data Sheet TableofContents

OptiMOSTMPower-Transistor,60V IPT007N06N Rev.2.1,2014-02-20Final Data Sheet 2Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Continuous drain current ID 300 300 A VGS=10V,TC=25°C VGS=10V,TC=100°C VGS=10V,TC=25°C,RthJA=40K/W Pulsed drain current 2) ID,pulse - - 1200 A TC=25°C Avalanche energy, single pulse 3) EAS - - 1100 mJ ID=150A,RGS=25Ω Gate source voltage VGS -20 - 20 V - Power dissipation Ptot - - 375 W TC=25°C Operating and storage temperature Tj,Tstg -55 - 175 °C IEC climatic category; DIN IEC 68-1: 55/175/56 3Thermalcharacteristics Table3Thermalcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Thermal resistance, junction - case RthJC - 0.2 0.4 K/W - Device on PCB, minimal footprint RthJA - - 62 K/W - Device on PCB, 6 cm² cooling area 1) RthJA - - 40 K/W - 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 2) See figure 3 for more detailed information 3) See figure 13 for more detailed information

OptiMOSTMPower-Transistor,60V IPT007N06N Rev.2.1,2014-02-20Final Data Sheet 4Electricalcharacteristics Table4Staticcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Drain-source breakdown voltage V(BR)DSS 60 - - V VGS=0V,ID=1mA Gate threshold voltage VGS(th) 2.1 2.8 3.3 V VDS=VGS,ID=280µA Zero gate voltage drain current IDSS 0.5 100 µA VDS=60V,VGS=0V,Tj=25°C VDS=60V,VGS=0V,Tj=125°C Gate-source leakage current IGSS - 10 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) 0.66 0.85 0.75 1 mΩ VGS=10V,ID=150A VGS=6V,ID=75A Gate resistance RG - 1.8 2.7 Ω - Transconductance gfs 160 320 - S |VDS|>2|ID|RDS(on)max,ID=100A Table5Dynamiccharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Input capacitance Ciss - 16000 21280 pF VGS=0V,VDS=30V,f=1MHz Output capacitance Coss - 3400 4522 pF VGS=0V,VDS=30V,f=1MHz Reverse transfer capacitance Crss - 229 458 pF VGS=0V,VDS=30V,f=1MHz Turn-on delay time td(on) - 38 - ns VDD=30V,VGS=10V,ID=100A, RG,ext=1.8Ω Rise time tr - 18 - ns VDD=30V,VGS=10V,ID=100A, RG,ext=1.8Ω Turn-off delay time td(off) - 76 - ns VDD=30V,VGS=10V,ID=100A, RG,ext=1.8Ω Fall time tf - 22 - ns VDD=30V,VGS=10V,ID=100A, RG,ext=1.8Ω Table6Gatechargecharacteristics1) Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Gate to source charge Qgs - 67 - nC VDD=30V,ID=100A,VGS=0to10V Gate charge at threshold Qg(th) - 47 - nC VDD=30V,ID=100A,VGS=0to10V Gate to drain charge Qgd - 39 - nC VDD=30V,ID=100A,VGS=0to10V Switching charge Qsw - 58 - nC VDD=30V,ID=100A,VGS=0to10V Gate charge total Qg - 216 287 nC VDD=30V,ID=100A,VGS=0to10V Gate plateau voltage Vplateau - 4.2 - V VDD=30V,ID=100A,VGS=0to10V Gate charge total, sync. FET Qg(sync) - 192 255 nC VDS=0.1V,VGS=0to10V Output charge Qoss - 227 - - VDD=30V,VGS=0V 1) See ″Gate charge waveforms″ for parameter definition

OptiMOSTMPower-Transistor,60V IPT007N06N Rev.2.1,2014-02-20Final Data Sheet Table7Reversediode Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Diode continuous forward current IS - - 300 A TC=25°C Diode pulse current IS,pulse - - 1200 A TC=25°C Diode forward voltage VSD - 0.87 1 V VGS=0V,IF=150A,Tj=25°C Reverse recovery time trr - 87 174 ns VR=30V,IF=100A,diF/dt=100A/µs Reverse recovery charge Qrr - 144 - nC VR=30V,IF=100A,diF/dt=100A/µs

OptiMOSTMPower-Transistor,60V IPT007N06N Rev.2.1,2014-02-20Final Data Sheet 5Electricalcharacteristicsdiagrams Diagram1:Powerdissipation TC[°C] Ptot[W] 100 125 150 175 100 150 200 250 300 350 400 Ptot=f(TC) Diagram2:Draincurrent TC[°C] ID[A] 100 125 150 175 200 100 150 200 250 300 350 ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea VDS[V] ID[A] 10-1 100 101 102 10-1 100 101 102 103 104 1 µs 10 µs 100 µs 1 ms 10 ms DC ID=f(VDS);TC=25°C;D=0;parameter:tp Diagram4:Max.transientthermalimpedance tp[s] ZthJC[K/W] 10-6 10-5 10-4 10-3 10-2 10-1 100 10-3 10-2 10-1 100 0.5 0.2 0.1 0.05 0.02 0.01 single pulse ZthJC=f(tp);parameter:D=tp/T

OptiMOSTMPower-Transistor,60V IPT007N06N Rev.2.1,2014-02-20Final Data Sheet Diagram5:Typ.outputcharacteristics VDS[V] ID[A] 0.0 0.5 1.0 1.5 2.0 2.5 3.0 200 400 600 800 1000 1200 7 V 10 V 6 V 5.5 V 5 V ID=f(VDS);Tj=25°C;parameter:VGS Diagram6:Typ.drain-sourceonresistance ID[A] RDS(on)[mΩ ] 200 400 600 800 1000 1200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 5 V 5.5 V 6 V 7 V 10 V RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics VGS[V] ID[A] 200 400 600 800 1000 1200 175 °C 25 °C ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Diagram8:Typ.forwardtransconductance ID[A] gfs[S] 100 150 200 100 150 200 250 300 350 400 450 gfs=f(ID);Tj=25°C

OptiMOSTMPower-Transistor,60V IPT007N06N Rev.2.1,2014-02-20Final Data Sheet Diagram9:Drain-sourceon-stateresistance Tj[°C] RDS(on)[mΩ ] -60 -20 100 140 180 0.0 0.4 0.8 1.2 1.6 max typ RDS(on)=f(Tj);ID=150A;VGS=10V Diagram10:Typ.gatethresholdvoltage Tj[°C] VGS(th)[V] -60 -20 100 140 180 2800 µA 280 µA VGS(th)=f(Tj);VGS=VDS Diagram11:Typ.capacitances VDS[V] C[pF] 101 102 103 104 105 Ciss Coss Crss C=f(VDS);VGS=0V;f=1MHz Diagram12:Forwardcharacteristicsofreversediode VSD[V] IF[A] 0.0 0.5 1.0 1.5 2.0 100 101 102 103 104 25 °C 175 °C 25 °C, 98% 175 °C, 98% IF=f(VSD);parameter:Tj

OptiMOSTMPower-Transistor,60V IPT007N06N Rev.2.1,2014-02-20Final Data Sheet Diagram13:Avalanchecharacteristics tAV[µs] IAV[A] 100 101 102 103 100 101 102 103 25 °C 100 °C 125 °C IAS=f(tAV);RGS=25Ω ;parameter:Tj(start) Diagram14:Typ.gatecharge Qgate[nC] VGS[V] 100 150 200 250 48 V 30 V 12 V VGS=f(Qgate);ID=100Apulsed;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Tj[°C] VBR(DSS)[V] -60 -20 100 140 180 VBR(DSS)=f(Tj);ID=1mA Gate charge waveforms

OptiMOSTMPower-Transistor,60V IPT007N06N Rev.2.1,2014-02-20Final Data Sheet 6PackageOutlines Z8B00169619 REVISIONISSUE DATE EUROPEAN PROJECTION 0220-02-2014 DOCUMENT NO. E5E4 e MILLIMETERSADIMMINMAXINCHESMINMAXb1cDD2EE1 NL 1.60 9.900.6010.5810.10 2.10 0.3820.0160.4050.382 0.063 0.3900.0240.4160.398 0.0838 8 1.20 (BSC)0.047 (BSC) b 0.700.900.0280.0351) partially covered with Mold Flash b20.420.500.0170.020 2SCALE0 4mm Figure1OutlinePG-HSOF-8-1,dimensionsinmm/inches

OptiMOSTMPower-Transistor,60V IPT007N06N Rev.2.1,2014-02-20Final Data Sheet RevisionHistory IPT007N06N Revision:2014-02-20,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2014-02-06 Release of final version 2.1 2014-02-20 Update Diagram 12 WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2014InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.