IPT004N03L INFINEON | Alldatasheet

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MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSTMPower-MOSFET,30V IPT004N03L DataSheet Rev.2.0 Final PowerManagement&Multimarket

OptiMOSTMPower-MOSFET,30V IPT004N03L Rev.2.0,2014-10-08Final Data Sheet Tab 12 3 4 5 6 7 HSOF Drain Tab Gate Pin 1 Source Pin 2-8 1Description

Features

  • Optimizedfore-fuseandORingapplication
  • Verylowon-resistanceRDS(on)@VGS=4.5V
  • 100%avalanchetested
  • Superiorthermalresistance
  • N-channel
  • QualifiedaccordingtoJEDEC1)fortargetapplications
  • Pb-freeleadplating;RoHScompliant Table1KeyPerformanceParameters Parameter Value Unit VDS 30 V RDS(on),max 0.4 mΩ ID 300 A QOSS 141 nC QG(0V..10V) 252 nC Type/OrderingCode Package Marking RelatedLinks IPT004N03L PG-HSOF-8-1 004N03L - 1) J-STD20 and JESD22

OptiMOSTMPower-MOSFET,30V IPT004N03L Rev.2.0,2014-10-08Final Data Sheet TableofContents

OptiMOSTMPower-MOSFET,30V IPT004N03L Rev.2.0,2014-10-08Final Data Sheet 2Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings at 25 °C Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Continuous drain current ID 300 300 300 300 A VGS=10V,TC=25°C VGS=10V,TC=100°C VGS=4.5V,TC=25°C VGS=4.5V,TC=100°C VGS=10V,TA=25°C,RthJA=40K/W1) Pulsed drain current2) ID,pulse - - 1200 A TC=25°C Avalanche energy, single pulse3) EAS - - 830 mJ ID=150A Gate source voltage VGS -20 - 20 V - Power dissipation Ptot 300

3.8 W TC=25°C

TA=25°C,RthJA=40K/W1) Operating and storage temperature Tj,Tstg -55 - 150 °C IEC climatic category; DIN IEC 68-1: 55/150/56 3Thermalcharacteristics Table3Thermalcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Thermal resistance, junction - case RthJC - - 0.5 K/W - Device on PCB RthJA

62 K/W 6 cm² cooling area1)

1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 2) See figure 3 for more detailed information 3) See figure 13 for more detailed information

OptiMOSTMPower-MOSFET,30V IPT004N03L Rev.2.0,2014-10-08Final Data Sheet 4Electricalcharacteristics Table4Staticcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Drain-source breakdown voltage V(BR)DSS 30 - - V VGS=0V,ID=10mA Gate threshold voltage VGS(th) 0.7 - 2.2 V VDS=VGS,ID=250µA Zero gate voltage drain current IDSS 0.1 100 µA VDS=30V,VGS=0V,Tj=25°C VDS=30V,VGS=0V,Tj=125°C Gate-source leakage current IGSS - 10 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) 0.44 0.37 0.5 0.4 mΩ VGS=4.5V,ID=150A VGS=10V,ID=150A Gate resistance RG 1.4 2.7 5.4 Ω - Transconductance gfs 160 320 - S |VDS|>2|ID|RDS(on)max,ID=30A Table5Dynamiccharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Input capacitance Ciss - 18000 24000 pF VGS=0V,VDS=15V,f=1MHz Output capacitance Coss - 5400 7200 pF VGS=0V,VDS=15V,f=1MHz Reverse transfer capacitance Crss - 590 - pF VGS=0V,VDS=15V,f=1MHz Turn-on delay time td(on) - 30 - ns VDD=15V,VGS=10V,ID=30A, RG,ext=1.6Ω Rise time tr - 17 - ns VDD=15V,VGS=10V,ID=30A, RG,ext=1.6Ω Turn-off delay time td(off) - 149 - ns VDD=15V,VGS=10V,ID=30A, RG,ext=1.6Ω Fall time tf - 37 - ns VDD=15V,VGS=10V,ID=30A, RG,ext=1.6Ω Table6Gatechargecharacteristics1) Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Gate to source charge Qgs - 40 53 nC VDD=15V,ID=30A,VGS=0to4.5V Gate charge at threshold Qg(th) - 29 - nC VDD=15V,ID=30A,VGS=0to4.5V Gate to drain charge Qgd - 28 36 nC VDD=15V,ID=30A,VGS=0to4.5V Switching charge Qsw - 38 - nC VDD=15V,ID=30A,VGS=0to4.5V Gate charge total Qg - 122 163 nC VDD=15V,ID=30A,VGS=0to4.5V Gate plateau voltage Vplateau - 2.2 - V VDD=15V,ID=30A,VGS=0to4.5V Gate charge total Qg - 252 336 nC VDD=15V,ID=30A,VGS=0to10V Gate charge total, sync. FET Qg(sync) - 105 - nC VDS=0.1V,VGS=0to4.5V Output charge Qoss - 141 188 nC VDD=15V,VGS=0V 1) See ″Gate charge waveforms″ for parameter definition

OptiMOSTMPower-MOSFET,30V IPT004N03L Rev.2.0,2014-10-08Final Data Sheet Table7Reversediode Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Diode continuous forward current IS - - 300 A TC=25°C Diode pulse current IS,pulse - - 1200 A TC=25°C Diode forward voltage VSD - 0.83 1 V VGS=0V,IF=150A,Tj=25°C Reverse recovery charge Qrr - 100 - nC VR=15V,IF=100A,diF/dt=400A/µs

OptiMOSTMPower-MOSFET,30V IPT004N03L Rev.2.0,2014-10-08Final Data Sheet 5Electricalcharacteristicsdiagrams Diagram1:Powerdissipation TC[°C] Ptot[W] 120 160 200 100 150 200 250 300 350 Ptot=f(TC) Diagram2:Draincurrent TC[°C] ID[A] 120 160 200 100 150 200 250 300 350 ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea VDS[V] ID[A] 10-1 100 101 102 10-1 100 101 102 103 104 1 µs 10 µs 100 µs 1 ms 10 ms DC ID=f(VDS);TC=25°C;D=0;parameter:tp Diagram4:Max.transientthermalimpedance tp[s] ZthJC[K/W] 10-6 10-5 10-4 10-3 10-2 10-1 100 10-3 10-2 10-1 100 101 0.5 0.2 0.1 0.05 0.02 0.01 single pulse ZthJC=f(tp);parameter:D=tp/T

OptiMOSTMPower-MOSFET,30V IPT004N03L Rev.2.0,2014-10-08Final Data Sheet Diagram5:Typ.outputcharacteristics VDS[V] ID[A] 200 400 600 800 1000 1200 3.5 V 4 V 4.5 V 5 V 10 V 3.2 V 3 V 2.8 V ID=f(VDS);Tj=25°C;parameter:VGS Diagram6:Typ.drain-sourceonresistance ID[A] RDS(on)[mΩ ] 100 200 300 400 500 600 700 0.0 0.1 0.2 0.3 0.4 0.5 0.6 3.2 V 3.5 V 4 V 4.5 V 5 V 7 V 8 V 10 V RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics VGS[V] ID[A] 200 400 600 800 1000 1200 175 °C 25 °C ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Diagram8:Typ.forwardtransconductance ID[A] gfs[S] 120 160 100 200 300 400 500 600 700 800 gfs=f(ID);Tj=25°C

OptiMOSTMPower-MOSFET,30V IPT004N03L Rev.2.0,2014-10-08Final Data Sheet Diagram9:Drain-sourceon-stateresistance Tj[°C] RDS(on)[mΩ ] -60 -20 100 140 180 0.0 0.2 0.4 0.6 0.8 1.0 typ RDS(on)=f(Tj);ID=150A;VGS=10V Diagram10:Typ.gatethresholdvoltage Tj[°C] VGS(th)[V] -60 -20 100 140 180 0.0 0.5 1.0 1.5 2.0 2.5 1 mA VGS(th)=f(Tj);VGS=VDS;ID=1mA Diagram11:Typ.capacitances VDS[V] C[pF] 102 103 104 105 Ciss Coss Crss C=f(VDS);VGS=0V;f=1MHz Diagram12:Forwardcharacteristicsofreversediode VSD[V] IF[A] 0.0 0.5 1.0 1.5 100 101 102 103 104 175 °C 25 °C IF=f(VSD);parameter:Tj

OptiMOSTMPower-MOSFET,30V IPT004N03L Rev.2.0,2014-10-08Final Data Sheet Diagram13:Avalanchecharacteristics tAV[µs] IAV[A] 100 101 102 103 100 101 102 103 25 °C 100 °C 125 °C IAS=f(tAV);RGS=25Ω ;parameter:Tj(start) Diagram14:Typ.gatecharge Qgate[nC] VGS[V] 100 150 200 250 300 24 V 15 V 6 V VGS=f(Qgate);ID=30Apulsed;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Tj[°C] VBR(DSS)[V] -60 -20 100 140 180 VBR(DSS)=f(Tj);ID=10mA Gate charge waveforms

OptiMOSTMPower-MOSFET,30V IPT004N03L Rev.2.0,2014-10-08Final Data Sheet 6PackageOutlines Z8B00169619 REVISIONISSUE DATE EUROPEAN PROJECTION 0220-02-2014 DOCUMENT NO. E5E4 e MILLIMETERSADIMMINMAXINCHESMINMAXb1cDD2EE1 NL 1.60 9.900.6010.5810.10 2.10 0.3820.0160.4050.382 0.063 0.3900.0240.4160.398 0.0838 8 1.20 (BSC)0.047 (BSC) b 0.700.900.0280.0351) partially covered with Mold Flash b20.420.500.0170.020 2SCALE0 4mm Figure1OutlinePG-HSOF-8-1

OptiMOSTMPower-MOSFET,30V IPT004N03L Rev.2.0,2014-10-08Final Data Sheet RevisionHistory IPT004N03L Revision:2014-10-08,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2014-10-08 Release of final version WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2014InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.