IPS60R3K4CE ISC | Alldatasheet
Document overview
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- PDF pages: 2
Technical content
iscwebsite：www.iscsemi.cn isc & iscsemi isregisteredtrademark1 iscN-ChannelMOSFETTransistor IPS60R3K4CE
- FEATURES
- WithTO-251(IPAK)packaging
- Highspeed switching
- Easytouse
- 100% avalanchetested
- MinimumLot-to-Lotvariations forrobustdevice performanceandreliable operation
- APPLICATIONS
- Powersupply
- DC-DCconverters
- Motorcontrol
- Switching applications
- ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-SourceVoltage 600 V VGSS Gate-SourceVoltage ±30 V ID DrainCurrent-Continuous 2.6 A IDM DrainCurrent-SinglePulsed 3.9 A PD TotalDissipation 29 W Tj OperatingJunctionTemperature -40~150 ℃ Tstg StorageTemperature -40~150 ℃
- THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-casethermalresistance 4.26 ℃/W Rth(ch-a) Channel-to-ambientthermalresistance 62 ℃/W
iscwebsite：www.iscsemi.cn isc & iscsemi isregisteredtrademark2 iscN-ChannelMOSFETTransistor IPS60R3K4CE ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-SourceBreakdownVoltage VGS=0V;ID=0.25mA 600 V VGS(th) GateThresholdVoltage VDS=VGS;ID=0.04mA 2.5 3.5 V RDS(on) Drain-SourceOn-Resistance VGS=10V;ID=0.5A 3.17 3.4 Ω IGSS Gate-SourceLeakageCurrent VGS= ±20V;VDS=0V ±0.1 μA IDSS Drain-SourceLeakageCurrent VDS=600V;VGS=0V;Tj=25℃ VDS=600V;VGS=0V;Tj=150℃ 100 μA VSDF Diodeforwardvoltage ISD=0.6A,VGS =0V 0.9 V