IPS1031 IRF | Alldatasheet

Document overview

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Technical content

Features

  • Over temperature shutdown
  • Over current shutdown
  • Active clamp e• Low current & logic lev l input On/Off for EMI ) is a three terminal Intelligent Power
  • ESD protection
  • Optimized Turn
  • Diagnostic on the input current

Description

The IPS1031(S)(R Switch (IPS) that features a low side MOSFET with over- current, over-temperature, ESD protection and drain to source active clamp. T his device offers protections and the high reliability required in harsh environments. T he switch provides efficient pr otection by turning OF F the power MOSFET when the temperature exceeds 165°C or when the drain current reaches 18A. T he device restarts once the input is cycled. A serial resistance connected to the input provides the diagnostic. The avalanche capability is significantly enhanced by the active clamp and covers most inductive load demagnetizations. Product Summary Rds(on) 50mΩ (max.) Vclamp 36V Ishutdown 18A (typ.) Packages TO-220 D²Pak D-Pak IPS1031 IPS1031S IPS1031R Typical Connection S Control IN Input R D Load +Bat Input Signal V Diag www.irf.com 1

IPS1031(S)(R) Absolute Maximum Ratings Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are referenced to Ground lead. (Tambient=25°C unless otherwise specified). Symbol Parameter Min. Max. Units Vds Maximum drain to source voltage -0.3 36 V Vds cont. Maximum continuous drain to source voltage - 28 V Vin Maximum input voltage -0.3 6 V Isd cont. Max. diode continuous current (limited by thermal dissipation) ⎯ 4 A Maximum power dissipation (internally limited by thermal protection) Rth=5°C/W IPS1031 ⎯ 25 Rth=40°C/W IPS1031S 1” sqr. footprint ⎯ 3.1 W Pd Rth=50C/W IPS1031R 1” sqr. footprint ⎯ 2.5 Electrostatic discharge voltage (Human body) C=100pF, R=1500Ω Between drain and source ⎯ 4 Other combinations ⎯ 3 Electrostatic discharge voltage (Machine Model) C=200pF,R=0Ω Between drain and source ⎯ 0.5 ESD Other combinations ⎯ 0.3 kV Tj max. Max. storage & operating temperature junction temperature -40 150 °C Tsoldering Lead soldering temperature (10 seconds) ⎯ 300 °C Thermal Characteristics Symbol Parameter Typ. Max. Units Rth1 Thermal resistance junction to ambient IPS1031 TO-220 free air 50 ⎯ Rth2 Thermal resistance junction to case IPS1031 TO-220 3.9 ⎯ Rth1 Thermal resistance junction to ambient IPS1031S D²Pak std. footprint 60 ⎯ Rth2 Thermal resistance junction to ambient IPS1031S D²Pak 1” sqr. footprint 40 ⎯ Rth3 Thermal resistance junction to case IPS1031S D²Pak 3.9 ⎯ Rth1 Thermal resistance junction to ambient IPS1031R D-Pak std. footprint 70 ⎯ Rth2 Thermal resistance junction to ambient IPS1031R D-Pak 1” sqr. footprint 50 ⎯ Rth3 Thermal resistance junction to case IPS1031R D-Pak 3.9 ⎯ °C/W Recommended Operating Conditions These values are given for a quick design. For operation outside these conditions, please consult the application notes. Symbol Parameter Min. Max. Units VIH High level input voltage 4.5 5.5 VIL Low level input voltage 0 0.5 Continuous drain current, Tambient=85°C, Tj=125°C, Vin=5V Rth=5°C/W IPS1031 ⎯ 9.5 Rth=40°C/W IPS1031S 1” sqr. footprint ⎯ 3.3 Ids Rth=50C/W IPS1031R 1” sqr. footprint ⎯ 3 A Rin Recommended resistor in series with IN pin to generate a diagnostic 0.5 10 kΩ Max L Max recommended load inductance (including line inductance) (1) ⎯ 50 µH Max F Max. frequency (switching losses = conduction losses) ⎯ 1.5 kHz Max. t rise Max. input rising time ⎯ 1 µs (1) Higher inductance is possible if maximum load current is limited - see figure 11 www.irf.com 2

IPS1031(S)(R) Static Electrical Characteristics Tj=25°C, Vcc=14V (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Test Conditions ON state resistance Tj=25°C ⎯ 40 50 Rds(on) ON state resistance Tj=150°C (2) ⎯ 76 95 mΩ Vin=5V, Ids=8A Idss1 Drain to source leakage current ⎯ 0.1 10 Vcc=14V, Tj=25°C Idss2 Drain to source leakage current ⎯ 0.2 20 µA Vcc=28V, Tj=25°C V clamp1 Drain to source clamp voltage 1 36 39 ⎯ Id=20mA V clamp2 Drain to source clamp voltage 2 ⎯ 40 42 Id=1A Vin clamp IN to source pin clamp voltage 5.5 6.5 7.5 Iin=1mA Vth Input threshold voltage ⎯ 1.7 ⎯ V Id=10mA Switching Electrical Characteristics Vcc=14V, Resistive load=1.5Ω, Rinput=0Ω, Vin=5V, Tj=25°C Symbol Parameter Min. Typ. Max. Units Test Conditions Tdon Turn-on delay time to 20% 3 10 30 Tr Rise time 20% to 80% 6 20 40 Tdoff Turn-off delay time to 80% 20 70 200 Tf Fall time 80% to 20% 6 15 30 µs See figure 2 Eon + Eoff Turn on and off energy ⎯ 0.7 ⎯ mJ Protection Characteristics Symbol Parameter Min. Typ. Max. Units Test Conditions Tsd Over temperature threshold 150(2) 165 ⎯ °C See figure 1 Isd Over current threshold 12 18 24 A See figure 1 OV Over voltage protection (not active when the device is ON ) 34 37 ⎯ V Vreset IN protection reset threshold ⎯ 1.7 ⎯ V Treset Time to reset protection 15(2) 50 200 µs Vin=0V Diagnostic Symbol Parameter Min. Typ. Max. Units Test Conditions Iin, on ON state IN positive current 15 32 70 Iin, off OFF state IN positive current ( after protection latched ) 150 230 350 µA Vin=5V Vin=5V (2) Guaranteed by design www.irf.com 3

IPS1031(S)(R) Lead Assignments 1 2 3 TO220 1- In 2- D 3- S 2 - Drain 1 2 3 D²Pak – D Pak 2 - Drain Functional Block Diagram All values are typical IN S R Q 6.5V Tj > 165°C DRAIN SOURCE 37V 15kΩ I > Isd 75Ω 43V Vds > O.V. 2kΩ 150kΩ www.irf.com 4

IPS1031(S)(R) Case Outline – TO-220 AB www.irf.com 9

IPS1031(S)(R) Case Outline - D²Pak (SMD-220) www.irf.com 10

IPS1031(S)(R) Case Outline – D-Pak www.irf.com 11

IPS1031(S)(R) Tape & Reel - D²Pak (SMD220) www.irf.com 12

IPS1031(S)(R) Tape & Reel - D-Pak IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105 Data and specifications subject to change without notice. This product is designed and qualified for the Automotive [Q100] market. 9/22/2005 www.irf.com 13