IPS0551T IRF | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 10

Technical content

Features

  • Over temperature shutdown
  • Over current shutdown
  • Active clamp
  • Low current & logic level input
  • E.S.D protection IPS0551T FULLY PROTECTED POWER MOSFET SWITCH Data Sheet No. PD60160-A Package Product Summary Typical Connection

Description

The IPS0551T is a fully protected three terminal SMART POWER MOSFET that features over-current, over-tem- perature, ESD protection, and drain to source active clamp. This device combines a HEXFET® POWER MOSFET and a gate driver. It offers full protection and high reliability required in harsh environments. The driver allows short switching times and provides efficient protec- tion by turning OFF the power MOSFET when temperature exceeds 165 oC or when the drain current reaches 100A. The device restarts once the input is cycled. The ava- lanche capability is significantly enhanced by the active clamp and covers most inductive load demagnetiza- tions. R ds(on) 5.2mΩ (max) V clamp 40V Ishutdown 100A Ton/Toff 4µs SUPER SMD220 Advance Information SUPER TO220 L oad R i n seri es ( i f needed ) Logi c si gnal IN D control S www.irf.com 1

2 www.irf.com (1) Limited by junction temperature (pulsed current limited also by internal wiring) (2) Operations at higher switching frequencies is possible. See Appl. Notes. Absolute Maximum Ratings Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are referenced to SOURCE lead. (TAmbient = 25oC unless otherwise specified). PCB mounting uses the standard foot- print with 70 µm copper thickness. Symbol Parameter Min. Max. Units Test Conditions Vds Maximum drain to source voltage — 37 Vin Maximum input voltage -0.3 7 I+in Maximum IN current -10 +10 mA Isd cont. Diode max. continuous current (1) (rth=60oC/W) — 2.8 (rth=5oC/W) — 35 Isd pulsed Diode max. pulsed current (1) — 100 Pd Maximum power dissipation (1) (rth=60oC/W) — 2 W ESD1 Electrostatic discharge voltage (Human Body) — 4 C=100pF , R=1500 Ω, ESD2 Electrostatic discharge voltage (Machine Model) — 0.5 C=200pF , R=0 Ω, L=10µH Tj max. Max. storage & operating junction temp. -40 +150 Tlead Lead temperature (soldering, 10 seconds) — 300 V A kV oC Symbol Parameter Min. Typ. Max. Units Test Conditions R th 1 Thermal resistance free air — 60 — R th 2 Thermal resistance to PCB min footprint — 60 — R th 3 Thermal resistance to PCB 1" sq. footprint — 35 — R th 4 Thermal resistance junction to case — 0.7 /G97 Thermal Characteristics oC/W Recommended Operating Conditions These values are given for a quick design. For operation outside these conditions, please consult the application notes. Symbol Parameter Min. Max. Units Vds (max) Continuous drain to source voltage — 18 VIH High level input voltage 4 6 VIL Low level input voltage 0 0.5 Ids Continuous drain current Tamb=85 oC (TAmbient = 85oC, IN = 5V, rth = 80oC/W, Tj = 125oC) — 8 (TAmbient = 85oC, IN = 5V, rth = 5oC/W, Tj = 125oC) — 35 R in Recommended resistor in series with IN pin 0.1 0.5 k Ω Tr-in (max)Max recommended rise time for IN signal (see fig. 2) — 1 µS Fr-Isc (2) Max. frequency in short circuit condition (Vcc = 14V) 0 1 kHz V A

www.irf.com 3 Symbol Parameter Min. Typ. Max. Units Test Conditions Tsd Over temperature threshold — 165 — oC See fig. 1 Isd Over current threshold 60 90 120 A See fig. 1 V reset IN protection reset threshold 1.5 1.9 2.8 V Treset Time to reset protection 2 10 40 µs Vin = 0V, Tj = 25oC EOI_OT Short circuit energy (cf application note)100 400 1200 µJ Vcc = 14V Protection Characteristics Symbol Parameter Min. Typ. Max. Units Test Conditions R ds(on) ON state resistance Tj = 25oC — 4.5 5.2 @Tj=25 oC R ds(on) ON state resistance Tj = 150oC — 7.5 8.8 @Tj=150 oC Idss Drain to source leakage current 0 0.01 25 µA Vcc = 14V, Tj = 25oC @Tj=25 oC V clamp 1 Drain to source clamp voltage 1 37 40 — Id = 20mA (see Fig.3 & 4) V clamp 2 Drain to source clamp voltage 2 — 43 48 Vsd Body diode forward voltage — 0.85 1I d = 35A, Vin = 0V Vin clamp IN to source clamp voltage 7 8.0 9.5 Iin = 1 mA Vth IN threshold voltage 1 1.5 2 Id = 50mA, Vds = 14V Iin, on Input supply current (normal operation)25 90 300 V in = 5V Iin, off Input supply current (protection mode) 50 130 400 V in = 5V over-current triggered Static Electrical Characteristics (Tj = 25oC unless otherwise specified. Standard footprint 70µm of copper thickness) Id=Ishutdown (see Fig.3 & 4) V µA Switching Electrical Characteristics Vcc = 14V, Resistive Load = 0.4Ω , Rinput = 50Ω, 100µs pulse, Tj = 25oC, (unless otherwise specified). /G20Symbol Parameter Min. Typ. Max. Units Test Conditions Ton Turn-on delay time 0.25 1 4 Tr Rise time 0.25 14 Trf Time to 130% final Rds(on) —1 5— Toff Turn-off delay time 1.5 4 8 Tf Fall time 0.5 2 5 Q in Total gate charge — 200 — nC V in = 5V See figure 2 See figure 2 µs m Ω Vin = 5V, Ids = 10A

4 www.irf.com Lead Assignments SUPER TO220 1 2 3 In D S Functional Block Diagram All values are typical IN DRAIN SOURCE 80 µ A 37 V I sense 100 k Ω 200 Ω S Q R Q T > 165°c I > Isd SUPER SMD220 (Advanced Information) 2 ( D ) 1 2 3 In D S

8 www.irf.com Figure 15 - Iclamp (A) Vs Inductive Load (mH) Figure 16 - Transient Thermal Imped. (oC/W) Vs Time (s) Figure 13 - Max.Cont. Ids (A) Vs Amb. Temperature (oC) 100 -50 0 50 100 150 200 r th = 1°C/W (cas e t o ambient ) rth = 5° C/W rth = 15° C/W rth = 30° C/ W: 1'' footprint r th= 60°C/W: s t d. f oot pr int Figure 14 - Ids (A) Vs Protection Resp. Time (s) 100 1000 T=25°C free air/ std. footprint T=100°C free air/ std. footprint Current path capability should be above this curve Load characteristic should be below this curve 0.1 100 1000 0. 001 0. 01 0. 1 1 10 100 sing le pulse

10 Hz rth=60°C/W dT=25 °C

100Hz rth=60°C/W dT=25 °C 1kHz rth=60°C/W dT=25 °C Vbat = 14 V Tjini = T sd 1.00E-02 1.00E-01 1.00E+ 00 1.00E+ 01 1.00E+ 02 rth free air / std. fooprint rth 1 inch² footprint rth infinite heatsink Single pulse

10 www.irf.com Case outline Super TO220 01-3073 02 4.00 [.157] 3.50 [.138] 14.50 [.570] 13.00 [.512] 1.30 [.051] 0.90 [.036] 2.55 [.100] 15.00 [.590] 14.00 [.552] 11.00 [.433] 10.00 [.394] 1.50 [.059] 0.50 [.020] A 123 0.25 [.010] B A 3.00 [.118] 2.50 [.099] 1.00 [.039] 0.70 [.028] 5.00 [.196] 4.00 [.158] B 9.00 [.354] 8.00 [.315] 13.50 [.531] 12.50 [.493] 0.25 [.010] BA 1. DIMENSIO NING & TOLERANCING PER A SME Y14.5M-1994. 2. CONT R OL L ING DI ME NS I ON: MI L L I ME T E R . 3. DIMENSIONS ARE SHOWN IN MILLIMET ERS [INCHES]. OS 4. OUT L INE CONF OR MS T O J E DE C OUT L INE T O-273AA. LEA D A SSIG NM ENTS 2 - DRAIN 1 - GATE MOS F E T 4 - DRAIN 3 - S OURCE 4 - C O LLEC TO R 3 - EMIT TER 2 - C O LLEC TO R 1 - GATE IGBT 4/17/2000 Case outline Super SMD220 (advance information) IRGB-012-012 5