IPS041L IRF | Alldatasheet

Document overview

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Technical content

Features

  • Over temperature shutdown
  • Over current shutdown
  • Active clamp
  • Low current & logic level input
  • E.S.D protection IPS041L FULLY PROTECTED POWER MOSFET SWITCH Data Sheet No.PD 60152-K

Description

The IPS041L is a fully protected three terminal SMART POWER MOSFET that features over-current, over- temperature, ESD protection and drain to source active clamp.This device combines a HEXFET® POWER MOSFET and a gate driver. It offers full protection and high reliability required in harsh envi- ronments. The driver allows short switching times and provides efficient protection by turning OFF the power MOSFET when the temperature exceeds 165 oC or when the Drain current reaches 2A. The device restarts once the input is cycled. The avalanche capability is significantly enhanced by the active clamp and covers most inductive load demagnetiza- tions. Package Product Summary R ds(on) 500m Ω (max) V clamp 50V Ishutdown 2A Ton/Toff 1.5µs Typical Connection

3 Lead SOT223

www.irf.com 1 /G83/G81 Load D S controlIN R in series (if needed) Logic signal (Refer to leads assignments for correct pin configuration)

2 www.irf.com (1) Limited by junction temperature (pulsed current limited also by internal wiring) (2) Operations at higher switching frequencies is possible. See Appl. notes. Recommended Operating Conditions These values are given for a quick design. For operation outside these conditions, please consult the application notes. Symbol Parameter Min. Max. Units Vds (max) Continuous drain to source voltage — 35 VIH High level input voltage 4 6 VIL Low level input voltage 0 0.5 Ids Continuous drain current Tamb=85 oC (TAmbient = 85oC, IN = 5V, rth = 100oC/W, Tj = 125oC) — 0.75 A R in Recommended resistor in series with IN pin 1 5 k Ω Tr-in(max)Max recommended rise time for IN signal (see fig. 2) — 1 µS Fr-Isc (2) Max. frequency in short circuit condition (Vcc = 14V) 0 1 kHz V Absolute Maximum Ratings Absolute maximum ratings indicates sustained limits beyond which damage to the device may occur. All voltage parameters are referenced to SOURCE lead. (TAmbient = 25oC unless otherwise specified). PCB mounting uses the standard footprint with 70 µm copper thickness. Symbol Parameter Min. Max. Units Test Conditions Vds Maximum drain to source voltage — 47 Vin Maximum input voltage -0.3 7 Iin, max Maximum IN current -10 +10 mA Isd cont. Diode max. continuous current (1) (rth=125oC/W) — 1.2 Isd pulsed Diode max. pulsed current (1) —3 Pd Maximum power dissipation (1) (rth=125oC/W) — 1 W ESD1 Electrostatic discharge voltage (Human Body) — 4 C=100pF , R=1500 Ω, ESD2 Electrostatic discharge voltage (Machine Model) — 0.5 C=200pF , R=0 Ω, L=10µH T stor. Max. storage temperature -55 150 Tj max. Max. junction temperature -40 150 oC V A kV oC Thermal Characteristics Symbol Parameter Min. Typ. Max. Units Test Conditions R th1 Thermal resistance with standard footprint — 100 — R th2 Thermal resistance with 1" square footprint — 60 — oC/W

www.irf.com 3 Symbol Parameter Min. Typ. Max. Units Test Conditions Tsd Over temperature threshold — 165 — oC See fig. 1 Isd Over current threshold 1.1 1.7 2.2 A See fig. 1 V reset IN protection reset threshold 1.5 2.3 3 V Treset Time to reset protection 2 10 40 µs Vin = 0V, Tj = 25oC EOI_OT Short circuit energy (see application note)— 400 — µJV cc = 14V Protection Characteristics Symbol Parameter Min. Typ. Max. Units Test Conditions R ds(on) ON state resistance Tj = 25oC — 370 500 Tj = 150oC — 590 900 Idss1 Drain to source leakage current 0 0.5 25 V cc = 14V, Tj = 25oC @Tj=25 oC Idss2 Drain to source leakage current 0 5 50 V cc = 40V, Tj = 25oC @Tj=25 oC V clamp 1 Drain to Source clamp voltage 1 47 52 56 Id = 20mA (see Fig.3 & 4) V clamp 2 Drain to Source clamp voltage 2 50 53 60 Vin clamp IN to Source clamp voltage 7 8.1 9.5 Iin = 1 mA Vin th IN threshold voltage 1 1.6 2 Id = 50mA, Vds = 14V Iin, -on ON state IN positive current 25 90 200 V in = 5V Iin, -off OFF state IN positive current 50 130 250 V in = 5V over-current triggered Static Electrical Characteristics (Tj = 25oC unless otherwise specified.) m Ω Vin = 5V, Ids = 1A Id=Ishutdown (see Fig.3 & 4) V µA Switching Electrical Characteristics Vcc = 14V, Resistive Load = 20Ω , Rinput = 1kΩ, 100µs pulse, Tj = 25oC, (unless otherwise specified). /G20Symbol Parameter Min. Typ. Max. Units Test Conditions Ton Turn-on delay time 0.05 0.2 0.5 Tr Rise time 0.5 1.3 2.5 Trf Time to 130% final Rds(on) — 5 — Toff Turn-off delay time 0.5 1.6 2.5 Tf Fall time 0.5 1.5 2.5 Q in Total gate charge — 1 — nC V in = 5V See figure 2 See figure 2 µs µA

4 www.irf.com Lead Assignments (2) D 1 2 3 In D S Functional Block Diagram All values are typical IN DRAIN SOURCE 8.1 V 80 µ A 47 V I sense 200 k Ω 4000Ω S Q R Q T > 165°c I > 1sd

8 www.irf.com Figure 13 - Max.Cont. Ids (A) Vs Amb. Temperature (oC) Figure 14 - Ids (A) Vs Protection Resp.Time (s) Figure 15 - Iclamp (A) Vs Inductive Load (mH) Figure 16 - Transient Thermal Imped. (oC/W) Vs Time (s) -50 0 50 100 150 200 1" footprint 55°C/W std. footprint 100°C/W 0.1 100 Single pulse 0.1 0.01 0.1 1 10 100 single pulse

1000 Hz rth=100°C/W dT=25 °C

10kHz rth=100°C/W dT=25 °C Vbat = 14 V Tjini = T sd 0.1 T=25°C Std. footprint T=100°C Std footprint Current path capability should be above this curve Load characteristic should be below this curve

10 www.irf.com 01-6029 01-0022 05 (TO-261AA) Case Outline 3-Lead SOT-223

www.irf.com 11 Tape & Reel - SOT223 01-0028 05 / 01-0008 02 IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105 Data and specifications subject to change without notice. 6/11/2001