IPS032G IRF | Alldatasheet

Document overview

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Technical content

Features

  • Over temperature shutdown
  • Over current shutdown
  • Active clamp
  • Low current & logic level input
  • E.S.D protection IPS031G/IPS032G SINGLE/DUAL FULLY PROTECTED POWER MOSFET SWITCH Data Sheet No.PD 60151-J

Description

The IPS031G/IPS032G are fully protected single/dual low side SMART POWER MOSFETs that feature over- current, over-temperature, ESD protection and drain to source active clamp.These devices combine a HEXFET ® POWER MOSFET and a gate driver. They offer full protection and high reliability required in harsh environments. The driver allows short switch- ing times and provides efficient protection by turning off the power MOSFET when the temperature ex- ceeds 165 oC or when the drain current reaches 12A. The device restarts once the input is cycled. The avalanche capability is significantly enhanced by the active clamp and covers most inductive load demag- netizations. Product Summary R ds(on) 70m Ω (max) V clamp 50V Ishutdown 12A Ton/Toff 1.5µs Typical Connection /G83 /G81 Load D S controlIN R in series (if needed) Logic signal www.irf.com 1 Packages 8-Lead SOIC IPS031G 16-Lead SOIC IPS032G (Dual) (Refer to lead assignment for correct pin assignment)

2 www.irf.com (1) Limited by junction temperature (pulsed current limited also by internal wiring) Absolute Maximum Ratings Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are ref- erenced to SOURCE lead. (TAmbient = 25oC unless otherwise specified). PCB mounting uses the standard footprint with 70 µm copper thickness. All Sources leads of each mosfet must be connected together to get full current capability Symbol Parameter Min. Max. Units Test Conditions Vds Maximum drain to source voltage — 47 Vin Maximum input voltage -0.3 7 Iin, max Maximum IN current -10 +10 mA Isd cont. Diode max. continuous current (1) (rth=125oC/W) IPS031G — 1.4 (for all sd mosfets, rth=85oC/W) IPS032G — 2 Isd pulsed Diode max. pulsed current (1) (for ea. mosfet)—1 5 Pd Maximum power dissipation (1) (rth=125oC/W) IPS031G — 1 W (for all Pd mosfets, rth=85oC/W) IPS032G — 1.5 ESD1 Electrostatic discharge voltage (Human Body) — 4 C=100pF , R=1500 Ω, ESD2 Electrostatic discharge voltage (Machine Model) — 0.5 C=200pF , R=0 Ω, L=10µH T stor. Max. storage temperature -55 150 Tj max. Max. junction temperature -40 150 V A kV Symbol Parameter Min. Typ. Max. Units Test Conditions R th1 Thermal resistance with standard footprint— 100 — R th2 Thermal resistance with 1" square footprint — 65 — R th1 Thermal resistance with standard footprint (2 mos on) (2 mosfets on) — 85 — R th2 Thermal resistance with standard footprint (1 mos on) (1 mosfet on) — 100 — R th3 Thermal resistance with 1" square footprint (2 mos on) (2 mosfets on) — 60 — Thermal Chacteristics SOIC-8 SOIC-16 oC/W oC

www.irf.com 3 Recommended Operating Conditions These values are given for a quick design. For operation outside these conditions, please consult the application notes. Symbol Parameter Min. Max. Units Vds (max) Continuous Drain to Source voltage — 35 VIH High level input voltage 4 6 VIL Low level input voltage 0 0.5 Ids Continuous drain current Tamb=85 oC (TAmbient = 85oC, IN = 5V, rth = 100oC/W, Tj = 125oC) IPS031G — 2.2 A (TAmbient = 85oC, IN = 5V, rth = 85oC/W, Tj = 125oC) IPS032G — 1.65 R in Recommended resistor in series with IN pin 0.2 5 k Ω Tr-in(max)Max recommended rise time for IN signal (see fig. 2) — 1 µS Fr-Isc (2) Max. frequency in short circuit condition (Vcc = 14V) 0 1 kHz V Symbol Parameter Min. Typ. Max. Units Test Conditions R ds(on) ON state resistance Tj = 25oC 2 04 56 0 R ds(on) ON state resistance Tj = 150oC— 7 5 100 Idss Drain to source leakage current 0 0.5 25 V cc = 14V, Tj = 25oC @Tj=25 oC Idss2 Drain to source leakage current 0 5 50 V cc = 40V, Tj = 25oC @Tj=25 oC V clamp 1 Drain to source clamp voltage 1 47 52 56 Id = 20mA (see Fig.3 & 4) V clamp 2 Drain to source clamp voltage 2 50 53 60 Vin clamp IN to source clamp voltage 7 8.1 9.5 Iin = 1 mA Vth IN threshold voltage 1 1.6 2 Id = 50mA, Vds = 14V Iin, -on ON state IN positive current 25 90 200 V in = 5V Iin, -off OFF state IN positive current 50 130 250 V in = 5V over-current triggered Static Electrical Characteristics (Tj = 25oC unless otherwise specified.) m Ω Vin = 5V, Ids = 1A Id=Ishutdown (see Fig.3 & 4) V µA µA Switching Electrical Characteristics Vcc = 14V, Resistive Load = 5Ω (IPS031), Resistive Load = 3Ω (IPS031S), Rinput = 50Ω, 100µs pulse,Tj = 25oC, (unless otherwise specified). /G20Symbol Parameter Min. Typ. Max. Units Test Conditions Ton Turn-on delay time 0.05 0.3 0.6 Tr Rise time 0.4 1 2 Trf Time to 130% final Rds(on) — 8 — Toff Turn-off delay time 0.8 2 3.5 Tf Fall time 0.5 1.5 2.5 Q in Total gate charge — 1.1 — nC V in = 5V See figure 2 See figure 2 µs

4 www.irf.com Lead Assignments Part Number IPS031G IPS032G Functional Block Diagram Symbol Parameter Min. Typ. Max. Units Test Conditions Tsd Over temperature threshold — 165 — oC See fig. 1 Isd Over current threshold 10 14 18 A See fig. 1 V reset IN protection reset threshold 1.5 2.3 3 V Treset Time to reset protection 2 10 40 µs Vin = 0V, Tj = 25oC EOI_OT Short circuit energy (see application note)— 400 — µJV cc = 14V Protection Characteristics All values are typical IN DRAIN SOURCE 8.1 V 80 µ A 47 V I sense 200 k Ω 300 Ω S Q R Q T > 165°c I > 1sd

16 Lead SOIC

(Dual) S1 S1 S1 I1 S2 S2 S2 I2 D1 D1 D1 D1 D2 D2 D2 D2

8 Lead SOIC

8 www.irf.com Figure 14 - Ids (A) Vs Protection Resp. Time (s) IPS031G/IPS032G Figure 15 - Iclamp (A) Vs Inductive Load (mH) 100 T = 25°C T = 100 °C Figure 13a - Max.Cont. Ids (A) Vs Amb. Temperature (oC) - IPS031G Figure 13b - Max.Cont. Ids (A) Vs Amb. Temperature (oC) - IPS032G -50 0 50 100 150 200 rth = 50°C/W SO8 Std. footprint 100°C/W -50 0 50 100 150 200 SO16 Std. footprint 1 mosfet on SO8 Std. footprint 2 mosfets on 0.1 100 0.01 0.1 1 10 100 single pulse

100 Hz rth=100°C/W dT=25°C

1kHz rth=100°C/W dT=25°C Vbat = 14 V Tjini = T sd

10 www.irf.com -50 -25 0 25 50 75 100 125 150 Treset rise time fall time Figure 19 - Turn-on, Turn-off, and Treset /G28/G75/G73/G29 Vs Tj (oC) 01-6027 01-0021 11 (MS-012AA)8-Lead SOIC D B E A e6X H 0.25 [.010] A 4312 4. OUTLINE CONFO RMS TO JEDEC O UTLINE MS-012AA . NOT ES : 1. DIMENS IO NING & TO LERANCING PER A SME Y14.5M-1994. 2. C ONTROLLING DIMENSION: MILLIMETER 3. DIMENS IONS AR E S HOWN IN MILLIME T E RS [INCHES ]. K x 45° 8X L 8X c y FO O TPRIN T 8X 0.72 [.028] 6.46 [.255] 5 DIMENS ION DOES NOT INCL UDE MOLD PR OT RUS IONS . 6 DIMENS ION DOES NOT INCL UDE MOLD PR OT RUS IONS . MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].

7 DIMENSION IS THE LENGTH O F LEAD FOR SOLDERING TO

A SUBS TRATE. MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006]. 0.25 [.010] C A B A A18X b C 0.10 [.004] D E y b A H K L .189 .1497 .013 .050 BASIC .0532 .0040 .2284 .0099 .016 .1968 .1574 .020 .0688 .0098 .2440 .0196 .050 4.80 3.80 0.33 1.35 0.10 5.80 0.25 0.40

1.27 BAS IC

5.00 4.00 0.51 1.75 0.25 6.20 0.50 1.27 MIN MAX M ILLIM ETERSINCHES MIN MAXDIM e c .0075 .0098 0.19 0.25 .025 BASIC 0.635 BASIC Case Outlines

www.irf.com 11 IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105 Data and specifications subject to change without notice. 6/11/2001 16 -Lead SOIC (narrow body) 01-6018 01-3064 00 (MS-012AC)