IPS031R IRF | Alldatasheet

Document overview

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Technical content

Features

  • Over temperature shutdown
  • Over current shutdown
  • Active clamp
  • Low current & logic level input
  • E.S.D protection IPS031R FULLY PROTECTED POWER MOSFET SWITCH Data Sheet No.PD60220

Description

The IPS031R are fully protected three terminal SMART POWER MOSFETs that feature over-current, over-tem- perature, ESD protection and drain to source active clamp.These devices combine a HEXFET® POWER MOSFET and a gate driver. They offer full protection and high reliability required in harsh environments. The driver allows short switching times and provides efficient protection by turning OFF the power MOSFET when the temperature exceeds 165oC or when the drain current reaches 14A. The device restarts once the input is cycled. The avalanche capability is significantly enhanced by the active clamp and covers most induc- tive load demagnetizations. Product Summary Rds(on) 60mΩ (max) V clamp 50V Ishutdown 14A Ton/Toff 1.5µs www.irf.com Package Typical Connection (Refer to lead assignment for correct pin configuration) Load D S control IN R in series (if needed) Logic signal 3-Lead D-Pak

www.irf.com (1) Limited by junction temperature (pulsed current limited also by internal wiring) (2) Operations at higher switching frequencies is possible. See Application. Notes. Recommended Operating Conditions These values are given for a quick design. For operation outside these conditions, please consult the application notes. Symbol Parameter Min. Max. Units Vds (max) Continuous drain to source voltage VIH High level input voltage VIL Low level input voltage 0.5 Ids Continuous drain current Tamb=85oC TAmbient = 85oC, IN = 5V, rth = 50oC/W, Tj = 125oC) 1" sq. footprint 3.3 A TAmbient = 85oC, IN = 5V, rth = 100oC/W, Tj = 125oC) Std. footprint Rin Recommended resistor in series with IN pin 0.2 kΩ Tr-in(max) Max recommended rise time for IN signal (see fig. 2) µS Fr-Isc (2) Max. frequency in short circuit condition (Vcc = 14V) kHz V Absolute Maximum Ratings Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are referenced to SOURCE lead. (TAmbient = 25oC unless otherwise specified). PCB mounting uses the standard foot- print with 70 µm copper thickness. Symbol Parameter Min. Max. Units Test Conditions Vds Maximum drain to source voltage Vin Maximum input voltage -0.3 Iin, max Maximum IN current -10 +10 mA Isd cont. Diode max. continuous current (1) rth=100oC/W 1.6 D-Pak Std footprint rth=5oC/W D-Pak with Rth=5oC/W rth=50oC/W — 3 D-Pak with sq. footprint Isd pulsed Diode max. pulsed current (1) Pd Maximum power dissipation(1) rth=50oC/W 2.5 rth=100oC/W 1.25 ESD1 Electrostatic discharge voltage (Human Body) C=100pF, R=1500Ω, ESD2 Electrostatic discharge voltage (Machine Model) 0.5 C=200pF, R=0Ω, L=10µH T stor. Max. storage temperature -55 150 Tj max. Max. junction temperature -40 +150 Tlead Lead temperature (soldering, 10 seconds) 300 V W A oC Symbol Parameter Min. Typ. Max. Units Test Conditions Rth 1 Thermal resistance with standard footprint 100 Rth 2 Thermal resistance with 1" square footprint Rth 3 Thermal resistance junction to case Thermal Characteristics oC/W D-PAK kV

www.irf.com Symbol Parameter Min. Typ. Max. Units Test Conditions Tsd Over temperature threshold 165 oC See fig. 1 Isd Over current threshold A See fig. 1 Vreset IN protection reset threshold 1.5 2.3 V Treset Time to reset protection 10 40 µs Vin = 0V, Tj = 25oC EOI_OT Short circuit energy (see application note) 400 µJ Vcc = 14V Protection Characteristics Symbol Parameter Min. Typ. Max. Units Test Conditions Rds(on) ON state resistance Tj = 25oC Rds(on) ON state resistance Tj = 150oC 100 Idss Drain to source leakage current 0.5 Vcc = 14V, Tj = 25oC @Tj=25oC Idss2 Drain to source leakage current Vcc = 40V, Tj = 25oC @Tj=25oC V clamp 1 Drain to source clamp voltage 1 Id = 20mA (see Fig.3 & 4) V clamp 2 Drain to source clamp voltage 2 Vin clamp IN to source clamp voltage 8.1 9.5 Iin = 1 mA Vth IN threshold voltage 1.6 Id = 50mA, Vds = 14V Iin, -on ON state IN positive current 200 Vin = 5V Iin, -off OFF state IN positive current 130 250 Vin = 5V over-current triggered Static Electrical Characteristics (Tj = 25oC unless otherwise specified.) mΩ Vin = 5V, Ids = 1A Id=Ishutdown (see Fig.3 & 4) V Switching Electrical Characteristics Vcc = 14V, Resistive Load = 5Ω , Rinput = 50Ω, 100µs pulse,Tj = 25oC, (unless otherwise specified). Symbol Parameter Min. Typ. Max. Units Test Conditions Ton Turn-on delay time 0.05 0.3 0.6 Tr Rise time 0.4 Trf Time to 130% final Rds(on) Toff Turn-off delay time 0.8 3.5 Tf Fall time 0.5 1.5 2.5 Qin Total gate charge nC Vin = 5V See figure 2 See figure 2 µs µA µA

www.irf.com Lead Assignments IN DRAIN SOURCE 8.1 V 80 µ A 47 V I sense 200 k Ω 300 Ω S Q R Q T > 165°c I > 1sd Functional Block Diagram All values are typical D-Pak IPS031R 1 3 In D S 2 (D)

www.irf.com Fig.16 - Transient Thermal Impedance (oC/W) Vs Time (s) - IPS031R Figure 14 - Ids (A) Vs Protection Resp. Time (s) IPS031R Figure 13 - Max. I load current (A) Vs Tamb (oC) IPS031R Figure 15 - Iclamp (A) Vs Inductive Load (mH) 100 Free air / standard footprint 0.01 0.1 100 1.E-05 1.E-03 1.E-01 1.E+01 1.E+03 Vbat = 14 V Tjini = T sd 0.1 100 0 .0 1 0 .1 1 0 1 0 0 single pulse max. current

100 Hz rth=60°C/W dT=25°C

1kHz rth=60°C/W dT=25°C

www.irf.com 3-Lead D-Pak 01-6031 00 01-0003 03 (JEDEC TO252AA) Case Outline

www.irf.com Tape & Reel - D-PAK IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105 This device was designed and qualified peer automotive level (Q101) Data and specifications subject to change without notice. 6/1/2004 01-3072 00