IPS0151 IRF | Alldatasheet

Document overview

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Technical content

Features

  • Over temperature shutdown
  • Over current shutdown
  • Active clamp
  • Low current & logic level input
  • E.S.D protection IPS0151(S) FULLY PROTECTED POWER MOSFET SWITCH Data Sheet No.PD60144-K

Description

The IPS0151/IPS0151S are fully protected three terminal SMART POWER MOSFETs that feature over-current, over-temperature, ESD protection and drain to source active clamp.These devices combine a HEXFET POWER MOSFET and a gate driver. They offer full protection and high reliability required in harsh envi- ronments. The driver allows short switching times and provides efficient protection by turning OFF the power MOSFET when the temperature exceeds 165 oC or when the drain current reaches 35A. The device restarts once the input is cycled. The avalanche capability is significantly enhanced by the active clamp and covers most inductive load demagnetiza- tions. Packages Product Summary R ds(on) 25m Ω (max) V clamp 50V Ishutdown 35A Ton/Toff 1.5µs Typical Connection 3-Lead D2Pak IPS0151S 3-Lead TO-220 PS0151 S Load R i n seri es ( if needed ) Logi c signal IN D control www.irf.com 1 (Refer to lead assignment for correct pin configuration)

IPS0151(S) 2 www.irf.com (1) Limited by junction temperature (pulsed current limited also by internal wiring) (2) Operations at higher switching frequencies is possible. See Application Notes. Symbol Parameter Min. Typ. Max. Units Test Conditions R th 1 Thermal resistance free air — 55 — R th 2 Thermal resistance junction to case — 2 /G97 R th 1 Thermal resistance with standard footprint — 60 — R th 2 Thermal resistance with 1" square footprint — 35 — R th 3 Thermal resistance junction to case — 2 — Thermal Characteristics TO-220 D 2PAK (SMD220) oC/W Recommended Operating Conditions These values are given for a quick design. For operation outside these conditions, please consult the application notes. Symbol Parameter Min. Max. Units Vds (max) Continuous drain to source voltage — 35 VIH High level input voltage 4 6 VIL Low level input voltage 0 0.5 Ids Continuous drain current Tamb=85 oC (TAmbient = 85oC, IN = 5V, rth = 60oC/W, Tj = 125oC) IPS0151 — 4.3 (TAmbient = 85oC, IN = 5V, rth = 80oC/W, Tj = 125oC) IPS0151S — 3.8 R in Recommended resistor in series with IN pin 0.2 5 k Ω Tr-in (max)Max recommended rise time for IN signal (see fig. 2) — 1 µS Fr-Isc (2) Max. frequency in short circuit condition (Vcc = 14V) 0 1 kHz V A Absolute Maximum Ratings Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are referenced to SOURCE lead. (TAmbient = 25oC unless otherwise specified). PCB mounting uses the standard foot- print with 70 µm copper thickness. Symbol Parameter Min. Max. Units Test Conditions Vds Maximum drain to source voltage — 47 Vin Maximum Input voltage -0.3 7 Iin, max Maximum IN current -10 +10 mA Isd cont. Diode max. continuous current (1) rth=62oC/W IPS0151 — 2.8 TO220 free air rth=5oC/W IPS015135 — 35 rth=80oC/W IPS0151S — 2.2 SMD220 Std footprint Isd pulsed Diode max. pulsed current (1) —4 5 Pd Maximum power dissipation (1) (rth=62oC/W) IPS0151 — 2 (rth=80oC/W) IPS0151S — 1.56 ESD1 Electrostatic discharge voltage (Human Body) — 4 C=100pF , R=1500 Ω, ESD2 Electrostatic discharge voltage (Machine Model) — 0.5 C=200pF , R=0 Ω, L=10µH T stor. Max. storage temperature -55 150 Tj max. Max. junction temperature -40 +150 Tlead Lead temperature (soldering, 10 seconds) — 300 V W A TO220 with Rth=5oC/W kV oC

IPS0151(S) www.irf.com 3 Symbol Parameter Min. Typ. Max. Units Test Conditions Tsd Over temperature threshold — 165 — oC See fig. 1 Isd Over current threshold 20 35 50 A See fig. 1 Vreset IN protection reset threshold 1.5 2.3 3 V Treset Time to reset protection 2 10 40 µs Vin = 0V, Tj = 25oC EOI_OT Short circuit energy (see application note) — 400 — µJ Vcc = 14V Protection Characteristics Symbol Parameter Min. Typ. M ax. Units Test Conditions R ds(on) ON state resistance Tj = 25oC1 0 2 0 2 5 Tj = 150oC— 3 5 45 Idss1 Drain to source leakage current 0 0.5 25 V cc = 14V, Tj = 25oC @Tj=25 oC Idss2 Drain to source leakage current 0 5 50 V cc = 40V, Tj = 25oC @Tj=25 oC V clamp 1 Drain to source clamp voltage 1 47 52 56 Id = 20mA (see Fig.3 & 4) V clamp 2 Drain to source clamp voltage 2 50 55 60 Vin clamp IN to source clamp voltage 7 8.1 9.5 Iin = 1 mA Vin th IN threshold voltage 1 1.6 2 Id = 50mA, Vds = 14V Iin, -on ON state IN positive current 25 90 200 V in = 5V Iin, -off OFF state IN positive current 50 130 250 V in = 5V over-current triggered Static Electrical Characteristics (Tj = 25oC unless otherwise specified.) m Ω Vin = 5V, Ids = 1A Id=Ishutdown (see Fig.3 & 4) V µA Switching Electrical Characteristics Vcc = 14V, Resistive Load = 3Ω , Rinput = 50Ω, 100us pulse, Tj = 25oC, (unless otherwise specified). /G20Symbol Parameter Min. Typ. Max. Units Test Conditions Ton Turn-on delay time 0.05 0.25 0.6 Tr Rise time 0.2 0.9 1.5 Trf Time to (final Rds(on) 1.3%) — 3.8 — Toff Turn-off delay time 0.8 1.5 2 Tf Fall time 0.4 1.1 2 Q in Total gate charge — 30 — nC V in = 5V See figure 2 See figure 2 µs µA

IPS0151(S) 4 www.irf.com Lead Assignments Part Number 1 2 3 In D S TO-220 IPS0151 2 (D) D2PAK (SMD220) IPS0151S 1 3 In D S 2 (D) Functional Block Diagram All values are typical IN DRAIN SOURC E 8.1 V 80 µ A 47 V I sense 200 k Ω 200 Ω S Q R Q T > 165°c I > Isd

IPS0151(S) 8 www.irf.com Figure 16 - Transient Thermal Imped. (oC/W) Vs Time (s) - IPS0151/IPS051S 0.01 0.1 100 /G31/G45/G2D/G30/G35 /G31/G45/G2D/G30/G34 /G31/G45/G2D/G30/G33 /G31/G45/G2D/G30/G32 /G31/G45/G2D/G30/G31 /G31/G45/G2B/G30/G30 /G31/G45/G2B/G30/G31 /G31/G45/G2B/G30/G32 /G31/G45/G2B/G30/G33 rth free air TO220, std footprint SMD220 rth junction to case = 1.8°C/W Single pulse Figure 13 - Max.Cont. Ids (A) Vs Ambient Temperature (oC) Figure 15 - Iclamp (A) Vs Inductive Load (mH) 0.1 100 0.001 0.01 0.1 1 10 100 single pulse

100 Hz rth=60°C/W dT=25°C

1kHz rth=60°C/W dT=25°C Vbat = 14 V Tjini = T sd Figure 14 - Max.Cont. Ids (A) Vs Ambient Temperature (oC) 100 T=25°C T=100°C Current path capability should be above this Load characteristic should be below this curve -50 0 50 100 150 200 rth = 5°C/W rth = 15°C/W SMD220 1'' footprint SMD220 std. footprint

IPS0151(S) 10 www.irf.com 01-6024 00 IRGB 01-3026 01 (TO-220AB) Case Outline NOTES: 3-Lead TO-220AB

IPS0151(S) www.irf.com 11 01-6022 00 115-0088 10 (TO-263AB)3-Lead D2PAK Case Outline

IPS0151(S) 12 www.irf.com Tape & Reel - D2PAK (SMD220) IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105 Data and specifications subject to change without notice. 11/13/2001 01-3072 00