IPQC60R010S7 INFINEON | Alldatasheet

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Technical content

Features

  • CoolMOS™S7technologyenables10mΩ RDS(on)inthesmallestfootprint
  • Optimizedpriceperformanceinlowfrequencyswitchingapplications
  • Highpulsecurrentcapability
  • KelvinSourcepinimprovesswitchingperformanceathighcurrent
  • QDPAKbottomsidecoolingpackageisMSL1compliant,totalPb-free andsuitableforstandardPCBassemblingflow,enablingsimplesystem integration Benefits
  • Minimizedconductionlosses(eliminate/reduceheatsink)
  • Increasedsystemperformance
  • Morecompactandeasierdesign
  • LowerBOMor/andTCOoverprolongedlifetime Comparedtoelectromechanicaldevices:
  • Fasterswitchingtimes
  • Higherreliabilityandlongersystemlifetime
  • Shock&vibrationresistance
  • Nocontactarcing,bouncingordegradationoverlifetime Potentialapplications
  • Solidstaterelaysandcircuitbreakers
  • Linerectificationinhighpower/performanceapplicationse.g.Computing, Telecom,UPSandSolar Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Pleasenote:Thesourceandsensesourcepinsarenotexchangeable. Theirexchangemightleadtomalfunction.Forparalleling4pinMOSFET devicestheplacementofthegateresistorisgenerallyrecommendedtobe ontheDriverSourceinsteadoftheGate. Table1KeyPerformanceParameters Parameter Value Unit RDS(on),max 10 mΩ Qg,typ 318 nC VSD 0.82 V Pulsed ISD, IDS 801 A Type/OrderingCode Package Marking RelatedLinks IPQC60R010S7 PG-HDSOP-22 60R010S7 see Appendix A

600VCoolMOSªSJS7PowerDevice IPQC60R010S7 Rev.2.0,2022-11-23Final Data Sheet TableofContents

600VCoolMOSªSJS7PowerDevice IPQC60R010S7 Rev.2.0,2022-11-23Final Data Sheet 1Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Drain current rating ID - - 50 A TC=140°C Current is limited by Tj max = 150°C; Lower case temp does increase current capability Pulsed drain current1) ID,pulse - - 801 A TC=25°C Avalanche energy, single pulse EAS - - 616 mJ ID=6.3A; VDD=50V; see table 10 Avalanche current, single pulse IAS - - 6.3 A - MOSFET dv/dt ruggedness2) dv/dt - - 20 V/ns VDS=0Vto300V Gate source voltage (static) VGS -20 - 20 V static Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz) Power dissipation Ptot - - 694 W TC=25°C Storage temperature Tstg -55 - 150 °C - Operating junction temperature Tj -55 - 150 °C - Mounting torque - - - n.a. Ncm - Diode forward current rating IS - - 50 A TC=140°C Current is limited by Tj max = 150°C; Lower case temp does increase current capability Diode pulse current1) IS,pulse - - 801 A TC=25°C Reverse diode dv/dt3) dv/dt - - 5 V/ns VDS=0to300V,ISD<=50A,Tj=25°C see table 8 Maximum diode commutation speed dif/dt - - 1000 A/µs VDS=0to300V,ISD<=50A,Tj=25°C see table 8 Insulation withstand voltage VISO - - n.a. V Vrms,TC=25°C,t=1min 1) Pulse width tp limited by Tj,max 2) The dv/dt has to be limited by appropriate gate resistor 3) Identical low side and high side switch

600VCoolMOSªSJS7PowerDevice IPQC60R010S7 Rev.2.0,2022-11-23Final Data Sheet 2Thermalcharacteristics Table3Thermalcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Thermal resistance, junction - case RthJC - - 0.18 °C/W - Thermal resistance, junction - ambient RthJA - - 62 °C/W device on PCB, minimal footprint Thermal resistance, junction - ambient for SMD version RthJA - 45 55 °C/W Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70µm thickness) copper area. Tap exposed to air. PCB is vertical without air stream cooling. Soldering temperature, reflow soldering allowed Tsold - - 260 °C reflow MSL1

600VCoolMOSªSJS7PowerDevice IPQC60R010S7 Rev.2.0,2022-11-23Final Data Sheet 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics For applications with applied blocking voltage >70% of the specified blocking voltage, it is required that the customer evaluates the impact of cosmic radiation effect in early design phase and contacts the Infineon sales office for the necessary technical support by Infineon Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Drain-source breakdown voltage V(BR)DSS 600 - - V VGS=0V,ID=1mA Gate threshold voltage V(GS)th 3.5 4.0 4.5 V VDS=VGS,ID=3.08mA Zero gate voltage drain current IDSS - µA VDS=600V,VGS=0V,Tj=25°C VDS=600V,VGS=0V,Tj=150°C Gate-source leakage current IGSS - - 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) 0.009 0.022 0.010 - Ω VGS=12V,ID=50A,Tj=25°C VGS=12V,ID=50A,Tj=150°C Gate resistance RG - 0.45 - Ω f=1MHz,opendrain Table5Dynamiccharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Input capacitance Ciss - 11986 - pF VGS=0V,VDS=300V,f=250kHz Output capacitance Coss - 187 - pF VGS=0V,VDS=300V,f=250kHz Effective output capacitance, energy related1) Co(er) - 644 - pF VGS=0V,VDS=0to300V Effective output capacitance, time related2) Co(tr) - 5716 - pF ID=constant,VGS=0V,VDS=0to300V Output charge Qoss - 1714 - nC VGS=0V,VDS=0to300V Turn-on delay time td(on) - 50 - ns VDD=300V,VGS=13V,ID=50A, RG=3Ω ;seetable9 Rise time tr - 5 - ns VDD=300V,VGS=13V,ID=50A, RG=3Ω ;seetable9 Turn-off delay time td(off) - 180 - ns VDD=300V,VGS=13V,ID=50A, RG=3Ω ;seetable9 Fall time tf - 9 - ns VDD=300V,VGS=13V,ID=50A, RG=3Ω ;seetable9 Table6Gatechargecharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Gate to source charge Qgs - 65 - nC VDD=300V,ID=50A,VGS=0to12V Gate to drain charge Qgd - 106 - nC VDD=300V,ID=50A,VGS=0to12V Gate charge total Qg - 318 - nC VDD=300V,ID=50A,VGS=0to12V Gate plateau voltage Vplateau - 5.4 - V VDD=300V,ID=50A,VGS=0to12V 1)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to300V 2)Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to300V

600VCoolMOSªSJS7PowerDevice IPQC60R010S7 Rev.2.0,2022-11-23Final Data Sheet Table7Reversediodecharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Diode forward voltage VSD - 0.82 - V VGS=0V,IF=50A,Tj=25°C Reverse recovery time trr - 600 - ns VR=300V,IF=50A,diF/dt=100A/µs; see table 8 Reverse recovery charge Qrr - 17 - µC VR=300V,IF=50A,diF/dt=100A/µs; see table 8 Peak reverse recovery current Irrm - 55 - A VR=300V,IF=50A,diF/dt=100A/µs; see table 8

600VCoolMOSªSJS7PowerDevice IPQC60R010S7 Rev.2.0,2022-11-23Final Data Sheet 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation TC[°C] Ptot[W] 100 125 150 100 200 300 400 500 600 700 Ptot=f(TC) Diagram2:Safeoperatingarea VDS[V] ID[A] 100 101 102 103 10-3 10-2 10-1 100 101 102 103 1 µs 10 µs 100 µs 1 ms 10 ms DC ID=f(VDS);TC=25°C;D=0;parameter:tp Diagram3:Safeoperatingarea VDS[V] ID[A] 100 101 102 103 10-3 10-2 10-1 100 101 102 103 1 µs 10 µs 100 µs 1 ms 10 ms DC ID=f(VDS);TC=80°C;D=0;parameter:tp Diagram4:Max.transientthermalimpedance tp[s] ZthJC[K/W] 10-5 10-4 10-3 10-2 10-1 100 10-3 10-2 10-1 100 0.5 0.2 0.1 0.05 0.02 0.01 single pulse ZthJC=f(tP);parameter:D=tp/T

600VCoolMOSªSJS7PowerDevice IPQC60R010S7 Rev.2.0,2022-11-23Final Data Sheet Diagram5:Typ.outputcharacteristics VDS[V] ID[A] 200 400 600 800 1000 1200 20 V 12 V 10 V 8 V ID=f(VDS);Tj=25°C;parameter:VGS Diagram6:Typ.outputcharacteristics VDS[V] ID[A] 200 400 600 800 20 V 12 V 10 V 8 V ID=f(VDS);Tj=125°C;parameter:VGS Diagram7:Typ.drain-sourceon-stateresistance ID[A] RDS(on)[Ω ] 100 200 300 400 500 600 700 0.018 0.021 0.024 0.027 0.030 12 V 10 V 20 V 8 V RDS(on)=f(ID);Tj=125°C;parameter:VGS Diagram8:Drain-sourceon-stateresistance Tj[°C] RDS(on)[normalized] -50 -25 100 125 150 0.5 1.0 1.5 2.0 2.5 RDS(on)=f(Tj);ID=50A;VGS=12V

600VCoolMOSªSJS7PowerDevice IPQC60R010S7 Rev.2.0,2022-11-23Final Data Sheet Diagram9:Typ.transfercharacteristics VGS[V] ID[A] 200 400 600 800 1000 1200 150 °C 25 °C ID=f(VGS);VDS=20V;parameter:Tj Diagram10:Typ.gatecharge Qgate[nC] VGS[V] 100 150 200 250 300 350 120 V 300 V VGS=f(Qgate);ID=50Apulsed;parameter:VDD Diagram11:Forwardcharacteristicsofreversediode VSD[V] IF[A] 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 10-1 100 101 102 103 125 °C 25 °C IF=f(VSD);VGS=0V;parameter:Tj Diagram12:Forwardcharacteristicsofreversediode VSD[V] IF[A] 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 10-1 100 101 102 103 25 °C 125 °C IF=f(VSD);VGS=12V;parameter:Tj

600VCoolMOSªSJS7PowerDevice IPQC60R010S7 Rev.2.0,2022-11-23Final Data Sheet Diagram13:Avalancheenergy Tj[°C] EAS[mJ] 100 125 150 100 200 300 400 500 600 700 EAS=f(Tj);ID=6.3A;VDD=50V Diagram14:Drain-sourcebreakdownvoltage Tj[°C] VBR(DSS)[V] -50 -25 100 125 150 540 560 580 600 620 640 660 680 VBR(DSS)=f(Tj);ID=1mA Diagram15:Typ.capacitances VDS[V] C[pF] 100 150 200 250 300 101 102 103 104 105 106 Ciss Coss Crss C=f(VDS);VGS=0V;f=250kHz Diagram17:Typ.Qossoutputcharge VDS[V] Qoss[nC] 100 150 200 250 300 300 600 900 1200 1500 1800 Qoss=f(VDS);VGS=0V

600VCoolMOSªSJS7PowerDevice IPQC60R010S7 Rev.2.0,2022-11-23Final Data Sheet 5TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform VDS IF R g1 R g 2 R g1 = R g 2 Table9Switchingtimes(ss) Switching times test circuit for inductive load Switching times waveform VDS VGS td(on) td(off)tr ton tf toff 10% 90% VDS VGS Table10Unclampedinductiveload(ss) Unclamped inductive load test circuit Unclamped inductive waveform VDS V(BR)DS ID VDS VDSID

600VCoolMOSªSJS7PowerDevice IPQC60R010S7 Rev.2.0,2022-11-23Final Data Sheet 6PackageOutlines DIMENSIONSMIN.MAX.MILLIMETERSPG-HDSOP-22-U02PACKAGE - GROUPNUMBER: bDcEeD1 AA1 1.1415.300.460.50 2.200.002.350.15 b10.500.90 O 5° A20.5 Figure1OutlinePG-HDSOP-22,dimensionsinmm

600VCoolMOSªSJS7PowerDevice IPQC60R010S7 Rev.2.0,2022-11-23Final Data Sheet 7AppendixA Table11RelatedLinks

  • IFXCoolMOSS7Webpage:www.infineon.com
  • IFXCoolMOSS7applicationnote:www.infineon.com
  • IFXCoolMOSS7simulationmodel:www.infineon.com
  • IFXDesigntools:www.infineon.com

600VCoolMOSªSJS7PowerDevice IPQC60R010S7 Rev.2.0,2022-11-23Final Data Sheet RevisionHistory IPQC60R010S7 Revision:2022-11-23,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2022-11-23 Release of final version Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2022InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseofthe productofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.