IPP80N06S2-09 ISC | Alldatasheet

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Technical content

iscwebsite：www.iscsemi.cn isc&iscsemiisregisteredtrademark 2023-04-24 iscN-ChannelMOSFETTransistor IPP80N06S2-09

  • FEATURES
  • DrainCurrent –ID=100A@TC=25℃
  • DrainSource Voltage- :VDSS=55V(Min)
  • StaticDrain-Source On-Resistance :RDS(on) :9.1mΩ(Max)
  • 100% avalanchetested
  • MinimumLot-to-Lotvariations forrobustdevice performanceandreliable operation
  • DESCRITION
  • UltraLowOn-resistance
  • FastSwitching Type Marking IPP80N06S2-09 2N0609
  • ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-SourceVoltage 55 V VGS Gate-SourceVoltage ±20 V ID DrainCurrent-Continuous 100 A IDM DrainCurrent-SinglePulsed 280 A EAS AvalancheenergyL=0.2mH 380 mJ PD TotalDissipation@TC=25℃ 190 W Tj Max.OperatingJunctionTemperature 175 ℃ Tstg StorageTemperature -55~175 ℃
  • THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(j-c) Channel-to-casethermalresistance 0.8 ℃/W

iscwebsite：www.iscsemi.cn isc&iscsemiisregisteredtrademark 2023-04-24 iscN-ChannelMOSFETTransistor IPP80N06S2-09 ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN YTP MAX UNIT BVDSS Drain-SourceBreakdownVoltage VGS=0V;ID=250μA 55 - - V VGS(th) GateThresholdVoltage VDS=VGS;ID=125μA 2.1 - 4.0 V RDS(on) Drain-SourceOn-Resistance VGS=10V;ID=50A - - 9.1 mΩ IGSS Gate-SourceLeakageCurrent VGS= ±20V - - ±100 nA IDSS Drain-SourceLeakageCurrent VDS=55V;VGS=0V - - 1 μA Dynamic Ciss InputCapacitance VGS =0V, VDS =20V, f=1.0MHz - 7500 - pFCoss OutputCapacitance - 660 - Crss ReverseTransferCapacitance - 385 - RG Gateresistance - 0.82 - Ω Qg TotalGateCharge VDS =30V, ID =15A, VGS =10V - 102 - nCQgs Gate-SourceCharge - 48 - Qgd Gate-DrainCharge - 26.2 - td(on) Turn-onDelayTime VGS =10V, VDS =30V, ID =15A, RG =2Ω - 53.2 - ns tr Turn-onRiseTime - 112 - td(off) Turn-offDelayTime - 38 - tf Turn-offFallTime - 34 - Drain-SourceBodyDiodeCharacteristics ISM Pulsed SourceCurrent Tc =25ºC - - 100 A VSD DiodeForwardVoltage Tc =25ºC,ISD=100A;VGS=0V - 0.65 1.0 V trr ReverseRecoveryTime IF =40A, diF/dt=100A/μs - 60 - ns Qrr ReverseRecoveryCharge - 114 - uC

iscwebsite：www.iscsemi.cn isc&iscsemiisregisteredtrademark 2023-04-24 iscN-ChannelMOSFETTransistor IPP80N06S2-09 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field. Please contact us if you intend our products to be used in these special applications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.