IPP65R110CFD ISC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
iscwebsite：www.iscsemi.cn isc&iscsemiisregisteredtrademark1 iscN-ChannelMOSFETTransistor IPP65R110CFD，IIPP65R110CFD
- FEATURES
- Staticdrain-source on-resistance: RDS(on)≤0.11Ω
- Enhancementmode
- FastSwitching Speed
- 100% avalanchetested
- MinimumLot-to-Lotvariations forrobustdevice performanceandreliable operation
- DESCRIPTION
- Provideallbenefits of afastswitchingSJ MOSFETwhileoffering anextremely fastand robustbody diode
- ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-SourceVoltage 650 V VGS Gate-SourceVoltage ±20 V ID DrainCurrent-Continuous 31.2 A IDM DrainCurrent-SinglePulsed 99.6 A PD TotalDissipation@TC=25℃ 277.8 W Tj Max.OperatingJunctionTemperature 150 ℃ Tstg StorageTemperature -55~150 ℃
- THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-casethermalresistance 0.45 ℃/W Rth(ch-a) Channel-to-ambientthermalresistance 62 ℃/W
iscwebsite：www.iscsemi.cn isc&iscsemiisregisteredtrademark2 iscN-ChannelMOSFETTransistor IPP65R110CFD，IIPP65R110CFD ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-SourceBreakdownVoltage VGS=0V;ID =1mA 650 V VGS(th) GateThresholdVoltage VDS=VGS;ID =1.3mA 3.5 4.5 V RDS(on) Drain-SourceOn-Resistance VGS=10V;ID=12.7A 0.11 Ω IGSS Gate-SourceLeakageCurrent VGS=20V;VDS=0V 0.1 μA IDSS Drain-SourceLeakageCurrent VDS=650V;VGS=0V 1.5 μA VSD Diodeforwardvoltage IF=19.1A;VGS =0V 0.9 V