IPP65R075CFD7A ISC | Alldatasheet
Document overview
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Technical content
www.iscsemi.com 1
FEATURES
- DrainCurrent-ID=32A@TC=25℃
- DrainSource Voltage-VDSS=650V(Min)
- Static Drain-Source On-Resistance -RDS(on) =75mΩ(Max)@VGS=10V
APPLICATIONS
- Unidirectional
- BidirectionalDC-DCconverters
- On-Board batteryChargers AbsoluteMaximumRatings(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-SourceVoltage 650 V VGS Gate-SourceVoltage ±20 V ID DrainCurrent-Continuous 32 A IDM DrainCurrent-SinglePulsed 139 A PD TotalDissipation@TC=25℃ 171 W Tj Max.OperatingJunction Temperature 150 ℃ Tstg StorageTemperature -40~150 ℃ THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(J-c) ThermalResistanceJunction-to-Case 0.73 ℃/W TO-220CPackage
www.iscsemi.com 2 ELECTRICALCHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-SourceBreakdownVoltage VGS=0V;ID =1mA 650 - - V VGS(th) GateThresholdVoltage VDS=VGS;ID =0.82mA 3.5 - 4.5 V RDS(on) Drain-SourceOn-Resistance VGS=10V;ID=16.4A - - 75 mΩ IGSS Gate-SourceLeakageCurrent VGS=±20V;VDS=0V - - ±100 nA IDSS Drain-SourceLeakageCurrent VDS=650V;VGS=0V - - 1 μA VSD Diodeforwardvoltage ISD=16.4A;VGS =0V - 1.1 - V PRODUCTDISCLAIMER ISCreserves the rights tomakechangesof thecontent hereinthe datasheetatany timewithout notification.The informationcontained hereinis presentedonly as aguidefortheapplications ofour products. ISCproducts are intendedforusagein generalelectronic equipment.Theproducts are notdesigned for usein equipmentwhichrequire specialized qualityand/or reliability,orin equipment whichcould have applications inhazardous environments,aerospaceindustry,or medicalfield.Pleasecontactusif you intend ourproducts tobe used inthese specialapplications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifically disclaimsany and allliability,includingwithout limitation special,consequential orincidental damages. Itis strictlyprohibitedto reprintorcopy partorallof thisdatasheetwithoutpermission fromISC.