IPP60R360P7 ISC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
iscwebsite：www.iscsemi.cn isc&iscsemiisregisteredtrademark1 iscN-ChannelMOSFETTransistor IPP60R360P7，IIPP60R360P7
- FEATURES
- Staticdrain-source on-resistance: RDS(on)≤0.36Ω
- Enhancementmode
- FastSwitching Speed
- 100% avalanchetested
- MinimumLot-to-Lotvariations forrobustdevice performanceandreliable operation
- DESCRIPTION
- Combinesthe benefits ofafastswitching SJMOSFETwith excellent easeofuse
- ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-SourceVoltage 600 V VGS Gate-SourceVoltage ±20 V ID DrainCurrent-Continuous 9 A IDM DrainCurrent-SinglePulsed 26 A PD TotalDissipation@TC=25℃ 41 W Tj Max.OperatingJunctionTemperature 150 ℃ Tstg StorageTemperature -55~150 ℃
- THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-casethermalresistance 3.04 ℃/W Rth(ch-a) Channel-to-ambientthermalresistance 62 ℃/W
iscwebsite：www.iscsemi.cn isc&iscsemiisregisteredtrademark2 iscN-ChannelMOSFETTransistor IPP60R360P7，IIPP60R360P7 ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-SourceBreakdownVoltage VGS=0V;ID =1mA 600 V VGS(th) GateThresholdVoltage VDS=VGS;ID =0.14mA 3 4 V RDS(on) Drain-SourceOn-Resistance VGS=10V;ID=2.7A 0.36 Ω IGSS Gate-SourceLeakageCurrent VGS=20V;VDS=0V 1 μA IDSS Drain-SourceLeakageCurrent VDS=600V;VGS=0V 1 μA VSD Diodeforwardvoltage IF=2.7A;VGS =0V 0.9 V