IPP60R280CFD7 ISC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
iscwebsite：www.iscsemi.cn isc&iscsemiisregisteredtrademark1 iscN-ChannelMOSFETTransistor IPP60R280CFD7,IIPP60R280CFD7
- FEATURES
- Staticdrain-source on-resistance: RDS(on)≤0.28Ω
- Enhancementmode
- FastSwitching Speed
- 100% avalanchetested
- MinimumLot-to-Lotvariations forrobustdevice performanceandreliable operation
- DESCRIPTION
- This newproductseries blendsalladvantages ofafastswitching technologytogether withsuperior hardcommutation robustness, withoutsacrificing easy implementation inthe design-inprocess
- ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-SourceVoltage 600 V VGS Gate-SourceVoltage ±20 V ID DrainCurrent-Continuous 9 A IDM DrainCurrent-SinglePulsed 31 A PD TotalDissipation@TC=25℃ 52 W Tj Max.OperatingJunctionTemperature 150 ℃ Tstg StorageTemperature -55~150 ℃
- THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-casethermalresistance 2.39 ℃/W Rth(ch-a) Channel-to-ambientthermalresistance 62 ℃/W
iscwebsite：www.iscsemi.cn isc&iscsemiisregisteredtrademark2 iscN-ChannelMOSFETTransistor IPP60R280CFD7,IIPP60R280CFD7 ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-SourceBreakdownVoltage VGS=0V;ID =1mA 600 V VGS(th) GateThresholdVoltage VDS=VGS;ID =0.18mA 3.5 4.5 V RDS(on) Drain-SourceOn-Resistance VGS=10V;ID=3.6A 0.28 Ω IGSS Gate-SourceLeakageCurrent VGS=20V;VDS=0V 0.1 μA IDSS Drain-SourceLeakageCurrent VDS=600V;VGS=0V 1 μA VSD Diodeforwardvoltage IF=3.6A;VGS =0V 1 V