IPP50R399CP ISC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
iscwebsite：www.iscsemi.cn isc&iscsemiisregisteredtrademark1 iscN-ChannelMOSFETTransistor IPP50R399CP，IIPP50R399CP
- FEATURES
- Staticdrain-source on-resistance: RDS(on)≤0.399Ω
- Enhancementmode
- FastSwitching Speed
- 100% avalanchetested
- MinimumLot-to-Lotvariations forrobustdevice performanceandreliable operation
- DESCRITION
- Ultralow gatecharge
- Highpeak current capability
- ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-SourceVoltage 500 V VGS Gate-SourceVoltage ±20 V ID DrainCurrent-Continuous 9 A IDM DrainCurrent-SinglePulsed 20 A PD TotalDissipation@TC=25℃ 83 W Tj Max.OperatingJunctionTemperature 150 ℃ Tstg StorageTemperature -55~150 ℃
- THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-casethermalresistance 1.5 ℃/W Rth(ch-a) Channel-to-ambientthermalresistance 62 ℃/W
iscwebsite：www.iscsemi.cn isc&iscsemiisregisteredtrademark2 iscN-ChannelMOSFETTransistor IPP50R399CP，IIPP50R399CP ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-SourceBreakdownVoltage VGS=0V;ID =1mA 500 V VGS(th) GateThresholdVoltage VDS=VGS;ID =0.33mA 2.5 3.5 V RDS(on) Drain-SourceOn-Resistance VGS=10V;ID=4.9A 0.399 Ω IGSS Gate-SourceLeakageCurrent VGS=20V;VDS=0V 0.1 μA IDSS Drain-SourceLeakageCurrent VDS=500V;VGS=0V 1 μA VSD Diodeforwardvoltage IF=4.9A;VGS =0V 1.2 V