IPP410N30N ISC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
iscwebsite：www.iscsemi.cn isc&iscsemiisregisteredtrademark1 iscN-ChannelMOSFETTransistor IPP410N30N，IIPP410N30N
- FEATURES
- Staticdrain-source on-resistance: RDS(on)≤41mΩ
- Enhancementmode
- FastSwitching Speed
- 100% avalanchetested
- MinimumLot-to-Lotvariations forrobustdevice performanceandreliable operation
- DESCRITION
- Optimizedforhardcommutation ruggedness
- ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-SourceVoltage 300 V VGS Gate-SourceVoltage ±20 V ID DrainCurrent-Continuous 44 A IDM DrainCurrent-SinglePulsed 176 A PD TotalDissipation@TC=25℃ 300 W Tj Max.OperatingJunctionTemperature 175 ℃ Tstg StorageTemperature -55~175 ℃
- THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-casethermalresistance 0.5 ℃/W Rth(ch-a) Channel-to-ambientthermalresistance 62 ℃/W
iscwebsite：www.iscsemi.cn isc&iscsemiisregisteredtrademark2 iscN-ChannelMOSFETTransistor IPP410N30N，IIPP410N30N ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-SourceBreakdownVoltage VGS=0V;ID =1mA 300 V VGS(th) GateThresholdVoltage VDS=VGS;ID =270μA 2 4 V RDS(on) Drain-SourceOn-Resistance VGS=10V;ID=44A 41 mΩ IGSS Gate-SourceLeakageCurrent VGS=20V;VDS=0V 0.1 μA IDSS Drain-SourceLeakageCurrent VDS=240V;VGS=0V 10 μA VSD Diodeforwardvoltage IF=44A;VGS =0V 1.2 V