IPP200N25N3 ISC | Alldatasheet
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Technical content
www.iscsemi.com 1
FEATURES
- DrainCurrent-ID=64A@TC=25℃
- DrainSource Voltage-VDSS=250V(Min)
- Static Drain-Source On-Resistance -RDS(on) =20mΩ(Max)@VGS=10V
APPLICATIONS
- Idealforhigh-frequencyswitchingand synchronousrectification AbsoluteMaximumRatings(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-SourceVoltage 250 V VGS Gate-SourceVoltage ±20 V ID DrainCurrent-Continuous 64 A IDM DrainCurrent-SinglePulsed 256 A PD TotalDissipation@TC=25℃ 300 W Tj Max.OperatingJunctionTemperature 175 ℃ Tstg StorageTemperature -55~175 ℃ THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-casethermalresistance 0.5 ℃/W Rth(ch-a) Channel-to-ambientthermalresistance 62 ℃/W
www.iscsemi.com 2 ELECTRICALCHARACTERISTICS (TJ=25℃) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-SourceBreakdownVoltage VGS=0V;ID =1mA 250 -- -- V VGS(th) GateThresholdVoltage VDS=VGS;ID =270μA 2 -- 4 V RDS(on) Drain-SourceOn-Resistance VGS=10V;ID=64A -- -- 20 mΩ IGSS Gate-SourceLeakageCurrent VGS=20V;VDS=0V -- -- 0.1 μA IDSS Drain-SourceLeakageCurrent VDS=200V;VGS=0V -- -- 1 μA VSD Diodeforwardvoltage IF=64A;VGS =0V -- -- 1.2 V PRODUCTDISCLAIMER ISCreserves the rights tomakechangesof thecontent hereinthe datasheetatany timewithout notification.The informationcontained hereinis presentedonly as aguidefortheapplications ofour products. ISCproducts are intendedforusagein generalelectronic equipment.Theproducts are notdesigned for usein equipmentwhichrequire specialized qualityand/or reliability,orin equipment whichcould have applications inhazardous environments,aerospaceindustry,or medicalfield.Pleasecontactusif you intend ourproducts tobe used inthese specialapplications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifically disclaimsany and allliability,includingwithout limitation special,consequential orincidental damages. Itis strictlyprohibitedto reprintorcopy partorallof thisdatasheetwithoutpermission fromISC.